专业外语期末复习-2015

期末复习专业外语考试题型一、汉译英（20分）10个词，每个词2分二、英译汉（20分）10个词，每个词2分三、翻译句子（40分）10个句子，每个句子4分四、翻译（20分）一整段或者几个句子考试注意事项一、考试时间：2个小时

7月11日9：00-11：00经信F2二、不允许带词典（包括电子词典）三、手机关机（用手表看时间）四、不允许上厕所五、交卷要在一个小时十分钟之后！！！复习题一、掌握（给出汉语可以写成英文）semiconductor：半导体photoconductivity：光电导性（率）rectification：整流intrinsicproperties：本征特性Halleffect：霍尔效应currentcarriers：载流子carriermobility：载流子迁移率silicon：硅（Si）germanium：锗（Ge）solarcell

：太阳电池一、掌握（给出汉语可以写成英文）alkali

halide：碱金属卤化物transistor：晶体管solid-statelaser

：固体激光器opticalfiber：光纤quantummechanics：量子力学potentialbarrier：势垒，位垒periodiclattice：周期点阵activationenergy：激活能electron-holepairs：电子、空穴对dislocation：位错一、掌握（给出汉语可以写成英文）ionimplantation：离子注入fieldeffect-transistor：场效应晶体管wafer：晶片Wetchemicaletching：湿法化学刻蚀diffractioneffect：衍射效应birefringent：双折射的indexofrefraction：折射率focallength：焦距

donor：施主acceptor：受主一、掌握（给出汉语可以写成英文）interferencecontrast：干涉相称valenceelectron：价电子Liquidphaseepitaxy(LPE)：液相外延Fieldeffect-transistor(FET)：场效应晶体管Integratedcircuit(IC)：集成电路Light-emittingdiode(LED)：发光二极管Metal-Oxide-Semicondutor(MOS)：金属氧化物半导体；physicalvapordeposition(PVD)：物理气相沉积；chemicalvapordeposition(CVD)：化学气相沉积numericalapertures(NA)：数值孔径negativetemperaturecoefficientofresistance:电阻的负温度系数silversulphidel:硫化银poly-crystallineingots:多晶块titanium:钛（Ti）zirconium：锆（Zr）tellurium：碲（Te)leadsulphide:硫化铅ironpyrites：黄铁矿selenium：硒（Se）copper：铜二、认识（给出英语能翻译成汉语）Transmissionpolarizedlightmicroscopy：透射偏光显微术wavelength：波长radioreceivers：无线射频接收器、无线电接收机galena：方铅矿photocell：光电管、光电池copperoxide：氧化铜crystaldetector：晶体检波器vacuumtube：真空管infrareddetector：红外探测器fieldsofforce：力场二、认识（给出英语能翻译成汉语）N-folddegenerate：N度简并oscillator：振子Pauliprinciple：泡利不相容原理excitedstates：激发态potentialbarrier：势垒、位垒magnesium：镁filledband：满带emptyband：空带thermallyexcited：热激发intrinsicconduction：本征导电二、认识（给出英语能翻译成汉语）二、认识（给出英语能翻译成汉语）X-raytopography：X射线形貌学OpticalMicroscopy：光学显微术（镜）stackingfault：层错Etchant：蚀刻剂crystallography：结晶学polishingetch：抛光腐蚀selectiveetch：选择腐蚀avalanche：雪崩anodic：阳极的cathodic：阴极的infraredspectroscopy：红外光谱学二、认识（给出英语能翻译成汉语）Cr：chromium：铬depthoffield：景深，视场深度resolution：分辨率

compoundmicroscope：复显微镜magnification：放大倍数（倍率）transmittedlightmicroscope：透射式光学显微镜reflectionmicroscopy：反射显微技术

Czochralskigrowth：提（直）拉法生长

polarize：偏振片、起偏器prism：棱镜三、句子1、Itis,nevertheless,ahightributetotheskillandcareofmanyexperimentersthat,inspiteofthis,semiconductorshadbeenrecognizedasadistinctclassofsubstancesandtheirmainpropertiesappreciatedlongbeforeacomprehensivetheorywasavailabletoaccountforthem.P12、Theseeffectsarenowknowntobeduetooxidefilmsoractualgapsseparatingtheindividualcrystalsbutledtothemetalstitaniumandzirconiumoncebeinglistedassemiconductors.P13、Itmustbeadmitted,however,thatnoinfalliblecriterionwasavailabletillthequantumtheoryofsolidsgaveanunderstandingofthereasonsforthevariouspropertiesobserved.P14、AreviewofthisearlyworkhasbeengivenbyK.Lark-Horowitztogetherwithaveryextensivebibliographycontainingover350references.EarlierreviewsbyB'Guddenalsodealextensivelywiththisphaseanddiscussinsomedetailtheproblemsofidentifyingsemiconductors.

P25、Thelatter,whichisgenerallyknownasthecarriermobility,andwhichweshalldefinemorepreciselylatergenerallytendstodecreaseasthetemperatureisraised,especiallyatthehighertemperatures,andthisaccountsforthedecreaseinconductivityofmetalswithincreasingtemperature.

P36、Thesubstancesconcernedweremainlymetallicoxidesandsulphidesandthe‘defect’semiconductorswerethosewithametalliccontentlessthanthatcorrespondingtostoichiometriccomposition,i.c.oxidizedcompounds.

P47、Theimportanceofthisworkwasinshowingthevitalpartplayedbysmalldeviationsfromstoichiometriccompositionindeterminingthepropertiesofcompoundsemiconductors.

P48、Althoughtheyarenotstrictlysemiconductorsbutinsulators,mentionmustbemadeofthelargeamountofresearchcarriedoutbyR.W.Pohlandhiscollaboratorsonthealkalihalides,sincethishelpedgreatlytoclarifymanyofthepropertiesofsemiconductors.P49、Muchoftheuncertaintyoftheearlyworkonsemiconductorsarosethroughafailuretodifferentiatebetweeneffects,whichariseinthebulkofthematerial,andthose,whicharecharacteristicofthesurfaceoroftheinterfacebetweentwodifferentmaterials.P510、Theuseofsinglecrystalshasenablednotonlytheseparationofthebulkandsurfacepropertiesbuthasalsoenabledthesurfaceandtheinterfacebetweentwotypesofsemiconductor,orbetweenasemiconductorandametal,tobestudiedinmuchgreaterdetail.P511、Morerecentlythestudyofamorphoussemiconductorshasledtoafullerappreciationofthoseproperties,suchashighcarriermobility,thatdependprincipallyonthequalityofthecrystalsbeingstudiedandthosemorefundamentalpropertieswhichdonotdependonlong-rangeorder.P512、Thephotoconductivepropertiesofselenium,andofcopperoxide,havebeenusedtoprovideexposuremetersforphotographyandphotocells,whichareusedinthefilmindustryfortransformingthemarkingsonthesoundtrackintoelectriccurrentsforimplicationandreproductionbyloud-speakers.P513、Thediscoverythatafinewire,or‘cat’swhisker,incontactwithacrystalofsemiconductingmaterialmadeanexcellentrectifierforhigh-frequencycurrentsledtoagreatincreaseinthesensitivityofradioreceivers,andthistypeofdevicewaswidelyusedintheearlydaysofbroadcasting.P614、Themodernsuccessortothetransistoristheintegratedcircuit(IC.)inwhichmanytransistorsandtheirassociatedcomponentssuchasresistors,capacitorsetc.areproducedbycontrolleddiffusionofimpuritiesintoasmall‘chip’ofsilicon.P715、Heretheseforcesaresupposedtoattracttheelectronstronglyifitmovesoutsidetheboundary,andinthesimplestformofthetheoryitisassumedthattheysetupanimpenetrablepotentialbarrierwhichholdstheelectronsinthesolid.

P816、InSummerfield’stheory,theallowedenergylevelsforthevalenceelectronsofacrystalofmacroscopicdimensionslieveryclosetogetherandtheirvaluesextendfromnearlythebottomofthepotentialtroughinwhichtheelectronsmovetoindefinitelyhighvalues.

P917、IfnowwehaveNatomsinacrystal,andweassumethecrystaltobeexpandedsothatthelatticespacingbecomesverygreat,thentheallowedenergylevelswillbejusttheatomicenergylevelswhich,forthemoment,weshallassumetobenon-degenerate,i.e.eachhasaseparateenergy.

P1118、Thisnotonlyexplainswhy‘inner’electronsdonotcontributetoconductionbutitgaveWilsonthecluetotheessentialdeferencebetweenmetalsontheonehandandinsulatorsandsemiconductorsontheother.P1219、Mostofthesubstanceswithwhichweshallbeconcernedhavesuchastructure,butmaynotalwaysconsistoflargesinglecrystalsbutofaggregatesofverysmallcrystalswithrandomorientation.

P1320、Thenumberofexcitedelectronswouldincreasewithtemperatureinamannergovernedbyaprocesshavingan‘activationenergy’,oftheorderofΔEandweshouldexpectarapidincreaseoftheconductivitywithtemperature.P1421、AsweshallalsoseelatertheeffectofverysmallamountsofimpuritycanhaveamarkedeffectonthisactivationenergysothatmaterialswhichhaveconsiderablygreatervaluesofAEmaybehaveassemiconductorswhentheycontaincertain‘active’impurities.P1422、IfweassumethatthevariationwithTofthemobilityofelectronsandholesinanelectricfieldissmallcomparedwiththevariationintheexponentialfactorin(4)thenwehavefortheconductivityσ,whichisthensimplyproportionaltothenumberofcarriers,avariationoftheform.

P1523、Inmanyinstances,itisfoundthattheenergyrequiredtoexciteanelectronintotheconductionbandfromadonorlevelissosmallthattheelectronsfromall,theavailabledonorlevelsareexcitedandareintheconductionbandatroomtemperature.

P1624、Hence,forasemiconductorinthisconditiontheresistancewillincreasewithincreasingtemperature,tillatemperatureisreachedatwhichtheintrinsicelectronsbegintopredominate,whenitwillbegintofallexponentiallyinthemanneroncethoughttobecharacteristicifsemiconductors.

P1625、Whenlightfrequencyishighenoughsothataquantumabsorbedbyavalenceelectronhassufficientenergytoraiseitfromthetopofthefullbandtotheconductionband,extracarriersarecreatedandtheseleadtoincreasedconductivity.P1726、Itwillbeclearfromtheabovecalculationthatifgermaniumistobeintrinsicatroomtemperatureitmustbefreefromimpuritiesgivinglevelsneartheconductionbandtobetterthanonepartin109.

P1827、Itisanticipatedthatthereaderwillhavea"hands-on"involvementwithetchingandopticalmicroscopy,butitisexpectedthatwithX-raytopography,theappropriatespecialistwillperformtheworkandhelpinterprettheresults.

P1828、Itturnsout,however,thattheminoritycarriersarenevertheless,ofgreatimportance,asmanyelectronicprocessesinsemiconductortechnologyarecontrolledbytheminoritycarriers,thedensityofwhich,beingsmall,maybemorereadilyvaried.

P1829、Onetoonecorrelationsbetweendislocationsandemittertocollectorshortsinbipolartransistors,aswellasavalanchesitesinphotodetectorshavebeenmade,whereasprocessinducedstackingfaultsareknowntoreducethestoragetimeinMOSmemorydevices.P1930、Ifdefectcharacterizationisworthyofaphilosophy,thenitmustbe"donotuseoverkill",orinotherwordsusethesimplesttechniq