硫酸铜填孔电镀理论

1、硫酸铜填孔电镀理论-有机物质成分,Organic additives Organic additive species Brightener/accelerator Carrier/suppressor Leveller,电镀反应 : ( 摘要) 可溶解性阳极,Function 1 Reduce the activation energy and increase Cu deposition rate Additive can be monitored by CVS using standard addition method or Hull Cell,Additive Chemistry,F

2、unction 2 The side chains on the additive molecule has a barrier for Cu+ to deposit onto the surface. The probability to fill in steps and vacancies on the surface increases,Additive Chemistry (Cont.,Function 3 The coverage of the additive on the surface enhanced nucleation and formation of randomly

3、 oriented grains. Allows the formation a microstructure with interlocking of randomly oriented grains,Additive Chemistry (Cont.,Decomposition of additive on Cu surface, such as anode,2S(-1) + 2e- 2S(-2) Cu Cu2+ + 2e,Occurred mainly during bath idling Air bubbling during idling can usually solve the

4、by-product formation issue,Control of additive content,By-product speeds up the Cu deposition at least 20 times,A bath dominated by the by-product gives columnar microstructure,Control of Additive content (Cont.,Additive 浓度对电镀效率的影响,硫酸铜填孔电镀 : Leveler dominate V.S no Leveler 系统比较,Mechanism of thin knee,Carrier #1,Brightener #1,leveler,Carrier #2,Brightener #2,Competitors,MicroFill,Via Fill deposition mode,Mechanism of viafilling,Normal,A