低内阻P-MOS大电流

YJ060P03

140A30VP-channelEnhancementModePowerMOSFET

1Description

TheseP-channelenhancementmodepowermosfetsused

advancedtrenchtechnologydesign,providedexcellent

2

D

VDSS=-30V

Rdsonandlowgatecharge.WhichaccordswiththeRoHS

standard.

G

1

RDS(on)(TYP)=4.5mΩ

3

SID=-140A

2Features

●Fastswitching

●Lowonresistance

●Lowgatecharge

●Lowreversetransfercapacitances

●100%singlepulseavalancheenergytest

●100%ΔVDStest

TO-220CTO-220FTO-262

3Applications

●Powerswitchingapplications

●Invertermanagementsystem

●Powertools

●AutomotiveelectronicsTO-263TO-252BTO-251B

4ElectricalCharacteristics

4.1AbsoluteMaximumRatings(Tc=25℃,unlessotherwisenoted)

Rating

ParameterSymbolYJ060PYJ060P03IUnits

YJ060P03BYJ060P03

YJ060P03EYJ060P03D03F

Drian-to-SourceVoltageVDSS-30V

Gate-to-SourceVoltageVGSS±20V

ContinuousDrainCurrent

TC=25℃-140A

ID

TC=100℃-98A

PulsedDrainCurrent(1)IDM-560A

SinglePulseAvalancheEnergy(4)EAS590mJ

AvalancheCurrent(4)IAS-48A

PowerDissipation

Ta=25℃Ptot2222W

TC=25℃Pto

IsolationVoltageVISO2500V

JunctionTemperatureRangeTj-55～150℃

StorageTemperatureRangeTstg-55～150℃

4.2ThermalCharacteristics

ParameterSymbol

RatingUnit

YJ060P03IYJ060P03BYJ060P

YJ060Ps

03YJ060P03EYJ060P03D03F

ThermalResistance,JunctiontoCase-sinkRthJC0.930.930.933.79℃/W

ThermalResistance,JunctiontoAmbientRthJA62.562.562.562.5℃/W

YJ060P03

TypMax

OffCharacteristics

Drain-to-Source

BreakdownVoltage

BVDSSID=-250μA,VGS=0V-30----V

Drain-to-SourceLeakage

Current

IDSS

VDS=-30V,VGS=0V,TC=25℃-----1μA

VDS=-30V,VGS=0V,TC=125℃-----100μA

Gate-to-SourceLeakage

Current

OnCharacteristics

IGSSVGS=±20V,VDS=0V----±100nA

GateThresholdVoltageVGS(th)VDS=VGS,ID=-250μA-1-1.5-2V

Drain-to-Sourceon-state

Resistance

RDS(on)VGS=-10V,ID=-40A--4.55.4mΩ

DynamicCharacteristics

InputCapacitanceCiss--6979--

VGS=0V,

OutputCapacitanceCoss--828--

VDS=-15V,

ReverseTransfer

f=1.0MHz

Crss--535--

Capacitance

pF

GateResisitanceRGVDD=0V,VGS=0V,F=1MHz--3.9--Ω

SwitchingCharacteristics

Turn-onDelayTimetd(on)Id=-40A;

--42--

Turn-onRiseTimetrVds=-15V;--269--

Vgs=-10V;

Turn-offDelayTimetd(off)--442--

Rg=25Ω

Turn-offFallTimetf--303--

nS

TotalGateChargeQg--127--

Vgs=-10V;

Gate-to-SourceChargeQgs--24--

Vds=-15V;

Gate-to-Drain(“Miller”)

Id=-40A

Qgd--22--

Charge

Drain-SourceDiodeCharacteristics

nC

DiodeForwardVoltage(3)VSDVGS=0V,IS=-40A-----1.3V

DiodeForwardCurrentIS-----140A

ReverseRecoveryTime(3)trr--27.8--nS

TJ=25℃,IF=-40A,

ReverseRecovery

QrrdIF/dt=100A/μS,VGS=0V--12.8--nC

Charge(3)

Notes：

1:Repetitiverating,pulsewidthlimitedbymaximumjunctiontemperature.

2:SurfacemountedonFR4Board,t≤10sec.

3:Pulsewidth≤300μs,dutycycle≤2%.

4:L=0.5mH,ID=-48A,VDD=-24V,VGATE=-30V,StartTJ=25℃.

YJ060P03

5Typicalcharacteristicsdiagrams

Figure1OutputCharacteristicsFigure2TransferCharacteristics

Figure3.RdsonvsTemperature

YJ060P03

Fig4.GateChargeFig5.Source-DrainDiodeForward

Figure6.CapacitanceCharacteristicsFigure7.SafeOperationArea

YJ060P03

Figure8.IDCurrentDer