8050、8550(直插和贴片)晶体三极管

1、TRANSISTOR (NPN)TRANSISTOR (NPN)TO-92TRANSISTOR (NPN)1. EMITTER2. BASE3. COLLECTORFEATURESPower dissipati onPCM : 0.625 W (Tamb=25 C)Collector curre ntIcm : 0.5 ACollector-base voltageV (BR)CBO : 40 VELECTRICAL CHARACTERISTICS(Tamb=25 °C uni ess otherwise specifiedParameterSymbolTest conditions

2、MINTYPMAXUNITCollector-base breakdown voltageV(BR) cboIc= 100A , Ie=040VCollector-emitter breakdownvoltageV(BR) ceoIc= 0.1 mA ,Ib=025VEmitter-base breakdown voltageV(BR) EBOIe= 100 i A ,Ic=05VCollector cut-off currentICBOVcb = 40 V , I e=00.1i ACollector cut-off currentICEOVce= 20 V , I b=00.1i AEmi

3、tter cut-off currentIeboVeb= 5 V ,Ic=00.1i ADC current gain(note)H FE (1 )VCE= 1 V, IC= 50mA85300H FE (2)VCE= 1 V, IC= 500mA50Collector-emitter saturationvoltageVcE(sat)Ic= 500mA, I b= 50 mA0.6VBase-emitter saturation voltageVBE(sat)Ic= 500mA, I b= 50 mA1.2VBase-emitter voltageVBEIE= 100mA1.4VTransi

4、tion frequencyfTVce= 6 V,Ic= 20mAf = 30MHz150MHzCLASSIFICATION OF HRankBCDRange85-160120-200160-300TRANSISTOR(PNP)S8050LT1 TRANSISTOR ( NPN )SOT 23TRANSISTOR(PNP)TRANSISTOR(PNP)1. BASE2. EMITTER3. COLLECTORFEATURESP CM :0.3W(Tamb=25 C)Collector curre ntIcm :0-5ACollector-base voltageV(BR)CBO : 40VPo

5、wer dissipati onELECTRICAL CHARACTERISTICS(Tamb=25 °C uni ess otherwise specifiedParameterSymbolTest conditionsMINTYPMAXUNITCollector-base breakdown voltageV(BR)CBOIc= 100 A,Ie=040VCollector-emitter breakdownvoltageV(br)ceoIc= 0.1mA , Ib=025VEmitter-base breakdown voltageV(BR)EBOIe=100 1 A, Ic=

6、05VCollector cut-off currentICBOVcb=40 V ,Ie=00.11 ACollector cut-off currentICEOVcb=20V ,Ie=00.11 AEmitter cut-off currentIeboVeb= 5V ,Ic=00.11 ADC current gain(note)HfE(1)Vce=1V, I c= 50mA120350HFE(2)VCE=1V, I C= 500mA50Collector-emitter saturation voltageVce (sat)Ic=500 mA, I b= 50mA0.6VBase-emit

7、ter saturation voltageVce (sat)Ic=500 mA, I b= 50mA1.2VBase-emitter voltageVBEI E= 100mA1.4Transition frequencyfTVce=6V, I C= 20mAf=30MHz150MHzCLASSIFICATION OF HRa nkLhRan ge100-200200-350DEVICE MARKING :S8050LT1= J3YFEATURESPowerdissipati onPCM : 0.625 W (Tamb=25 C)Collector curre ntIcm : -0.5 ACo

8、llector-base voltageV(br)cbo : -40 VTO-921. emitter2. BASE3. COLLECTOR1 2 3ELECTRICAL CHARACTERISTICS(Tamb=25 C unless otherwise specified)ParameterSymbolTest conditionsMlNTYPMAXunitCollector-base breakdown voltageV(BR) cbolc= -100A , Ie=0-40VCollector-emitter breakdownvoltageV(BR) ceoIc=-0.1 mA ,Ib

9、=0-25VEmitter-base breakdown voltageV(BR) EBOIe=-100 i A ,Ic=0-5VCollector cut-off currentICBOVcb = -40 V , l e=0-0.1I ACollector cut-off currentIceoVce=-20 V , l b=0-0.2i AEmitter cut-off current1 EBOVeb = - 3 V ,Ic=0-0.1i ADC current gain(note)HFE (1)VcE=-1 V, Ic= 50mA85300HfE (2)VcE= -1 V, Ic= 50

10、0mA50Collector-emitter saturationvoltageVce (sat)lc=-500mA, l b= 50 mA-0.6VBase-emitter saturation voltageVbe (sat)lc=-500mA, l b= 50 mA-1.2VBase-emitter voltagevbelE=-100mA1.4VTransition frequencyfTVce=-6 V,lc=-20mAf = 30MHz150MHzCLASSIFICATION OF H fe(1)RankBCDRange85-160120-200160-300S8550LT1PNP

11、EPITAXIAL SILICON TRANSISTORSSOT 231. BASE2. EMITTER3. COLLECTORHIGH VOLTAGE TRANSISTOR: (PNP)FEATURESDie Size0.44*0.44mmPower dissipati onPcm : 225mW(Tamb=25 C)Collector curre ntIcm : 0.5ACollector-base voltageV(br)cbo :40VELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified )ParameterS

12、ymbolTest con diti onsMINTYPMAXUNITCollector-base breakdown voltageV(BR) cboIc= 100 卩 A E=030VCollector-emitter breakdownvoltageV(BR) ceoIc= 1 mA , IB=021VEmitter-base breakdown voltageV(BR) EBOIe= 100 gA, Ic=05.0VCollector cut-off currentICBOVcb= 30V , I e=01.0gAEmitter cut-off currentIEBOVeb= 5V ,

13、 Ic=0100nADC current gain(note)H FE (1 )Vce= 1V, I C= 150mA120400HFE (2 )Vce= 1V, I c= 500mA40Collector-emitter saturationvoltageVcE(sat)Ic= 500mA, I b= 50 mA500m VBase-emitter saturation voltageVbe (sat)Ic= 500mA, I b= 50 mA1.2VBase-emitter voltageVbE(o n)Ic= 10mA, V ce =1V1.0VCLASSIFICATION OF H fe(dRa nkB9CB9DB9ERan ge120-200160-300280-400电各爱蔚者网站册况目“电子爱好者”网站是一个面向广大电子爱好者、大专院校学生、中小型企业工程技 术人员的电子