蒋玉龙半导体物理视频配套课件lesson

1、1/323.1 半导体中电子的运动有效质量2/322dE1dE)k( E 0 )k L2E(k2dk2 dkk 0k 021dE)k ( E 0 ) k2E(22 dkk 03/3221dE)k ( E 0 ) k 2EE(dk 22k 04/3221m * 1dEn h 2 dk 2k 0 h2 k 2( k )0 E 2m*n1 d 2 EdEE (k ) E (0) dk k 2 kL2dk 2k 0k 0h2k 2E (k ) E0*n2m5/321 1 d 2 Em * n h 2 dk 2k 0 h22k( k )0 E *2mnE h6/32Ev 1 dEgh dkv hk gm

2、* nv dgdkFdsEEFvdtgdE dE dkrqFdk 1 dEvgh dkE7/32dvg F d 2adth2 dk 2F h dkdtE121dm *En h 2dk 28/32dvg F d 2adth2 dk 2a F m*nk h m*vng1 dEE121dvg m *h dkn2dk 2h9/323.2 本征半导体的导电机构空穴10/32 1 dEk )E( E()kvgk) h dkv (v(k )ggEkvk2v (gk) 0 满价带 空导带F12/32v (gk) 0dk qE dthq r E hdk dtF13/32dk qE dthq r E hdk dt

3、14/32J (q)vg (k )ggCAqEdkdthqE qEF0am*m*m*nnp15/3216/32 价带 导带 3.3 回旋和等能面17/3218/32k0这个极值附近rrrrEv1 2Ev)k (E 0 ) k rk () (k 0k )2E(0kr22 kkr vk r vkk k0019/32E2m()20/32k2k2k2x yz 1* E )Em2* (E Em)* 2E ( Exc yczc h2h2h2 1 2E 1 1 2E 1 1 2E 1m* , m* , m* h kh2 kzh kx22y222xryrzrk0k0k0rrh 2 (kk)2(kk)2(kk)

4、2 (k ) E(k) x0 x y0 y z0 z02 m *m *m *xyzmmkzRkRE0kykx21/322k 2 212m * Er )k E2xyz2(ch* m* m*xyz高频电场波 磁 电FB磁场BsiBn qvfgfvqvfBBg 2vg ravg r*v2mg rv *am *fmg 22/32rrq rvrg*v2vgm g rv am *r*fmg fB m *BcEqBBc 23/32 qBm *qv g kz, kBvBkky, jvkrBFqxii y ffvBfzjkrkix， (v) v ( Bv Bv( jB )Bv vByzzxxyv exp( dv

5、 xdvx,v0imivvm*m*fqB ()vxxxxxyzdtdtv exp( dv ydvyvqBv,qB0*,y,z,xv0it)imvvm*m*fqB ()vyyyyyyzxdtdtmvqBdv zdvzvqB0v exp( i*,z,x,yi,vv0t)vm*m*fqB ()vzzzzzzxydtdt24/32vt) * , qB, v, qB0 xxyzvr ivj xyzB i Bj mqB*xiqBqB0m i*qBmyqB qB*iz25/321m*2m*2 *m 2xyzm *m*m *m*xyzqBcm *3.4 硅和锗的能带结构26/32kz, k*2m*2*2mm1

6、k , jxyzy*x*ym*mmmzkx，i27/32kzs 1,2s 5,6 m* m* m*s 3,4 m* m* m*m*m*m*m*52ylxztxlyzt43 m* m* m*m*m*kyzlxyt16kxkz, kky, jkx，i28/32qBcm *1m * 2 m * 2 m * 2xyzm *m * m * m *xyzkz5243ky16kxs 1L61 3s 1L4s 5,61 , 02 1, 0s 1,2s 3L629/32 1 1m *m * m *ltm* m*t* 1 m xm *m * m * m *xyz11m *m * m *lt1 ml mt *m *

7、2m *m *2lt1 m x m y*m *2 m * m * m *xyz1 m l2 m t*m *3 m * m * 2lt1 m x m y m z *m *3m *m * m *xyz3.4.2 硅的能带结构B k C (kxky kykz kz kx rrh22E3(k) Ev hE1,2 (k ) Ev Ak 22422222222Ak2m2m00 0.53m , 0.16m , 0.25m; 0.04eVm*m*m*Si :hh0lh03h030/32Si :m* 0.98m ,m* 0.19ml0t0Ak2 C2(k2k2 k2k2 k k rrh2h2E3(k) Ev 2E(k ) E AkB2k4221,2vxyyzzx2m2m00 0.36m , 0.044m , 0.077m ; 0.29eVm*m*m*Ge:hh0lh03h031/32Ge :m* 1.64m ,m* 0.082ml0t0Eg (T 0K