使用直流电弧等离子体喷射合成纳米级掺锑锡氧化物粒子

1、闪酪牌淳骏刨赉卧耻吭毓英文原文竺仲促且肾漪飑允孬茼激Synthesis of nano-sized antimony-doped tin oxide (ATO) particles using a DC arc plasma jet帝腼妻疥措醚若筇丿攫跖Keywords: Thermal plasma Antimony-doped tin oxide (ATO) Nanopowder蚝辉佳簧赞猓契键攒鲟权Abstrct 犬龟屁钱逝馁埏称蠹保屁Nano-sized antimony-doped tin oxide (ATO) particles were synthesized using DC

2、 arc plasma jet. The precursors SnCl4 and SbCl5 were injected 衬吴怿揶篡父睫歹袈护搬into the plasma flame in the vapor phase. ATO powder could conveniently be synthesized without any other post-treatment in this study. To control the doping amount of antimony in the ATO particles, the Sb/Sn molar ratio was use

3、d as an operating variable. To study the effect of carrier gas on the particle size, argon and oxygen gases were used. The results of XRD and TGA show that all Sb ions penetrated the SnO2 lattice to substitute Sn ions. With the increased SbCl5 concentration in source material, the Sb doping level wa

4、s also increased. The size of the particles synthesized using the argon carrier gas was much smaller than that of the particles prepared using the oxygen carrier gas. For the argon gas, PSA results and SEM images reveal that the average particle size was 19 nm. However, for the oxygen gas, the avera

5、ge particle size was 31 nm.郧坞髂缠挢忪姨翎髋咸篇1. Introduction瞳刎葆杰渊旱诓经秃柏邺SnO2 is a typical wide band gap semiconductor and its conductivity is generally realized by non-stoichiometry associated with oxygen vacancies in the SnO2 lattice . However, the content of oxygen vacancies in SnO2 is宄镎担鲈卮化冲猞胁闭峻typically

6、 difficult to control. Tin oxide doped with Sb, Mo, and F has been studied in the past due to the unique properties of the doped tin oxide such as preferable conductivity and transparency in visible light wavelength range . In particular, Sb is considered the best dopant due to its stability. Antimo

7、ny-doped tin oxide (ATO) is an n-type semiconductor with electrons in the tin 5-based conduction band provided by the antimony dopant . The conductivity and transparency can be controlled by varying the amount of Sb dopant instead of by manipulating the non-stoichiometry.晋敦卜睦诣睹羲掺鹎妯剂ATO has been stud

8、ied in the past to measure its properties of the inherent electrochromism as well as its capacity for use in charge storage and as a catalyst . At low Sb doping level, ATO has properties of transparency at the visible region with good conductivity, while reflecting infrared light. These characterist

9、ics enable ATO to be used as a transparent electrode for electrochemical devices , displays , and heat mirrors and energy storage devices . Heavily doped ATO is a good catalyst for the oxidation of phenol and olefin and the dehydrogenation and ammoxidation of alkenes .姑锌蜕珠橇甲它喁排耔叭Thus far, ATO partic

10、les have been mainly synthesized by solid and liquid state reaction method, such as solid state reaction , coprecipitation , a hydrothermal method , and a solgel method . Although solid and liquid state reactions are considered suitable methods to synthesize ATO nanopowder, these approaches require

11、a large quantity of solution and organic materials, longer processing time, heat treatment for crystallization,盼楦缧晷烘售议佼珥牢龊filtration, and drying process. To overcome these weak points, in the present work we introduce a thermal plasma process to synthesize ATO nanopowders. The thermal plasma process

12、 has unique characteristics for the preparation of nanopowders as it involves high temperature and a quenching system .寤缪王般诀辰嗲涣仪容令In this paper, nano-sized ATO powders were synthesized by an argon plasma jet at atmospheric pressure. To control the doping amount of ATO, different Sb/Sn molar ratios w

13、ere applied. The effects of the Sb dopant on the phase composition and particle size have been discussed.祷灵嵫拨嬖嵬疰厚准矣胰2. Experimental枢锢咎晟翡昱郏受事厍颠Nano-sized ATO was synthesized using an argon plasma jet at霍逝紊坝浼捶篾豳柩店赋atmospheric pressure. Precursors were tin (IV) chloride (SnCl4,茭肿哿役却兔逾挥柃虑暂99.9%, Aldrich

14、 Co.) and antimony pentachloride (SbCl5, 99%,Aldrich拾缓屯胤鹘稽辣霁布淞认Co.). Because SnCl4 and SbCl5 easily evaporate at room temperature庀堍蒜律馘选冰粝蟪胆尔and pressure, they were injected into the plasma flame in a vapor凼捷度愀遨呷抡菀雪醛鲭踽粜丌件圹找脂橙檎卦镘Fig. 1. Schematic diagram of DC plasma jet for synthesis of ATO nanopowde

15、rs.敉勉鹞栖吲蕤鲠烯藿挟疃Table 1沸趣劫蘸怂青琅耧盱洪荷Experimental conditions for synthesis of nano-sized powder促在朋商贩嗅梨嚏晤甾晨Plasma power砩丫桥浪股橼不二青桴忠300A, 6.9 kW瓠桁焖鸠媒墩舄蔬迁瘰缪梢庀诽锖圃搜恁咽揉拌捍Plasma gas龟鳍签轷汰疗卫亠杷芭娃Ar: 15 l/min监陪蓼咩句赳胤词兹讴阌扉午除腊刍蹭艋您恨蚓绻Pressure蹯亭晴讫衰蓬鹣劣靖蛞而750 Torr伴词索昧膦剑蕺乇桃日访丁舳刳亲叶萁蓓龌晤枷葡Duration of experiment睛渡赕况尾跣翔胞瓴忒雇10 mi

16、n镭欷尽醛尢岖把惮篾坟卿试较依讫幕祸飓裘掀役卤Source materials党啄琵缴盛陡诀具怯瘥曹Tin (VI) chloride (99.9%, Aldrich Co.), feed rate: 0.41 g/min (carrier gas: Ar 2 l/min) Antimony pentachloride (99%, Aldrich Co.),暖螽銮迨凵扪推阢秣恃猗feed rate: 0.076 g/min (carrier gas: Ar 2 l/min)燮橘织普蛞勺逻锍幼蕃勾措密锆筻窭笊岭渐遑懒豫莫耳悛擤枷膈苞蔚纳莆炉phase without additional hea

17、ting. Fig. 1 shows a schematic diagram of the DC plasma system. The source material was injected into the plasma flame through a bubbler by carrier gases of Ar and O2. The carrier gas flow rate for injection of the source materials was maintained at 2 l/min. The concentration of SbCl5 in the source

18、materialwas varied in order to control themolar ratio of SbCl5/SnCl4 from 0.27 to 1.40. The experimental conditions and operating variables are summarized in Tables 1 and 2.鞘哐阶缁莪鲁谒罡蛸弥谌Synthesized powder was collected at the reaction tube wall. These phase compositions of powder was analyzed using an

19、 Xray diffractometer (DMAX 2500/Rigaku), an energy dispersive Xray spectrometer (s-4300/Hitach Co.) and transmission electron microscopy (JEM-2100F/Jeol Co.). Morphology and particle size of the synthesized powder were observed via the scanning electron microscopy (S-4300/Hitachi Co.), light scatter

20、ing particle size analyzer (ELS-Z/Otsuka Co.) and the Brunauer,氓匾烃舐捐丬玖续嘧济琛Emmett and Teller (ASAP ZOZO/Micromeritics Co.). The thermal properties of the obtained ATO powder were investigated using a thermogravimetric analyzer (TGASDTA 851/ Mettler Toledo Co.).读慈踌袱排跻厶舫狩鸠虔3. Results and discussion淖新峻哆

21、壶票曙碇牡狮噜Fig. 2(a) shows the XRD patterns of the ATO powder synthesized from source materials of different Sb/Sn molar ratios. Doped Sb species was identified on the EDX graph, as shown in Fig. 2(b). Because all peaks agreed well with cassiterite SnO2 and the peak corresponding to Sb-related compounds

22、 was not included in the XRD patterns, it is concluded that all antimony ions were incorporated into the lattice of SnO2 to substitute for Sn ions. In addition, there was no noticeable change in the phase of SnO2.诳涯仗峡颃并鲢熘修捭田Fig. 3 presents TGA curves of the synthesized ATO5 and commercial SnO2 and S

23、b2O3. The ATO5 did not show the weight loss and the SnO2 curve was similar to the ATO5 curve. Metallic Sb and its oxide, such as Sb2O3, Sb2O4, and Sb2O5, are volatile at higher temperature due to their low evaporation heat and low melting point . Therefore, collected product蝼裘嵬籍坌属隳复薰哩艄瘤瘸筇鲒曼饪芽诠拭楂盒递耪蕻

24、恩焐屦镜恙睦手菱Fig. 2. XRD patterns (a) and EDX analysis (b) of the synthesized ATO powders梯苯毯孪洳遽蓦袜宄堆灶Fig. 4 shows high-resolution TEM photographs images of pure SnO2 particle and Sb-doped particles in the synthesized ATO5. Clear lattice fringes in Fig. 4(a) reveal that well-crystallized SnO2 nanoparticles

25、 can be钦酣傲疡舰拦槲跄惊垲琪prepared using the thermal plasma process. Meanwhile, defects due to the 轨硭蜉羧刘馊傈筏宽罅沼Table 2克兮礅雄焚墓婿讲鲕钭缺Operating variables for synthesis of ATO powder搴曦制辟谵栓憩锅簧相骑侪褐惭啦览奢艿割甭鸦俘Sample no.筹蜜史梦肉挖亳炼掴篙蘅残邳喾凼衔储龌瀑芘膣襁忿伲僳旬红赴喊次笾趁镩镁阿蒂闳闲税帷讧旬容酯尢浠磺凸绌澧锑避鲵鄱屑悖躇飕瑭镝个龚嘉趟轾庳睡努烯囝衲狸播疒产冒试邮准谎插饶芦貌亓鲐沌醭缀迁继限冥胶盔荡吐沥僬桡血

26、控告燹伎肌寇馈宪融ATO1其獐脊张掷凹泉灵丰哀趁ATO2轾比让睹咤庖谲堑蒺篓及ATO3徕癃璩掊猥避锂銮佥溷浓ATO4褒半潦税涟赂滴耖威瞑馥ATO5袒愉绍喁舱塑昊梆匠笞孳ATO6迟聒两黩艘砧怂鲔堋颗缆ATO7环爵拦妹锟缑旆宅侥娄阶ATO8季婪膀搐紧乖淡兜制恝悌苘髫朦洒莼毖盱彬胀劾窍SbCl5/SnCl4 molar ratio in bubbler噩佳嫖采陀苗碇瓞缥鋈诫0.27 洄龈祺山封畛餮浚殂抓拒徜灿胁攮如漫稳怠埂椒赦0.52铖疖甬殍晗伯吆诛饭刮蜢0.81蜉阗纭忿箱吃蒉两跷鲇陴1.08心刹鑫嗣禄渤橥祛感诞裆1.40獠玄堰攵梁苫妨灶箅兼鞍1.40捅虐胧巾藕街哪卣襁幺曦1.40世灯睦瞳沪疑握椅闾

27、觊砧1.40桴舔华阆度匀哗怪恋眸穴Reacting gas flow rate (O2)妲鹚计赶椭昱浩艿惹蛛鸭3 l/min 馏赕呵螳死救垭蔽娘诖芡戆厩仪券矛擦烩稽髋得睁每阑吲辗慌锣锪龟蚰随硌御缚恼菀统掀瓦珲墓茄尝鹩翊蜱倘置笆僵码罚羡觥謇冖蓰给柏缗喵辣巡畲担1 l/min馈酚照褡琼瞥身铁斐嬖料3 l/min惟雷阑鹧蜒岔蛀贲扳苘兀5 l/min杲朐羞劝病艳吕秕嵛筑蟊Type of carrier gas 赜悴险僖村慈烫惠功帅烘O2: 2 l/min 壮矍奢胴酢锌浜蒇昭锰蓉璁饩尿帙拇呀矣瓤膈卢背缣们锣凉舡匾悸佑坂怏蹈绣优怒吹帙漠融琅佶茚肯拔彝痊砖刎葩绒醅接灯匪低伏佶睃襦缱窟竿凇疗焯Ar: 2 l/

28、min骆幡渥鳔痔棹纵驼喳沙撇卫糯口哉桥姹哺侗轮跳误懒旌琵宰缁孤宓戒矣脸漠Sb dopants in the lattice of SnO2 were identified in the doped particle (Fig. 4(b). The Sb incorporated into the SnO2 lattice in two ionic states was Sb (III) and Sb (V). Sb (III) has a larger ionic radius (r = 0.76A ) and Sb (V) has a smaller ionic radius (r = 0.

29、60A ) than Sn ion (r = 0.69A ). Hence, the. Sb (III) and Sb (V) contents can change the lattice parameter and can induce a defect in the SnO2 lattice 纥魉铂枪熳藩衡泪瑜甲痕Generally, the approximate doped state in SnO2 can be readily identified by confirming the ATO color. Sb-doped SnO2 appears blue or dark bl

30、ue color as in this study, whereas pure SnO2 and antimony oxides such as Sb2O3, Sb2O4, and Sb2O5 do not show any blue color. According to溯伶爨修力丞午达拽翳濑离俸偃热殿目鲥痈哲黼珞Fig. 3. TGA analysis of synthesized ATO5, and commercial SnO2 and Sb2O3 in pure Ar atmosphere: (a) synthesized ATO5 by thermal plasma process

31、, (b) commercial SnO2 (99.9%, Aldrich Co.), and (c) commercial Sb2O3 (99.9%, Aldrich Co.).偬薪了侄疤且花辽摊怕休Nakanish et al. , as the doped level is increased, the color of ATO is changed from light to dark blue. The color of ATO according to the doping level in the present work is summarized in Table 3. As

32、 the amount of doping of ATO was increased, the color became darker. This change in the ATO color is attributed to the provision of additional electrons blow the褰劈蛴舯怼垌苜醌鸵衔茶conduction band (transition state) in SnO2 matrix by the Sb ions of doped state in the SnO2 lattice. It thus induces color due t

33、o the property of ready excitation of the additional electrons .诳解阑稿凝缑苑娆阗摇褚To control the doping level, the Sb molar ratio of the source material was varied. The amount of doped Sb in ATO as a function of operating variables is summarized in Table 3. As the Sb molar ratio in the source material was

34、increased, the amount of doped Sb in the ATO powder was increased. The results imply that the gas phase concentration of SbCl5 in the bubbler was increased as a result of increasing the SbCl5 concentration in the source material. In other words, the ionic state of Sb was increased in the plasma威泌浸颠火

35、剑侧旌馘春炭flame as the gas phase SbCl5 concentration was increased.灏缮享牛汐聘毯氯鲛的貘We also evaluated the effect of varying the reacting gas (O2) flow rate. Fig. 5 presents the XRD analysis results for ATO synthesized at different flow rates of the reaction gas. At a flow rate of 5 l/min, the peak intensity w

36、as relatively high-compared with that at other conditions (ATO6 and ATO7). In addition, the doped amount was slightly higher than at other 秃剔后辉合爵烦髭禁晨劭Table 3腌佩遄蛆使屠谜缬媳疤溪Characterization of ATO synthesized by the thermal plasma process刹威浊缂觏穆娘牡经糠厮Sample no. 錾慊溏画蜂碾屦咂凇维籽褥厄粮赖芟蠼艾稷桁浔蔼Color酌儋挤鹏涟埠汾窗丢獬陌EDX (Sb

37、/Sn)酌粕惜倘酪海芄勺俘豆呐XRD下轩溱涩佐乓辛浚拎帙驹BET忻翊陋搁鸠啬杓态蔷心署廖危失亭妤忧蜕刨膛扑皖朴镂虿骼暗谪菟淙翘瞻巩扬沸恫鲕匹酢螺幔铽镝隧Sb(atomic %)菩菲蔚迁拳嗄拌掠栗奉即苞锔蝼翟实抬飘患嫁囱税DXRD溯洱鸬脍献钲脎舣踽黑继(nm)俗横苒鲒咙蚁嫣臬冂郜惮挫俏葆截赫锼蜡惮浦髹父Surface让廨悚除焕桴虽吐浣猷黼area (m2/g)盏檎样乌啊觎玫帛捕咛绉监独乓淮蘖梯陆毙缺壳滦DBET匆兑躅湓哲缤嘹嘲九晌嬷(nm)辰负值甲岿耿蘧赢堙顾通跤旅茹联砝龅剁巅漠泔荥ATO1 遵菩侍耕芭襟杉倚蒂嵴女觞薷竺舌髀妫蔸筷洛拟苄Blue皆计秧盗项拇胼呢拜询蛇3.2摇括饰问愆祭痰马杉喙呸2

38、2.6芍埽泪寐坪螯觳戽劢绚遭32.8嘤裨潭民揭道舭盱呈贵屑26.3脏忾宫遽单女修藉蕤芩找ATO2 艏撩管余歼毳夯军荽砘钹叼膪腺钛缁涑狐优运篓互Blue衡猞鹬扌园旮晏氽借货咆4.3溃隐冗妇弄几讠芳侣麻癯20.0獗倨忍智谎嫔咎昙四忡仄43.7戾憧让擘劫军糅砗拍容矩19.7馐辗酥茂姣觎朗郭裎挪甸ATO3 牵考果龃矍澄佥狗廑赂肝姚躲硅鸢鹋嶂满钇虻章朔Dark blue诽琬阋酿隘汕貔肼陬穆捞8.3鹭颖搞票卅煎箪狎慈擘岍19.1墩骸阆浒叮庋常榭殊牛苈39.0捶酬帧贻尉绾史晔悛擎怜22.1郸颉鲟霪聍冻硼艿音晁孰ATO4拦蜮熄骋进喃蟥采釉艹儋Dark blue咤逃垢膀仟盥唇裤跸最芽10.6 担见察篝涤幂饴螬丬

39、卿津末淤蓠唯疏澈肄汲品屺岂24.3蕖栲啭租懊擎郧加卯懈来33.1微访资虚当汁挽堀苌轾温25.7勤椟阌居孵醐漭娇桥桴猞ATO5估吃暧泥棉嚆按迷勤卑阊Dark blue魁邮肭铿搴丌悍骅咒提勹14.9 湄妆悌酸这茫鼓痂荡葳沽八墓绪钦豆阜阋塄藿崞孢23.9讼跸裆挞词偕颇栅摧须谌49.5霭莅染蓉呋蝗纭赊明姊佣17.6醪纤菔蛹腕芮庋胤璺述缁ATO6饬玎说赈法崇摇跳砌虼暂Dark blue髫昝喽漪阌死铡睁女叛奎10.8 鲆壁彤眚媒钞颞谩腔绒举14.6巴恤扉泶鹪甚艚亠惊林琳77.5辩蚜刖谳兢萌恳岛律勃慌11.8徘楱账咪疫埽肄朵韦亩懊ATO7弃世羹雎绯枋盟鸹娑杈猎Dark blue铂郅葫积凭油嵴氵亲绅料11.6

40、 市穗滢彪欺辏嵘鲥荏愣咆痊胄噢变山岛羧戛党逊逑13.0分洲彼见晶噌宪膨舂多饣81.8勿彭迨稍醯练摆稷檠碜籍10.6夺懒芏防围穆苄蒴粜呢吓ATO8丌仟蟾元宕埴婴苑樘损膊Dark blue俄倬鞴擒狼肋拈壕娼獠乩14.8宿辖崞奸缙身歙佥诜祗绅蜿萜鹪签疗德漆咬疴诗硒14.7廉咯庥倍崤崴籴晌祯汶情72.8融崾僖答嘣柳谎陵儡缘胸12.1瞻踽戚伞斧鼯睿性兵螃贝靴瓤厩酾盎横莲橛谖栩职conditions (ATO6 and ATO7), as shown in Table 3. This may be attributed to the difference in the crystallinity betw

41、een ATO8 and other conditions.肖篮嫫荡酏卷怫岸疚选髋 龃灌线遇缸牍掐厢北鼠蚕哩芬骣瞍洹疱枘侨窈喱男涧筏领匹伎目宝雹纰增戬低腹圯芋庥刳俨邓茄疝窖Fig. 4. TEM photographs of pure SnO2 particle and Sb-doped particle in ATO5 powder synthesized by the thermal plasma process: (a) pure SnO2 particle and (b) doped SnO2 particle.濮辐烃莹染氯绍补而胃惨涧幸贷岽岷浯融赦玫呼烩璇鞣避驶佣粟健阎尘镍觅帮湿顺弓

42、碴乩甑硫倮袄臀堑婊疆镜汪猢偻墒是毽脑薨异误撵酱距桔慰邛蠢边床妍掠钚嬲枯誓慰熄氨箨渖屣捱络虑抨衩了培幻而邰迁蠕漓剂露瞿淋眸家Fig. 5. XRD patterns of the synthesized powders under different reacting gas flow rates (O2): (a) ATO6: reacting gas flow rate 1 l/min, (b) ATO7: reacting gas flow rate 3 l/min, and (c) ATO8: reacting gas flow rate 5 l/min.馑酃勘墚范鞒砀畿呓跛漠壑馁橘妥幂

43、澧蹈扰头赫魑Fig. 6. SEM image and particles size distribution of ATO synthesized under different types of the carrier gas: (a) ATO5, (b) ATO8, and (c) PSA results.却黏琨囿茛翠蛀请椎懦忍To study the effect of the carrier gas type on the produced particles, we used the oxygen and argon as carrier gas. Fig. 6(a) and (b

44、) shows SEM images of ATO5 and ATO8. It is observed that the size of the particles synthesized using argon carrier gas was much smaller than that of the particles prepared using oxygen carrier gas. The particle size distribution is also analyzed by means of a light scattering particle size analyzer

45、(PSA), as shown in Fig. 6(c). The average size of the particles is 19 nm in Ar carrier gas and 31 nm in O2 carrier gas, respectively.蛤圃颈答投揭携衲付卺讹The average crystallite size (DXRD) and the average grain size (DBET) are summarized in Table 3. DXRD and DBET were calculated by the full-width at half-max

46、imum using the Scherrers equation and the specific surface area . The results of the calculated particle size by XRD and BET similar to the SEM images and PSA results. 豚绷铂卢互诏迥嵴伛鬻孵Generally, in the gas phase reaction process, the particle size can be decreased by decreasing the total gaseous pressure

47、 in the system. Total gaseous pressure is dependent on the particle number density of the gas phase. This is related to the strong dependency of the mean free path of chemical species in the gas phase on the particle number density of the gas phase. The mean free path of chemical species in the reac

48、tion tube is described by the following equation .痕澄钳嗟汞煤酵酪蹦藏结where l is the mean free path, d is the diameter of chemical species and n is the particle number density of the gas phase. As the particle number density is decreased, the mean free path of chemical species is increased; therefore, the pr

49、obability of collision among the chemical species decreases.棺盂跣籀墁定税猴虎陴锁In this work, when Ar is used as a carrier gas, it also acted as a diluting gas in the reacting tube due to its inactive properties. Hence, we think that Ar decreased the particle number density of the gas phase in the reaction t

50、ube and it is one of many factors fo decreasing the particle size.软迕棒鳢郜恕溜闻怯互诗4. Conclusion垅鲸席诩妖耩嗌柬颂稳鸲Sb-doped SnO2 particles were successfully synthesized using a thermal plasma process in the gas phase. We could easily identify the doped state by confirming presence of blue color of ATO. The doped

51、state was also analyzed by XRD, TGA, EDX and TEM. These analyses revealed that Sb-related compounds were not synthesized by the thermal plasma process and all Sb ions were doped in the SnO2 lattice. As the concentration of SbCl5 in the source material was increased, the amount of the doped Sb in the

52、 ATO powder similarly increased. The effect of the type of carrier gas was also investigated. Ar gas acted as a diluting gas due to its inactive据寓艾戚澹忖龊晓歇莹帆property and caused a decrease in decreasing the particle size. PSA results showed that the average particle size was 19 nm when argon was employ

53、ed as a carrier gas whereas an average particle size of 31 nm was obtained in the case of oxygen carrier gas.啉妥痨媪枞逛髁霓娉鹾剌Acknowledgement旅值荃耨纺抨蝗邾喹髅末This work was supported by INHA University Research Grant.碎浙屙效擎赕愦焖膏眈宸鲷华铵勺伪宗粹壳踣芳跄箩七脓竣裂憔僭受砂寻矢恬文奈醛单恕悸婵妄迕黯疙摆虽亮翔藕赁苫综威媚烧攴莽郓沓任询斩唪冒埠楣碹甲圯眨毂搡耗馓苌撑裸积箍馇慑笏恃郅彗应蛏镒分夸侏褥荆双氨

54、墀要跷肉逮怂茱乐握惨圾躁韵箐饧蚧璧媒卺奠姆躅华芥爨糈艄忒猴葺婧銮友擅元邝繁维疋磁贰龇褊坟醺塑玢哲溷缒钠太呛涨宿吻窖沉中文译文私恢缭艽脶沃子撤怕删懔使用直流电弧等离子体樽祚器镭赕为懿爬驮避喷射合成纳米级掺锑锡氧化物粒子鲑茬侍铜扈仓涤蟛刂镌枸橼矿逐楮稞扛白钇雏噌淑关键词： 热等离子体 掺锑锡氧化物(ATO) 纳米粉末蘖刳碳陕惧倨褒媒箔路腐摘要：杜籀仟谐腹捐获环牟赛猎以纳米掺锑锡氧化物颗粒为原料采用直流电弧等离子喷射。SnCl4和SbCl5注入等离子体火焰气相。ATO粉可方便地在没有任何其他合成后处理研究。控制兴奋剂锑量的ATO粒子的锑/锡摩尔比被用作经营变数。氩和氧的气体被用来探讨载气的颗粒大小的

55、作用。 X射线衍射结果和TGA表明，所有锑和二氧化锡离子进入晶格取代锡离子。随着SbCl5 集中在原材料里，锑掺杂水平也有所增加。大小的颗粒合成使用氩载气远小于粒子准备使用氧载气。对于氩气， PSA在结果和扫描电镜照片表明，平均粒径为19纳米。然而，氧气，平均粒径为31纳米。鹳娲硗锼陷槔燧鉴苤烙旆1 引言 二氧化锡是一种典型的宽带隙半导体及在二氧化锡其电导率普遍实现了非化学计量相关与氧空位 。然而，在二氧化锡氧的量通常是难以控制。研究掺杂氧化锡锑，钼，和F在过去是由于独特性质的掺杂氧化锡，比如可见光波长范围内可取导电性和透明度。特别是，锑被认为是最好的，因为它掺杂稳定。掺锑锡氧化物（ATO）是

56、一个n型半导体与电子在5天的导带所提供的锑掺杂。电导率和透明度可控制不同的数额锑掺杂而不是操纵的非化学计量。 饶愍肀晡嗒砹鳜出窠贶采在过去ATO究了衡量其性能的影响固有的电致变色以及用于收费存储和作为催化剂的能力。在低锑掺杂水平，ATO性能的透明度在可见光区有良好导电性，同时又反射红外光。这些特征使ATO被用作透明电极的电化学设，显示，热反射镜和能源存储设备。对于苯酚和氧化烯烃和脱氢和氨氧化烯烃， 重掺杂ATO是一个很好的催化剂。渗愧蔬庭褛琛苛涂雹第牖迄今为止， ATO粒子主要是合成的固体和液态反应的方法，如固相反应， 共沉淀法的水热法，以及溶胶凝胶方法。虽然固体和液体状态的反应被认为是适合合

57、成纳米ATO的方法， 这些方法需要大量的解决方案，有机材料，处理时间较长和热处理的结晶、过滤、干燥过程。为了克服这些薄弱点，在目前的工作介绍了一种热等离子体过程综合ATO纳米。热等离子体进程独特的特点，编写纳米，因为它涉及高温和淬火系统。 蜈牒睃宕秦椒况黧癖克赓在本文中，纳米粉体ATO在大气压力合成了一种氩等离子体射流。控制兴奋剂数额ATO，不同锑/锡摩尔比适用。对影响锑掺杂对相组成和粒径进行了讨论。凵驶壶淝崎凸俩氦莓寡戤2 实验巨昃颟斑耻矜唰悭佗塄跺图1直流等离子体射流的合成ATO纳米示意图。虱辽购炸螽爨签逅酬躞停表1 实验条件下合成的纳米粉体鳟琼累豆怿砍胆岫沟弭彀等离子电源慕灸丐仄讷绍驼钆

58、棋嵯冤300A ， 6.9千瓦糇钊配荒盘发跖珠猫入镓等离子气体怀景榉挠砘仗淄番酱圣蛩氩： 15 l / min胯筑佗锇羝刷瞠垢温岿葚压力贝杈枯酡朽矢杈箩婷荠瑟750子嵬绔砹踉脎柏珩蓠儇消殴持续时间嗟腺榄巫炙虎引坍秀膳毳10分钟髅迈妁蹿蚪匣畴蟠箩接鼠原材料埃荠掇廑瞥俪迟搭狁抡会（六）聚氯乙烯（ 99.9 ，奥尔德里奇有限公司），进给速度： 0.41克/分钟（载气：氩2升/分钟）锑五（ 99 ，奥尔德里奇有限公司），进给速度： 0.076克/分钟（载气：氩2升/分钟）捌诟嗓连野辕酷祢耥挽碉到频痪嫔嚼廊亟滑醴蠃蠕在大气压力使用氩等离子体射流合成纳米ATO。前体是锡（四）聚氯乙烯（四氯化锡， 99.9 ，奥尔德里奇有限公司）和锑五（