低内阻高品质MOS

EMSH0802BG

80V2.9mN-ChPowerMOSFET

FeaturesProductSummary

•Ultra-lowRDS(ON)

Parameter

Typ.Unit

•LowGateCharge

VDS

80V

•HighCurrentCapability

VGS(th)

2.8V

•100%UISTested,100%RgTested

ID(@VGS=10V)

144A

Applications2.9m

RDS(ON)(@VGS=10V)

•PowerManagermentinTelecom.,IndustrialAutomation,CE

•MotorDrivinginPowerTool,E‐vehicle,Robotics

•CurrentSwitchinginDC/DC&AC/DC(SR)Sub-systems

PDFN5x6

TopViewBottomView

TopView

PinConfiguration

D

1

8

YJ

2

3

7

6

G

4

5

S

Orderinginformation

DevicePackage#ofPinsTJ(°C)Media

Quantity(pcs)

EMSH0802BGPDFN5x68-55to15013-inchReel3000

AbsoluteMaximumRatings(@TA=25°Cunlessotherwisespecified)

ParameterSymbolValueUnit

Drain-to-SourceVoltageVDS80V

Gate-to-SourceVoltageVGS±20V

ContinuousDrain

Current

TC=25°C144

ID

TC=70°C115

A

PulsedDrainCurrentIDM500

AvalancheCurrentIAS73A

AvalancheEnergy(@L=0.1mH)EAS266mJ

PowerDissipation

TC=25°C139

PD

TC=70°C89

W

Junction&StorageTemperatureRangeTJ,TSTG-55to150°C

20

RDS(ON)vs.VGSGateCharge

10

15

ID=20A

8

VDS=40V

ID=20A

6

10

4

5

2

25°C

0

0

05101520

VGS(V)

010203040

Qg(nC)

EMSH0802BG

ElectricalCharacteristics(@TJ=25°Cunlessotherwisespecified)

ParameterSymbolConditionsMin.Typ.Max.Unit

STATICPARAMETERS

Drain-SourceBreakdownVoltageV(BR)DSSID=250A,VGS=0V80V

ZeroGateVoltageDrainCurrentIDSS

VDS=64V,VGS=0V1

TJ=55°C5

A

Gate-BodyLeakageCurrentIGSSVDS=0V,VGS=±20V±100nA

GateThresholdVoltageVGS(th)VDS=VGS,ID=250A2.02.84.0V

StaticDrain-SourceON-Resistance

RDS(ON)VGS=10V,ID=20A2.93.6m

ForwardTransconductancegFSVDS=5V,ID=20A78S

DiodeForwardVoltageVSDIS=1A,VGS=0V0.71.0V

DiodeContinuousCurrent

ISTC=25°C139A

DYNAMICPARAMETERS

InputCapacitance

Ciss2107pF

OutputCapacitance

CossVGS=0V,VDS=40V,f=1MHz1624pF

ReverseTransferCapacitance

Crss19pF

GateResistanceRgVGS=0V,VDS=0V,f=1MHz2.0

SWITCHINGPARAMETERS

TotalGateCharge(@VGS=10V)Qg35.8nC

TotalGateCharge(@VGS=6V)

GateSourceCharge

QgVGS=0to10V,VDS=40V,24.7nC

Qgs7.7nC

ID=20A

GateDrainCharge

Qgd12.4nC

Turn-OnDelayTime

tD(on)10.4ns

Turn-OnRiseTime

Turn-OffDelayTime

trVGS=10V,VDS=40V14.5ns

RL=2,RGEN=6

tD(off)31.5ns

Turn-OffFallTimetf20.3ns

BodyDiodeReverseRecoveryTimetrrIF=20A,dIF/dt=100A/s62ns

BodyDiodeReverseRecoveryCharge

QrrIF=20A,dIF/dt=100A/s126nC

ThermalPerformance

ParameterSymbolTyp.Max.Unit

ThermalResistance,Junction-to-AmbientRJA5065°C/W

ThermalResistance,Junction-to-CaseRJC0.70.9°C/W

EMSH0802BG

TypicalElectrical&ThermalCharacteristics

30

100

80

10V

6V

5.5V

24

VDS=5V

VGS=5.0V

18

60

25°C

125°C

12

40

VGS=4.5V

20

6VGS=4.2V

0

000.61.21.82.43

23456

VDS(V)

VGS(V)

Figure1:SaturationCharacteristics

Figure2:TransferCharacteristics

5

2.5

4

2

3

VGS=10V

1.5

2

1

VGS=10V

ID=20A

1

0.5

0

04080120160

0

-100-50050100150200

ID(A)

Temperature(C)

Figure3:RDS(ON)vs.DrainCurrent

Figure4:RDS(ON)vs.JunctionTemperature

1010000

Ciss

1

1000

Coss

125°C25°C

0.1100

0.01

10

Crss

0.001

0.00.20.40.60.81.01.2

1

020406080

VSD(V)

VDS(V)

Figure5:Body-DiodeCharacteristicsFigure6:CapacitanceCharacteristics

EMSH0802BG

TypicalElectrical&ThermalCharacteristics

160

150

120

120

90

80

60

40

30

0

0

0306090120150

0306090120150

TCASE(C)

TCASE(C)

Figure7:CurrentDe-ratingFigure8:PowerDe-rating

1000.0

1600

Limitedby

RDS(ON)

1s

100.0

1200

10s

80010.0

100s

1ms

400

1.0

TJ_Max=150°C

TC=25°C

10ms

DC

0.1

0.11101001000

0

0.00010.0010.010.11101001000

VDS(V)

PulseWidth(s)

Figure9:MaximumSafeOperatingArea

Figure10:SinglePulsePowerRating,Junction-to-Case

10

DutyCycle=Ton/T

PeakTJ=TC+PDxZJCxRJCRJC=0.7°C/W

1

Duty=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse0.1

0.01

0.000010.00010.0010.010.1110

PulseWidth(s)

Figure11:NormalizedMaximumTransientThermalImpedance

EMSH0802BG

PDFN5x6PackageInformation(Allunitsinmm)

PackageOutline

D1c

8558

L1

1e4A41

b

TopViewSideViewBottomView

D

FrontView

NOTES:

1.DimensionandtoleranceperASMEY14.5M,1994.

2.Alldimensionsinmillimeter(angleindegree).

3.DimensionsDandE1donotincludemoldflashprotrusionsorgateburrs.

DIM.MILLIMET