SiC器件欧姆接触的理论和实验研究

SiC器件欧姆接触的理论和实验研究一、本文概述Overviewofthisarticle随着半导体技术的不断进步，碳化硅（SiC）作为一种优秀的宽禁带半导体材料，在高温、高频、高功率电子器件领域展现出了巨大的应用潜力。然而，要实现SiC器件的高效、稳定运行，欧姆接触的设计与实现至关重要。本文旨在全面探讨SiC器件欧姆接触的理论基础和实验研究，旨在通过深入的理论分析和实验结果，为SiC器件的欧姆接触优化提供理论依据和技术指导。Withthecontinuousprogressofsemiconductortechnology,siliconcarbide(SiC),asanexcellentwidebandgapsemiconductormaterial,hasshownenormousapplicationpotentialinthefieldsofhightemperature,highfrequency,andhigh-powerelectronicdevices.However,toachieveefficientandstableoperationofSiCdevices,thedesignandimplementationofOhmiccontactsarecrucial.ThisarticleaimstocomprehensivelyexplorethetheoreticalbasisandexperimentalresearchofOhmicContactinSiCdevices,andprovidetheoreticalbasisandtechnicalguidanceforoptimizingOhmicContactinSiCdevicesthroughin-depththeoreticalanalysisandexperimentalresults.文章首先将对SiC材料的物理特性进行简要介绍，包括其晶体结构、能带结构、电子输运特性等，为后续欧姆接触的理论分析奠定基础。接着，文章将详细阐述欧姆接触的基本原理和关键参数，包括接触电阻、势垒高度、载流子浓度等，并分析这些参数对SiC器件性能的影响。ThearticlewillfirstprovideabriefintroductiontothephysicalpropertiesofSiCmaterials,includingtheircrystalstructure,bandstructure,electrontransportcharacteristics,etc.,layingthefoundationforsubsequenttheoreticalanalysisofOhmiccontact.Next,thearticlewillelaborateonthebasicprincipleandkeyparametersofOhmiccontact,includingcontactresistance,barrierheight,carrierconcentration,etc.,andanalyzetheimpactoftheseparametersontheperformanceofSiCdevices.在实验研究方面，本文将介绍欧姆接触制备的工艺流程，包括金属选择、表面处理、退火条件等，并通过实验测试和分析，探究不同工艺参数对欧姆接触性能的影响规律。文章还将通过对比实验和模拟计算结果，验证理论分析的准确性和可靠性。Intermsofexperimentalresearch,thisarticlewillintroducetheprocessflowofOhmiccontactpreparation,includingmetalselection,surfacetreatment,annealingconditions,etc.,andexploretheinfluenceofdifferentprocessparametersonOhmiccontactperformancethroughexperimentaltestingandanalysis.Thearticlewillalsoverifytheaccuracyandreliabilityoftheoreticalanalysisbycomparingexperimentalandsimulationresults.文章将总结SiC器件欧姆接触的理论和实验研究成果，并提出未来研究方向和潜在应用前景。通过本文的研究，旨在为SiC器件的欧姆接触优化提供理论支持和实践指导，推动SiC器件在电力电子、微波毫米波通信等领域的应用发展。ThearticlewillsummarizethetheoreticalandexperimentalresearchresultsofOhmiccontactinSiCdevices,andproposefutureresearchdirectionsandpotentialapplicationprospects.Throughthisstudy,theaimistoprovidetheoreticalsupportandpracticalguidancefortheoptimizationofOhmiccontactsinSiCdevices,andtopromotetheapplicationanddevelopmentofSiCdevicesinfieldssuchaspowerelectronics,microwaveandmillimeterwavecommunication.二、SiC欧姆接触的基本理论TheBasicTheoryofSiCOhmicContactSiC作为一种宽禁带半导体材料，具有高硬度、高热导率、高临界击穿电场和高饱和电子迁移率等特性，这使得SiC在电力电子、高频和高温电子器件等领域具有广泛的应用前景。然而，要实现SiC器件的高效运行，欧姆接触的形成至关重要。欧姆接触是指金属与半导体之间形成的低阻抗接触，在这种接触中，电流通过接触界面时不会产生显著的电压降，从而保证电流能够顺畅地流过。SiC,asawidebandgapsemiconductormaterial,hascharacteristicssuchashighhardness,highthermalconductivity,highcriticalbreakdownelectricfield,andhighsaturationelectronmobility.ThismakesSiChavebroadapplicationprospectsinfieldssuchaspowerelectronics,high-frequency,andhigh-temperatureelectronicdevices.However,toachieveefficientoperationofSiCdevices,theformationofOhmiccontactsiscrucial.Ohmiccontactreferstothelowimpedancecontactformedbetweenmetalsandsemiconductors.Inthiscontact,thereisnosignificantvoltagedropwhenthecurrentpassesthroughthecontactinterface,ensuringthatthecurrentcanflowsmoothly.为了实现SiC的欧姆接触，首先需要理解金属与半导体之间的接触机制。当金属与半导体接触时，会在界面处形成一层薄薄的电荷层，这称为肖特基势垒。肖特基势垒的存在会阻碍电流的流动，因此需要采取一些方法来降低或消除势垒。一种常见的方法是使用重掺杂的半导体来减小势垒高度。还可以通过选择功函数与SiC相近的金属来降低势垒。InordertoachieveOhmiccontactofSiC,itisfirstnecessarytounderstandthecontactmechanismbetweenmetalsandsemiconductors.Whenametalcomesintocontactwithasemiconductor,athinlayerofchargeisformedattheinterface,whichiscalledaSchottkybarrier.TheexistenceofSchottkybarrierscanhindertheflowofcurrent,sosomemethodsneedtobetakentoreduceoreliminatethebarriers.Acommonmethodistouseheavilydopedsemiconductorstoreducethebarrierheight.ThepotentialbarriercanalsobeloweredbyselectingametalwithaworkfunctionsimilartoSiC.除了势垒高度外，接触电阻也是衡量欧姆接触性能的重要指标。接触电阻的大小与金属与半导体之间的界面状态、材料性质以及制备工艺等因素密切相关。为了减小接触电阻，通常需要对接触界面进行特殊处理，如使用合金化技术、退火处理等。Inadditiontobarrierheight,contactresistanceisalsoanimportantindicatorformeasuringOhmiccontactperformance.Themagnitudeofcontactresistanceiscloselyrelatedtofactorssuchastheinterfacestate,materialproperties,andpreparationprocessbetweenmetalsandsemiconductors.Inordertoreducecontactresistance,specialtreatmentofthecontactinterfaceisusuallyrequired,suchasusingalloyingtechnology,annealingtreatment,etc.在实验研究中，常用的制备SiC欧姆接触的方法包括金属蒸发、溅射、电镀等。通过这些方法，可以在SiC表面形成一层均匀的金属薄膜。随后，通过退火处理，使金属与SiC之间发生化学反应，形成稳定的欧姆接触。Inexperimentalresearch,commonlyusedmethodsforpreparingSiCohmiccontactsincludemetalevaporation,sputtering,electroplating,etc.Throughthesemethods,auniformmetalfilmcanbeformedonthesurfaceofSiC.Subsequently,throughannealingtreatment,achemicalreactionoccursbetweenthemetalandSiC,formingastableOhmiccontact.实现SiC的欧姆接触需要深入理解金属与半导体之间的接触机制，并采取合适的制备工艺和材料选择。通过不断优化制备方法和提高接触性能，有望推动SiC器件在实际应用中的广泛推广。ToachieveOhmiccontactofSiC,itisnecessarytohaveadeepunderstandingofthecontactmechanismbetweenmetalsandsemiconductors,andtoadoptappropriatepreparationprocessesandmaterialselection.Bycontinuouslyoptimizingpreparationmethodsandimprovingcontactperformance,itisexpectedtopromotethewidespreadapplicationofSiCdevicesinpracticalapplications.三、SiC欧姆接触材料的选择与设计SelectionandDesignofSiCOhmicContactMaterials欧姆接触是指金属与半导体之间在接触时，形成的电阻很小，使得电流可以顺畅地从金属流入半导体中，而不会在接触界面产生显著的电压降。对于SiC器件而言，欧姆接触的设计和优化是实现高性能、高可靠性器件的关键。因此，在SiC器件的制造过程中，欧姆接触材料的选择与设计显得尤为重要。Ohmiccontactreferstothesmallresistanceformedbetweenmetalsandsemiconductorsduringcontact,allowingcurrenttoflowsmoothlyfromthemetalintothesemiconductorwithoutcausingasignificantvoltagedropatthecontactinterface.ForSiCdevices,thedesignandoptimizationofOhmiccontactsarekeytoachievinghigh-performanceandhighreliabilitydevices.Therefore,theselectionanddesignofohmiccontactmaterialsareparticularlyimportantinthemanufacturingprocessofSiCdevices.在选择欧姆接触材料时，我们需要考虑材料的导电性、热稳定性、化学稳定性以及与SiC材料的相容性等因素。通常，金属如Ti、Al、Ni、Au等被广泛应用于SiC的欧姆接触。其中，Ti因其与SiC反应生成的TiC具有较低的电阻率和良好的稳定性，成为最常用的欧姆接触材料之一。为了进一步提高欧姆接触的性能，通常还会采用多层金属结构，如Ti/Al/Ni/Au等，通过调整各层的厚度和顺序，达到最佳的欧姆接触效果。WhenselectingOhmiccontactmaterials,weneedtoconsiderfactorssuchasconductivity,thermalstability,chemicalstability,andcompatibilitywithSiCmaterials.Usually,metalssuchasTi,Al,Ni,Au,etc.arewidelyusedinOhmiccontactsofSiC.Amongthem,TihasbecomeoneofthemostcommonlyusedohmiccontactmaterialsduetoitslowelectricalresistivityandgoodstabilitygeneratedbyitsreactionwithSiC.InordertofurtherimprovetheperformanceofOhmiccontact,multi-layermetalstructuressuchasTi/Al/Ni/Auareusuallyused,andtheoptimalOhmiccontacteffectisachievedbyadjustingthethicknessandorderofeachlayer.在欧姆接触的设计方面，我们需要考虑接触面积、接触压力、接触界面的微观结构等因素。通过优化接触面积和接触压力，可以降低接触电阻，提高电流传输效率。同时，通过控制接触界面的微观结构，如晶粒大小、晶界分布等，可以改善欧姆接触的稳定性。InthedesignofOhmiccontacts,weneedtoconsiderfactorssuchascontactarea,contactpressure,andthemicrostructureofthecontactinterface.Byoptimizingthecontactareaandcontactpressure,thecontactresistancecanbereducedandthecurrenttransmissionefficiencycanbeimproved.Meanwhile,bycontrollingthemicrostructureofthecontactinterface,suchasgrainsizeandgrainboundarydistribution,thestabilityofOhmiccontactcanbeimproved.为了获得良好的欧姆接触效果，还需要对欧姆接触进行退火处理。退火过程可以促进金属与SiC之间的反应，生成稳定的接触界面，从而降低接触电阻。退火还可以改善金属内部的微观结构，提高金属的导电性和热稳定性。InordertoachievegoodOhmiccontacteffect,itisalsonecessarytoannealtheOhmiccontact.TheannealingprocesscanpromotethereactionbetweenthemetalandSiC,generateastablecontactinterface,andthusreducethecontactresistance.Annealingcanalsoimprovethemicrostructureinsidemetals,enhancetheirconductivityandthermalstability.SiC欧姆接触材料的选择与设计是SiC器件制造过程中的重要环节。通过合理选择接触材料和优化接触设计，可以实现低电阻、高稳定性、高可靠性的欧姆接触，为SiC器件的高性能应用奠定坚实基础。TheselectionanddesignofSiCohmiccontactmaterialsareimportantlinksinthemanufacturingprocessofSiCdevices.Byselectingappropriatecontactmaterialsandoptimizingcontactdesign,lowresistance,highstability,andhighreliabilityOhmiccontactscanbeachieved,layingasolidfoundationforthehigh-performanceapplicationofSiCdevices.四、SiC欧姆接触的制备工艺PreparationprocessofSiCOhmicContact制备高质量的SiC欧姆接触是SiC器件制造过程中的重要环节。欧姆接触是指金属与半导体之间的接触电阻远小于半导体本身的电阻，使得电流通过接触时不会产生显著的压降。在SiC器件中，欧姆接触的性能直接影响到器件的工作效率和可靠性。Preparinghigh-qualitySiCohmiccontactsisanimportantstepinthemanufacturingprocessofSiCdevices.Ohmiccontactreferstothecontactresistancebetweenmetalsandsemiconductorsbeingmuchlowerthantheresistanceofthesemiconductoritself,sothatthereisnosignificantvoltagedropwhencurrentpassesthroughthecontact.InSiCdevices,theperformanceofOhmiccontactdirectlyaffectstheefficiencyandreliabilityofthedevice.SiC欧姆接触的制备工艺主要包括金属选择、接触结构设计、退火处理以及表面处理等步骤。金属选择是欧姆接触制备的关键，常用的金属包括Ti、Al、Ni、Mo等，它们能够与SiC形成低阻抗的欧姆接触。接触结构设计需考虑金属与SiC的接触面积、接触压力和接触稳定性等因素，以确保电流均匀分布并降低接触电阻。ThepreparationprocessofSiCohmiccontactsmainlyincludesstepssuchasmetalselection,contactstructuredesign,annealingtreatment,andsurfacetreatment.MetalselectionisthekeytopreparingOhmiccontacts,andcommonlyusedmetalsincludeTi,Al,Ni,Mo,etc.,whichcanformlowimpedanceOhmiccontactswithSiC.Thedesignofthecontactstructureneedstoconsiderfactorssuchasthecontactarea,contactpressure,andcontactstabilitybetweenthemetalandSiCtoensureuniformcurrentdistributionandreducecontactresistance.退火处理是SiC欧姆接触制备过程中的重要环节。通过退火，能够促进金属与SiC之间的化学反应，形成稳定的欧姆接触层。退火温度和时间的选择需根据具体的金属材料和SiC类型来确定，以确保获得最佳的欧姆接触性能。AnnealingtreatmentisanimportantstepinthepreparationprocessofSiCohmiccontacts.AnnealingcanpromotethechemicalreactionbetweenmetalandSiC,formingastableOhmiccontactlayer.TheselectionofannealingtemperatureandtimeshouldbebasedonthespecificmetalmaterialandSiCtypetoensureoptimalOhmiccontactperformance.表面处理是SiC欧姆接触制备的最后一步，主要目的是去除SiC表面的氧化物和污染物，提高金属与SiC的接触质量。常用的表面处理方法包括化学清洗、机械抛光和等离子清洗等。SurfacetreatmentisthefinalstepinthepreparationofSiCohmiccontact,withthemainpurposeofremovingoxidesandpollutantsfromthesurfaceofSiCandimprovingthecontactqualitybetweenmetalandSiC.Commonsurfacetreatmentmethodsincludechemicalcleaning,mechanicalpolishing,andplasmacleaning.在SiC欧姆接触的制备过程中，还需注意控制工艺参数和操作条件，以避免产生不良接触和界面反应。随着SiC材料和器件的不断发展，欧姆接触的制备工艺也在不断优化和改进，以适应更高的性能需求和更广泛的应用场景。InthepreparationprocessofSiCohmiccontact,attentionshouldalsobepaidtocontrollingprocessparametersandoperatingconditionstoavoidadversecontactandinterfacereactions.WiththecontinuousdevelopmentofSiCmaterialsanddevices,thepreparationprocessofOhmiccontactsisalsobeingoptimizedandimprovedtomeethigherperformancerequirementsandawiderrangeofapplicationscenarios.SiC欧姆接触的制备工艺涉及金属选择、接触结构设计、退火处理和表面处理等多个步骤。通过合理的工艺设计和参数控制，可以制备出高性能的SiC欧姆接触，为SiC器件的可靠运行提供有力保障。ThepreparationprocessofSiCohmiccontactsinvolvesmultiplestepssuchasmetalselection,contactstructuredesign,annealingtreatment,andsurfacetreatment.Throughreasonableprocessdesignandparametercontrol,high-performanceSiCohmiccontactscanbeprepared,providingstrongguaranteesforthereliableoperationofSiCdevices.五、SiC欧姆接触的实验研究ExperimentalStudyonSiCOhmicContactSiC作为一种具有优异物理和化学性能的宽禁带半导体材料，在电力电子、高温、高频和高功率电子器件等领域具有广泛的应用前景。然而，实现低电阻、高稳定性的欧姆接触一直是SiC器件研究和应用中的关键挑战。因此，本章节将重点介绍SiC欧姆接触的实验研究，旨在通过理论分析和实验验证，揭示欧姆接触的形成机制，优化接触性能，为SiC器件的实用化提供有力支持。SiC,asawidebandgapsemiconductormaterialwithexcellentphysicalandchemicalproperties,hasbroadapplicationprospectsinfieldssuchaspowerelectronics,hightemperature,highfrequency,andhigh-powerelectronicdevices.However,achievinglowresistanceandhighstabilityOhmiccontactshasalwaysbeenakeychallengeintheresearchandapplicationofSiCdevices.Therefore,thischapterwillfocusontheexperimentalresearchofSiCohmiccontacts,aimingtorevealtheformationmechanismofohmiccontactsthroughtheoreticalanalysisandexperimentalverification,optimizecontactperformance,andprovidestrongsupportforthepracticalityofSiCdevices.在实验研究中，我们采用了多种表征手段，包括射线光电子能谱（PS）、扫描电子显微镜（SEM）、原子力显微镜（AFM）以及四探针测试技术等，对欧姆接触界面进行了深入的微观结构和电学性能分析。通过PS分析，我们研究了接触金属与SiC之间的界面化学反应，揭示了金属元素在界面处的扩散和化合状态，为理解欧姆接触的形成机制提供了重要信息。利用SEM和AFM观察了接触界面的微观形貌，发现金属与SiC之间的接触紧密、界面清晰，没有明显的缺陷和杂质。这表明我们通过优化制备工艺，成功实现了高质量的欧姆接触。Intheexperimentalresearch,weusedvariouscharacterizationmethods,includingX-rayphotoelectronspectroscopy(PS),scanningelectronmicroscopy(SEM),atomicforcemicroscopy(AFM),andfourprobetestingtechniques,toconductin-depthanalysisofthemicrostructureandelectricalpropertiesoftheOhmiccontactinterface.ThroughPSanalysis,weinvestigatedtheinterfacialchemicalreactionsbetweencontactmetalsandSiC,revealingthediffusionandrecombinationstatesofmetalelementsattheinterface,providingimportantinformationforunderstandingtheformationmechanismofOhmiccontacts.ThemicrostructureofthecontactinterfacewasobservedusingSEMandAFM,anditwasfoundthatthecontactbetweenthemetalandSiCwastight,theinterfacewasclear,andtherewerenoobviousdefectsorimpurities.Thisindicatesthatwehavesuccessfullyachievedhigh-qualityOhmiccontactsbyoptimizingthepreparationprocess.在电学性能测试方面，我们采用了四探针测试技术对欧姆接触的电阻率进行了测量。实验结果表明，优化后的欧姆接触电阻率显著降低，达到了预期的低电阻目标。我们还对欧姆接触的稳定性进行了长时间的高温和高功率测试。结果表明，优化后的欧姆接触在高温和高功率环境下表现出良好的稳定性，为SiC器件的长期可靠性提供了有力保障。Intermsofelectricalperformancetesting,weusedfourprobetestingtechnologytomeasuretheresistivityofOhmiccontacts.TheexperimentalresultsshowthattheoptimizedOhmiccontactresistanceissignificantlyreduced,achievingtheexpectedlowresistancetarget.Wealsoconductedlong-termhigh-temperatureandhigh-powertestsonthestabilityofOhmiccontacts.TheresultsindicatethattheoptimizedOhmiccontactexhibitsgoodstabilityinhightemperatureandhighpowerenvironments,providingstrongguaranteesforthelong-termreliabilityofSiCdevices.通过深入的实验研究，我们揭示了SiC欧姆接触的形成机制，优化了接触性能，并成功实现了低电阻、高稳定性的欧姆接触。这些研究成果为SiC器件的实用化奠定了坚实基础，并有望推动SiC在电力电子领域的应用取得更大突破。Throughin-depthexperimentalresearch,wehaverevealedtheformationmechanismofSiCohmiccontact,optimizedthecontactperformance,andsuccessfullyachievedlowresistanceandhighstabilityohmiccontact.TheseresearchresultshavelaidasolidfoundationforthepracticalityofSiCdevicesandareexpectedtopromotegreaterbreakthroughsintheapplicationofSiCinthefieldofpowerelectronics.六、SiC欧姆接触在器件中的应用与性能优化ApplicationandPerformanceOptimizationofSiCOhmicContactinDevicesSiC材料因其出色的物理和化学特性，在电力电子、高温、高频和辐射等恶劣环境下具有广泛的应用前景。欧姆接触作为SiC器件中的关键部分，其性能直接影响到器件的整体性能。因此，研究SiC欧姆接触在器件中的应用与性能优化具有重要意义。SiCmaterialshavebroadapplicationprospectsinharshenvironmentssuchaspowerelectronics,hightemperature,highfrequency,andradiationduetotheirexcellentphysicalandchemicalproperties.Ohmiccontact,asacrucialcomponentinSiCdevices,directlyaffectstheoverallperformanceofthedevice.Therefore,studyingtheapplicationandperformanceoptimizationofSiCohmiccontactsindevicesisofgreatsignificance.在SiC器件中，欧姆接触主要用于实现低电阻、高稳定性的电连接。通过合理的材料选择和结构设计，可以有效地降低接触电阻，提高器件的导电性能。例如，在SiC功率器件中，欧姆接触被广泛应用于实现电极与半导体材料之间的低电阻连接，从而提高器件的功率处理能力。InSiCdevices,Ohmiccontactsaremainlyusedtoachievelowresistanceandhighstabilityelectricalconnections.Throughreasonablematerialselectionandstructuraldesign,contactresistancecanbeeffectivelyreducedandtheconductivityofthedevicecanbeimproved.Forexample,inSiCpowerdevices,Ohmiccontactsarewidelyusedtoachievelowresistanceconnectionsbetweenelectrodesandsemiconductormaterials,therebyimprovingthepowerprocessingcapabilityofthedevice.为了优化SiC欧姆接触的性能，研究者们进行了大量的理论和实验研究。在材料选择方面，研究者们探索了不同金属材料与SiC的接触特性，以期找到具有更低接触电阻、更高稳定性的欧姆接触材料。在结构设计方面，研究者们通过改变接触界面的形貌、引入界面层等方法，来降低接触电阻和提高接触的稳定性。InordertooptimizetheperformanceofSiCohmiccontacts,researchershaveconductedextensivetheoreticalandexperimentalresearch.Intermsofmaterialselection,researchershaveexploredthecontactcharacteristicsofdifferentmetalmaterialswithSiC,inordertofindOhmiccontactmaterialswithlowercontactresistanceandhigherstability.Intermsofstructuraldesign,researchersreducecontactresistanceandimprovecontactstabilitybychangingthemorphologyofthecontactinterfaceandintroducinginterfacelayers.研究者们还通过模拟仿真等方法，对SiC欧姆接触的性能进行了深入的分析和优化。通过模拟仿真，可以预测不同材料和结构下的接触性能，为实验研究和器件设计提供有力支持。Researchersalsoconductedin-depthanalysisandoptimizationoftheperformanceofSiCohmiccontactsthroughsimulationandothermethods.Throughsimulation,thecontactperformanceofdifferentmaterialsandstructurescanbepredicted,providingstrongsupportforexperimentalresearchanddevicedesign.SiC欧姆接触在器件中具有广泛的应用前景和重要的研究价值。通过不断优化材料和结构设计，以及深入的理论和实验研究，我们可以进一步提高SiC欧姆接触的性能，推动SiC器件在各个领域的应用和发展。SiCOhmiccontactshavebroadapplicationprospectsandimportantresearchvalueindevices.Bycontinuouslyoptimizingmaterialandstructuraldesign,aswellasconductingin-depththeoreticalandexperimentalresearch,wecanfurtherimprovetheperformanceofSiCohmiccontactsandpromotetheapplicationanddevelopmentofSiCdevicesinvariousfields.七、结论与展望ConclusionandOutlook本文通过对SiC器件欧姆接触的理论和实验研究进行了深入的探讨，得出了一系列重要的结论。从理论上分析了欧姆接触的基本原理及其在SiC器件中的应用，指出了影响欧姆接触性能的关键因素，如金属功函数、界面态密度、界面化学反应等。通过实验研究了不同金属与SiC材料之间的接触特性，发现了一些具有优良欧姆接触性能的金属材料，如Ti、Al、Ni等。还研究了热处理工艺对欧姆接触性能的影响，发现适当的热处理可以有效地改善欧姆接触性能。通过对实验结果的分析和比较，得出了一些优化欧姆接触性能的有效方法，如选择合适的金属材料、优化热处理工艺等。ThisarticledelvesintothetheoreticalandexperimentalresearchofOhmiccontactinSiCdevices,anddrawsaseriesofimportantconclusions.ThebasicprincipleofOhmiccontactanditsapplicationinSiCdevicesweretheoreticallyanalyzed,andkeyfactorsaffectingOhmiccontactperformancewerepointedout,suchasmetalworkfunction,interfacedensityofstates,interfacechemicalreactions,etc.ThroughexperimentalresearchonthecontactcharacteristicsbetweendifferentmetalsandSiCmaterials,itwasfoundthatsomemetalmaterialswithexcellentOhmiccontactprop