三星SDRAM编码规则

1、General InformationSDRAMSDRAM Product GuideNovember 2007Memory DivisionGeneral InformationA. SDRAM Component Ordering Information1 2 3 4 5 6 7 8 9 10 11SDRAMSAMSUNG MemoryDRAM ProductDensity & RefreshOrganizationSpeedTemperature & PowerPackage TypeRevisionInterface (VDD , VDDQ Bank1. SAMSUNG

2、 Memory : K8. RevisionM A B C D E F H: 1st Gen.: 2nd Gen.: 3rd Gen.: 4th Gen.: 5th Gen.: 6th Gen.: 7th Gen: 9th GenJ : 11th Gen.K : 12th GenN : 14th Gen2. DRAM : 43. ProductS : SDRAM4. Density & Refresh16 : 16Mb, 4K/64ms64 : 64Mb, 4K/64ms28 : 128Mb, 4K/64ms56 : 256Mb, 8K/64ms51 : 512Mb, 8K/64ms5

3、. Organization04 : x 406 : x 4 Stack (Flex frame 07 : x 8 Stack (Flex frame08 : x 816 : x16 32 : x326. Bank2 : 2 Banks3 : 4 Banks9. Package TypeU : TSOP II (Lead-free*1T : TSOP IIV : sTSOP II (Lead-free*1N : sTSOP IIL : TSOP II(Lead-free & Halogen-free*1Note 1: All of Lead-free or Halogen-free p

4、roduct are incompliance with RoHS10. Temperature & PowerC : Commercial Temp.( 0°C 70°C & Normal PowerL : Commercial Temp.( 0°C 70°C & Low PowerI : Industrial Temp.( -40°C 85°C & Normal PowerP : Industrial Temp.( -40°C 85°C & Low Power11. Sp

5、eed (Default CL= 375: 7.5ns, PC133 (133MHz CL=360: 6.0ns (166MHz CL=350: 5.0ns (200MHz CL=37. Interface ( VDD , VDDQ 2 : LVTTL (3.3V, 3.3VGeneral InformationB. SDRAM Component Product GuideDensityBankPart NumberK4S640832K64Mb K-die4BanksK4S641632K K4S640832N64Mb N-die4BanksK4S641632N K4S280432I128Mb

6、 I-die4BanksK4S280832I K4S281632I K4S280432K128Mb K-die4BanksK4S280832K K4S281632K K4S560432H256Mb H-die4BanksK4S560832H K4S561632H K4S560432J256Mb J-die4BanksK4S560832J K4S561632J K4S510432D512Mb D-die4BanksK4S510832D K4S511632DNote 1 :U : TSOP(II (Lead-freeL : TSOP(II (Lead-free & Halogen-free

7、Note 2 :Temperature and PowerC LDescriptionTemperature, Normal PowerTemperature, Low PowerPackage*1 & Power*2 &Speed *3UC75UL75UC50/C60/C75UL50/L60/L75LC75LL75LC50/C60/C75LL50/L60/L75UC75UL75UC75UL75UC60/C75UL60/L75U *4C75UL75UC75UL75UC60/C75UL60/L75UC75UL75UC75UL75UC60/C75UL60/L75U *4C75UL7

8、5UC75UL75UC60/C75UL60/L75UC75UL75UC75UL75UC75UL75Org. 8M x 8LVTTL4M x 168M x 8LVTTL4M x 1632M x 416M x 88M x 1632M x 416M x 88M x 1664M x 432M x 816M x 1664M x 432M x 816M x 16128M x 464M x 832M x 16LVTTL8K/64ms3.3 ± 0.3VLVTTL8K/64ms3.3 ± 0.3VLVTTL8K/64ms3.3 ± 0.3VLVTTL4K/64ms3.3 

9、7; 0.3VLVTTL4K/64ms3.3 ± 0.3V4K/64ms3.3 ± 0.3V4K/64ms3.3 ± 0.3VInterfaceRefreshPower (VPackageSDRAMAvail.Lead-free 54pin TSOP(IIEOL DEC. 08Lead-free & Halogen-free54pin TSOP(II4Q07CSLead-free 54pin TSOP(IIEOL AUG. 08Lead-free & Halogen-free54pin TSOP(II*4NowLead-free 54pin TSO

10、P(IIEOL SEP . 08Lead-free & Halogen-free54pin TSOP(II*4NowLead-free 54pin TSOP(IINowNote 3 :Speed 756050Description7.5ns, PC133 (133Mhz CL=36.0 ns (166Mhz CL=35.0 ns (200Mhz CL=3* All products have backward compatibility with PC100.- Commercial Temp (0°C < Ta < 70°CNote 4 : 128Mb

11、 K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-UGeneral InformationC. Industrial Temperature SDRAM Component Product GuideDensity 64Mb K-die 64Mb N-die 128Mb I-die 128Mb K-die 256Mb H-die 256Mb J-dieBank 4BanksPart NumberKS641632K KS641

12、632N K4S281632I K4S281632K K4S561632H K4S561632JPackage*1 & Power*2& Speed*3UI60/I75UP60/P75LI60/I75LP60/P75UI60/I75UP60/P75U *4I60/I75UP60/P75UI60/I75UP60/P75U *4I60/I75UP60/P75Org. 4M x 164M x 168M x 168M x 1616M x 1616M x 16Interface LVTTL LVTTL LVTTL LVTTL LVTTL LVTTLRefresh 4K/64ms4K/64

13、ms4K/64ms4K/64ms8K/64ms8K/64msPower (V3.3 ± 0.3V3.3 ± 0.3V3.3 ± 0.3V3.3 ± 0.3V3.3 ± 0.3V3.3 ± 0.3VPackageSDRAMAvail. EOL DEC.081Q08EOL AUG.08Now EOL SEP .08NowLead-free 54pin TSOP(IILead-free & Halogen-free54pin TSOP(IILead-free 54pin TSOP(IILead-free & Halogen-

14、free54pin TSOP(II*4Lead-free 54pin TSOP(IILead-free & Halogen-free54pin TSOP(II*44Banks 4Banks 4Banks 4Banks 4BanksNote 1 :U : TSOP(II (Lead-freeL : TSOP(II (Lead-free & Halogen-freeNote 2 :Temperature and PowerI PDescriptionIndustrial Temperature, Normal PowerIndustrial Temperature, Low Pow

15、erNote 3 :Speed 756050Description7.5ns, PC133 (133Mhz CL=36.0 ns (166Mhz CL=35.0 ns (200Mhz CL=3- Industrial Temp (-40°C < Ta < 85°CNote 4 : 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-UGeneral InformationD. SDRA

16、M Module Ordering Information1 2 3 4 5 6 7 8 9 10 11 12SDRAMMemory ModuleDIMM ConfigurationData bitsFeature DepthRefresh, # of Banks in Comp. & InterfaceSpeed PowerPCB revision & TypePackageComponent RevisionComposition Component1. Memory Module : M7. Composition Component0 : x 43 : x 84 : x

17、168 : x 4 Stack (Flexframe9 : x 8 Stack (Flexframe2. DIMM Configuration3 : DIMM 4 : SODIMM 3. Data Bits63 : x63 PC100 / PC133 µSODIMM with SPD for 144pin64 : x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC66 : x64 Unbuffered DIMMwith SPD for 144pin/168pin (Intel/JEDEC74 : x72 /ECC Unb

18、uffered DIMMwith SPD for 168pin (Intel/JEDEC77 : x72 /ECC PLL + Register DIMM with SPD for 168pin (Intel PC10090 : x72 /ECC PLL + Register DIMMwith SPD for 168pin (JEDEC PC1334. FeatureS : SDRAM5. Depth16 : 16M32 : 32M 64 : 64M 28 : 128M56 : 256M09 : 8M (for 128Mb/512Mb17 : 16M (for 128Mb/512Mb33 :

19、32M (for 128Mb/512Mb65 : 64M (for 128Mb/512Mb29 : 128M (for 128Mb/512Mb59 : 256M (for 128Mb/512Mb8. Component Revision: 1st Gen. A :M 2nd Gen. : : B 3rd Gen. C 4th Gen. : 5th Gen. E :D 6th Gen.:F : 7th Gen. H 9h Gen.:J 11h Gen.9. PackageT : TSOP(II (400milN sTSOP(II (400mil :U : TSOP(II Lead-free (4

20、00mil V sTSOP(II Lead-free (400mil :10. PCB Revision & Type: Mother PCB 1 : 1st Rev.0 : Rev. 2 2nd 3 : 3rd Rev. :U Low Profile DIMM S : 4Layer PCB.11. PowerC :Commercial NormalL :Commercial Low( 0°C 70°C ( 0°C 70°C6. Refresh, # of Banks in comp. & Interface2 : 4K/ 64ms Re

21、f., 4Banks & LVTTL5 : 8K/ 64ms Ref., 4Banks & LVTTL12. Speed (Default CL= 3 7A : PC133 (133MHz CL=3/PC100 CL2General Information E. SDRAM Module Product Guide Org. Density Part No. Speed Composition Comp. Version 9 pcs 256Mb 256Mb 256Mb H-die H-die H-die 3.3 V 4 Power (V Internal Banks Exter

22、nal Banks 1 1 1 SDRAM Feature Avail. 168pin PC133 Registered DIMM 32Mx72 64Mx72 256MB 512MB M390S3253HU1 M390S6450HU1 M390S6450HUU C7A C7A C7A 32M x 8 * DS, 1500mil DS, 1700mil DS, 1200mil EOL JUN.08 64M x 4 * 18 pcs 64M x 4 * 18 pcs 168pin PC133 Unbuffered DIMM 8Mx64 64MB M366S0924IUS M366S1723IUS

23、16Mx64 128MB M366S1654HUS M366S1654JUS 16Mx72 32Mx64 32Mx72 32Mx64 64Mx64 512MB 256MB M374S1723IUS M366S3323IUS M374S3323IUS M366S3253JUS M366S6453HUS M366S6453JUS C7A C7A C7A C7A C7A C7A C7A C7A C7A C7A 8M x 16 * 16M x 8 * 16M x 16 * 16M x 16 * 16M x 8 * 4 pcs 8 pcs 4 pcs 4 pcs 9 pcs 128Mb 128Mb 25

24、6Mb 256Mb 128Mb 128Mb 128Mb 256Mb 256Mb 256Mb I-die I-die H-die J-die I-die I-die I-die J-die H-die J-die 3.3V 4 1 1 1 1 1 2 2 1 2 2 SS, 1000mil SS, 1375mil SS, 1000mil SS, 1000mil SS, 1375mil DS, 1375mil DS, 1375mil SS, 1375mil DS, 1375mil DS, 1375mil Now EOL JUN.08 Now EOL JUN.08 EOL JUN.08 EOL JU

25、N.08 Now 16M x 8 * 16 pcs 16M x 8 * 18 pcs 32M x 8 * 8 pcs 32M x 8 * 16 pcs 32M x 8 * 16 pcs 144pin PC133 SODIMM 16Mx64 128MB M464S1724IUS M464S1724KUS 32Mx64 256MB M464S3254HUS M464S3254JUS 64Mx64 512MB M464S6453HV0 M464S6453JV0 L7A L7A L7A L7A L7A L7A 8M x 16 * 8M x 16 * 16M x 16 * 16M x 16 * 8 pcs 8 pcs 8 pcs 8 pcs 128Mb 128Mb 256Mb 256Mb 256Mb 256Mb I