NOR,SRAM,SDRAM,NAND结构和容量计算

1、NOR flash, NAND flash, SDRAM 结构和容量分析 1.NOR flash结构和容量分析 例如:HY29LV160 o 引脚分别如图： 邯I U 牌IU AH3I U 叩2 U A|11| = 憫= W匚二 半| = 叩9- NC 二 10 II RESET；二：1J NO U 14 RYBY* = 10 啊U 叩H二 屮1匚 碉u 半U 屮= u F 18 19 务 21 / TSOP48 屮|二 A|2|U 刖匚 / UCEC的 nnnflnnnnnnn = nnnnnnn=nE;R 4MVI心 04M40!wl3M3?lnl小制32|311301创2MKI25t一

2、A19：0 DQ|?:O CE# DQ14:8 OE* DQ15/A-1 WES RY；BY? RESET? BYTE* w I I I I I 旬1 in x1S d-evs 4. Ths 41h is onl/ rsquirad for 512Mb and 1Gb devi-as. Table 8. Address Definitions Address Definition A0-A7 Column Address A9 A26 Page Address A9-A13 Address in Block A14 -A26 Block Address A8 A8 is set Law or

3、High by the OOh or01h Command, and is Dont Care in x1 6 devices 256word需要8bit来表示，刚好A0A7的8位地址就够用了，所以不存在half page之说。Readl对于16位的device来说只有00H的命令，而没有01H的命 令。而访问的区域只存在main area和sparearea因datasheet是8位和16位 公用的，所以set commands的表格跟8位是一样的，只是01H的命令对于16位 的无效。具体如何参照datasheet,如下图： Pointer Operation of K9K1G16X0A(X

4、16) Samsung NA.N D Flash has two address painter commands as a substitute for tha most significant column address. * 00h command sets the pointer to A are3(0-25 5TOrd ) and 50h command seis tha po inter to B* a re a (2 56-25 3.w rd). Wrth thes-e commands the starting column acidrssscan be sat taany

5、of a hote pag9(0-233Aord). 00h* ar * 50hf is sustainsd until anoithpmddrmsspointrcom- nrand is in putted To program data starting from A or B area. QOh or 5Qh* command must be in putted bafara Mh* wmma nd is writ- tan. A complete read operatk)n prior to 80h command is not neo-essary. Command Pointer

6、 position Area OOh 0 4- 255 word rrgin array(A) 50 h 256 - 263 .TOrd spare array(B) Table 3. Destination of the pointer Mr xT B1 3*53 2S5 WOC 8VVOrC HA4 mterrai P畤R%自e P毎它THDTmy：yp CopyBsc P-njDuTiny)are ava aoe o re 2y.3p.4i oaeof 1 o:eEir. 3Te 7inc0FF3cc 3。匚苗 3告：fQr re-asatau3 QfbWi PaeowatQ*. Cau

7、tion : Any -*ut3 are Dror otez sxc&ot for aoo-ve aonTiac set of Tass *. 28=256word 32个page需要5bit来表示,占用A13:9,即该page在块内的相对地址，即 page address a 25=32page （一个 block 有 32 个 page） Block的地址是山A14以上的bit来表示，例如512Mb的NAND,共4096block, 因此，需要12个bit来表示,即A25:14,如果是1Gbit的528byte/page的 NAND Flash,则 block address 用 A26:

8、14表示。 2 26-14+1）=8192blocks （总共有这些 block） 2 26-9+1 =226=page （总共有这些 pages） 其他诸如地址传递等与16位是一样的。可以参照8位的进行修改移用。 Figure 2. K9F2G08X0A Array Organization 128K Pages (=2.C48 Blocks) Column Address Coiumni Address Row Add ross Row Add r6S& Row Address (三)下面针对，页面为2Kbyte, IO数据为8位 iroo I/O 1 1/0 2 I/O 3 I/O 4

9、I/O 5 I/O 6 1/0 7 1st Cycte Ac A： A2 Aa As As A7 2nd Cycle As Am Aia A- L L L L 3rd 比2 A-3 Ar 恥 A-S A-? A-a AiS 4th Cycle A2G A21 4 A23 A25 A25 A27 5th Cycle A2B - L - L L NOTE : Co jmn Address : Stsa 为 Address ofRe尹 怡二 Lmustoe set to,*Lw/. Tra davg gror&3 any adddona ipjt ofcycas tnan reqj red. 2K

10、Page跟512page不冋的地方在于：512page对main area和spare area的读写是分开来 读写的，由命令来决左是写入或读入main area还是spare area,所以分为readl, read2模 式。而2k page对main area和spare area的读写是一起寻址的，没有命令来决怎是写入或 读入main area还是spare area.对于2K可以当成4个512byte来读，也可以当成一个2k 的page来读,寻址命令参考datasheet.入下图： 2K+64=2111colum n 211=2048 212=4096 而204821114096,所以

11、column地址也必须用12个bit表示。 2111是每个page的最后一个数值，所以他的地址为： A11-A0: 0000 1000 0011 1111 所以是 08H 第二列,3FH 第一列地址 Table 1. Command Sets Funetidrt Ut Cyclo 2rtd Cyel6 Aeedptdbld Comtnartd durine Busy Read OQh 3Qh Read for Copy Back OOh 35h Read ID 0h - Reset FFh - 0 Page Prog伯制 BOh 10h *Lva-Piane Page Program5* Mh

12、11h ftih10h Copy-Back Program B5h 10h ZsPlaz Cop-y-Baek Pr旳 &5h11h aih10h Block. Erase 6Qh DOh Kva-Pianci BQck Era&e 60h60h DOh Random Data lnputs, 85h - Random Data Output* 05h EOh Read Status： 70h 0 Read EDC Status21 7D- 0 NOTE: 1. Random DaisInputOjipjtcan dsexez-jtoj n a 2. Rsa3 EDC Stst a a*vs

13、on jy 3. Any commarxj Dstween 11h 3*d 81h 3 prooied excaot 70h axJ FFn. 4. KBF2GD8-R0A does not sup port Two -Plan e operati on. K9F2G0SX0A supports copy-back with EDC to rd cumulate bit errors To make EDC vaW, the page program operaton shouki be performed an either whoFe page(2H2byte) or sector(52S

14、byte). f4odifyimg the data of a sector by Random Data Input bafore CopyBack Program must bo performed for th whole seetor and is allowed only onee per eaeh seetor. Any partial modification smallorthan a sector corrupts th on*chip EDC codes A 2,112-byte pae js composed Qf sectors of 528-byte and each 526bytQ sector com posed of 512-t-yte mam area and 1-6-byte spl6 Sector C 1,024 - 1,535 G 2,080 - 2,095 4th 520-B/e Seo&f CT 1.536 -2.047 2066-2,111 64个p