HIPIMSHIPIMS大功率脉冲磁控溅射实用教案

1、1Overview Presentation Hipims+ by Hauzer Why High Power sputter technology Hipims vs. Hipims+ Coatings: TiAlN, Cr2N Machine integration in Flexicoat第1页/共31页第一页，共32页。2Plasma technology with high % of the material to be deposited is ionized. Gaining control over stress - Control microstructure/texture

2、To create defect free coatings with good adhesion.To make coatings for tool and tribo applications which outperform arc deposited coatingsTo reduce thermal load of substrateTo increase deposition rate of sputtering processWhy High power pulse sputtering?第2页/共31页第二页，共32页。3 Capacitor discharge Peak pu

3、lse powers from kW to MW Low frequency (duty cycle) Pulse energy and voltage can be defined Pulse shape is determined by system configuration Cabling Pressure Sputtering atmosphere Magnetron designConcept behind HIPIMS Technology第3页/共31页第三页，共32页。4HIPIMS Plasma composition in ArN2Sum of Ar+Ar+Ti+Ti+N

4、+N+=100%Ratio of N+ to N2+ is significantly higher in a HIPIMS discharge than in (pulsed) DC discharge.More reactive N species.第4页/共31页第四页，共32页。5HIPIMS TiAlN ExperimentExperiment overviewSample: polished M2 HSSTarget: 50/50 at% AlTiDep. Temp.: 450-520oCFilm thickness: 2-3mFull load in chamber, Three

5、 fold rotationSample #EtchingDeposition source configurationBias voltage1 SpuHIPIMS Ti2 DC + 1HIPIMS-75V2 SpuHIPIMS Ti2 DC + 1HIPIMS-95V3 SpuHIPIMS AlTi1 DC + 2 HIPIMS-75V1 ArcArc Ti2 x 4 CARC-40V2 ArcArc Ti2 x 4 CARC-70V第5页/共31页第五页，共32页。62D1H95HIPIMS -95V bias2D1H75HIPIMS -75V biasA70Arc -70V biasR

6、esults - RoughnessAFM 30 x30mSignificant improvement in surface roughness 第6页/共31页第六页，共32页。7Results - RoughnessRoughness data第7页/共31页第七页，共32页。8Ion energy 2D1H75VHIPIMS -75V2D1H95HIPIMS -95VResults - MorphologyAFM 2x2mIncrease in ion energy (higher bias) with constant ion flux leads to densification

7、of coatingColumns coalesce to reduce number of boundariesResputtering of film evident at growing surface第8页/共31页第八页，共32页。9Results Hardness and E modulusHardness increases with increasing bias or addition of HIPIMS Cathodes.No definite trend for E modulus possible differences due to changes in Micros

8、tructure.第9页/共31页第九页，共32页。10Results Scratch testAlTi etchedTi etchedCritical loads for HIPIMS etched samples close to those for arc etched Samples.No apparent difference In adhesion with respect to etching material.第10页/共31页第十页，共32页。11Conclusions HIPIMS TiAlNIt is possible to create AlTiN coatings b

9、y HIPIMS deposition with material properties similar to those deposited by cathodic arcsimilar hardness and E modulus.HIPIMS deposited coatings show some promising benefits as compared to arc deposited coatingslower roughnessHIPIMS etching produces comparable adhesion values as compared to metal ion

10、 etching from an arc source for both Ti and AlTi targets.HIPIMS technology is industrially feasible.第11页/共31页第十一页，共32页。12Modulated Pulse Power - MPP High power pulse magnetron sputtering technique Heart of technology is Multi-step DC pulse Voltage rise time control is key to enabling a long, stable,

11、 and high power pulse discharge Pulses widths of 200 sec up to 1.5 msec HIPIMS+ by Hauzer provides: Control of the gas to metal ion ratio Increased deposition rate (higher than HIPIMS) Improved target utilization Smooth, very good adhering hard coatings for tool and tribo applications.Hipims+ Techno

12、logy Integrated MPP Technology 第12页/共31页第十二页，共32页。13HIPIMS vs. HIPIMS+第13页/共31页第十三页，共32页。14Integrated MPP Technology - Modulated Pulse PowerMulti-step voltage pulse First step ignition of low power dischargeSecond step low power discharge Third step transient stage from low power discharge to high p

13、ower discharge Fourth step high power dischargeHIPIMS+ TechnologyVVLPVHP12340t0t1t2t3t4(1) VLP/(t1-t0) (3) (VHP-VLP)/(t3-t2)timet5第14页/共31页第十四页，共32页。15Hipims+ Pulse 第15页/共31页第十五页，共32页。16Hipims+ Pulsing possibilities Multilayer structure of CrN film, sputtered with different voltage pulse shapes (1)

14、and (2).Time T1 (5s, 10s, 15s) Rep. rate 160 HzTime T2 (5s, 10s, 15s) Rep. rate 50 HzVSiTime1500 s1500 s700 s700 s150 ms6005401122第16页/共31页第十六页，共32页。17 Provide an additional constant voltage power supply, which can supply the required peak current at the required constant voltage. (Arc handling) Sim

15、ple Solution: use capacitor as additional CV-power supply.Hauzer Patent: electronic switching for a fast interruption of the arc current, capable to handle the current of the capacitor discharge circuit.With capacitor80 AWithout capacitorHipims+ Bias issues第17页/共31页第十七页，共32页。18Hipims+Hipims+Flexicoa

16、t 1000Table dia = 650mmCoating zone height = 650mmFull loadCoating temperature = 520CTarget composition 50/50 at%Ti+ etching CARC cathodesAr+ etching plasma sourceHIPIMS+ TiAlN第18页/共31页第十八页，共32页。19Ti+ ion etching (arc) + DC sputterTi+ ion etching (arc) + ArcTi+ ion etching (arc) + HIPIMS+Ar+ etching

17、 + HIPIMS+HIPIMS+ TiAlN experiment overview第19页/共31页第十九页，共32页。20HIPIMS+ Scratch summaryArc etch + UBMArc etch + HIPIMS+Arc etch + ArcAr etch + HIPIMS+80N100N100N100NHVPL (20mN) 3415S = 4.08 m Ra = 0.050 mHVPL (20mN) 3311S = 3.52 m Ra = 0.143 mHVPL (20mN) 3150S = 2.75 m Ra = 0.143 mHVPL (20mN) 2874S

18、= 4.00 m Ra = 0.101 m第20页/共31页第二十页，共32页。21TiAlN Deposition rate normalized to one bank (4xCARC) of arc sourcesAverage power for UBM and Hipims+ = 10kW第21页/共31页第二十一页，共32页。22TiAlN HIPIMS+ conclusions Dense coatings with dense microstructure similar to arc coatings can be produced with HIPIMS+ technolo

19、gy. Adhesion is comparable to arc coatings (Argon etching and HIPIMS+ for coating). Ra value 2 to 3 times better than Arc (smooth coating) Comparable deposition rate to arc (14 kW). Coating has been found to outperform OEM benchmark for stainless milling by 30%.第22页/共31页第二十二页，共32页。23HIPIMS+ Cr2N Har

20、der and more wear resistant than CrN Has better oil wettability than CrN lower friction Tool Moulding dies Forming tools Low temperature coatings 250C Temperature sensitive steels Plastics Aim of Hipims+ coatings Lower temperature deposition less thermal loading More control over stress and microstr

21、ucture No post treatment needed as compared to arc coatings第23页/共31页第二十三页，共32页。24HIPIMS+ Cr2N Microstructure第24页/共31页第二十四页，共32页。25Hardness vs Peak Power Density第25页/共31页第二十五页，共32页。26Cr2N Comparison of Hipims+ and closed field UBM sputtering I bias-ave (A)Deposition rate (m/hr)HIPIMS+ (208 W/cm2)3,70

22、,87DC (closed field configuration)120,67Thermal loading with Hipims+ technology is lower than for DC can have higher deposition rate with Hipims+Target utilization is poor for high UBM coil currentsFull face erosion with HIPIMS+ depositionTsubstrate =250C第26页/共31页第二十六页，共32页。27Conclusions Cr2N HIPIMS

23、+ Relatively low loss of deposition rate as peak power density increases. Low temperature coating can be deposited. Eliminate post treatment after coating. Suspect that increase in metal ion/neutral ratio is responsible for refinement of microstructure at constant bias voltage It is possible to tail

24、or film stress.第27页/共31页第二十七页，共32页。28Industrial requirements第28页/共31页第二十八页，共32页。29Conclusions HIPIMS+ technology is available and has been integrated into Hauzer Flexicoat 1000 and Flexicoat 850. Hauzer is currently developing HIPIMS+ technology as an industrial solution for producing superior hard coatings. As a result of the increased ionization in the HIPIMS+ process, the process window is wide for deposition of hard coatings, such as TiAlN and