认识Mask以及其制作流程PPT课件

1、The Role of Mask in IC Industry DESIGNMASKWAFERTESTINGASSEMBLY第1页/共26页How Does Mask Work in Wafer FAB -Stepper第2页/共26页How Does Mask Work in Wafer FAB -Scanner第3页/共26页Raw Material of Mask BlankBIM (binary mask)PSM (phase shift mask) A. KRF-PSM B. ARF-PSM第4页/共26页Size of Blank 5inch 90mil(5009) 5inch 1

2、80mil(5018)6inch 120mil(6012) 6inch 250mil(6025)7inch 250mil(7015)What kind of mask SMIC FABs use?第5页/共26页Blank Component Binary BlankPSM BlankPhoto Resist(3K,4K,4650A)CrO&Chrome(1050A,700A)QuartzPhoto Resist(2K,3K,4KA)CrO&Chrome(1000,550A)QuartzMoSi FilmPhoto Resist Opaque Metal FilmSubstra

3、tePhoto ResistOpaque Metal Film Phase Shift Layer Substrate第6页/共26页Blank Qz Characteristic RigidityHeat Expansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSoda limeSilicon-BorideQuartzCoefficient第7页/共26页Blank Qz Characteristic Optics CharacterTransmission ( % ) 20

4、0300400020406080100QuartzSilicon-BorideSoda LimeWave Length(nm)Thats why we choose Quartz as the substrate of blank第8页/共26页How to Transfer Design to Mask? WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1st InspectThr-InspectSTARlightShippingDevelopStripEtch第9页/共26页Front-end Process Blank conf

5、igurationPhoto-resistCr filmQuartzExposurePhoto-resist developWet etchPhoto-resist stripAEIASIRe-Etch ?AEI: After Etch CD measureASI: After Strip CD measureStep1Step2Step3Step4Step6Step5Step7第10页/共26页Front-end Process Dry process ResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure(EB1,EB2,EB3DUV,LB

6、5,LB6)PEB(Post Exposure Bake)SFB2500,APB5500PAGAcid generationAcid diffusionDeprotection reactionDevelopment(SFD2500,ASP5500)S(CF2)3CF3O3SS(CF2)3CF3O3SH+OHORDry Etch(Gen3,Gen4)AEI, Re-etchStrip, ASI第11页/共26页Pellicle Component Pellicle MembraneMaterialWave LengthN.C.365nm (I-line)C.E.365, 248nm (I-li

7、ne, DUV)F.C.193nm (ArF)Frame(Aluminum Alloy)Adhesive TapePellicle Membrane (25 um)Pellicle FrameDouble SideAdhesive TapeCrGlass第12页/共26页What Pellicle Do? Top ContaminantObject PlanePellicle FilmBottom ContaminantContaminant on Pattern PlaneLen SystemUnfocused Top Contaminant ImageUnfocused Bottom Co

8、ntaminant ImageImage PlaneFocused Contaminant Image on WaferMask PatternWafer SurfaceLight第13页/共26页Particle Immunity Control Particle size (D) V.S. Minimum Stand-off (T)T = (4M/N.A.)DT = (4M/N.A.)DM - MagnificationN.A.- Numerical Aperture of the LensFor glass side particle, T = 2.3mmD1T1T2D2第14页/共26

9、页Mask Quality Control C.D.DefectRegistration第15页/共26页CD (critical dimension) measurement第16页/共26页Defect TypeOpaque spotParticleProtrusionIntrusionContaminationPinholeMissing ARGlass fractureBreakGlass seedBridgeSolvent spotHard DefectSoft DefectMiss Size第17页/共26页How to Do Mask Defect Inspect 第18页/共2

10、6页Mask Layout Exemplification Normal S S +FiducialTest KeyTest LineMain PatternScribe LineGlobal MarkQA CellBarcodeMulti-Chip +FiducialTest KeyTest LineScribe LineGlobal MarkQA Cell+A ChipB ChipC ChipD Chip+第19页/共26页The Principle of STARlight InspectThe Model in SMIC Mask Shop(SL3UV) can only detect

11、 pattern sideSTAR: Synchronous Trans. And Reflected第20页/共26页What is Registration 第21页/共26页Registration Result Exemplification Mask:6”, t=0.25”QuartzMeasurement Area:Array:8*10Variation Quantity: nmMaxminX7.20.0Y22.00.2第22页/共26页How Does OPC Work? comparisondesign/maskWith OPCwafer第23页/共26页OPC Pattern on Mask 0.64 um Line Pattern0.25 um Serif for 0.6 um Contact0.57 Line Pattern0.27 um assistant bar for 0.72 um Line第24页/共26页Over-all flowCustomerFTPNote: Yellow box is