半导体封装制程与设备材料知识介绍课件

半导体封装制程与设备材料知识介绍

半导体封装制程与设备材料知识介绍

1半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试

封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半导体封装制程概述半导体前段晶圆wafer制程2半导

体

制程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)DiffusionIonImplantation(扩散离子植入)Deposition(沉积)WaferInspection(晶圆检查)Grind&Dicing(晶圓研磨及切割)DieAttach(上片)WireBonding(焊线)Molding(塑封)

Package(包装)WaferCutting(晶圆切断)WaferReduce

(晶圆减薄)LaserCut&packagesaw(切割成型)Testing(测试)Lasermark(激光印字)IC制造开始前段結束后段封装开始製造完成半导体制程OxidizationLi3封装型式概述IC封装型式可以分为两大类，一为引脚插入型，另一为表面黏着型构装型态构装名称常见应用产品SingleIn-LinePackage(SIP）PowerTransistorDualIn-LinePackage(DIP）SRAM,ROM,EPROM,EEPROM,FLASH,MicrocontrollerZigzagIn-LinePackage(ZIP）DRAM,SRAMSmallOutlinePackage(SOP）Linear,Logic,DRAM,SRAMPlasticLeadedChipCarrier(PLCC）256KDRAM,ROM,SRAM,EPROM,EEPROM,FLASH,MicrocontrollerSmallOutlinePackage(SOJ）DRAM,SRAM,EPROM,EEPROM,FLASHQuadFlatPackage(QFP）MicroprocessorBALLGridArray(BGA）Microprocessor封装型式概述IC封装型式可以分为两大类，一为引脚插入型，另一4封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage封裝型式(PACKAGE)Throug5封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage封裝型式ThroughHoleSh6封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray封裝型式ThroughHoleSh7封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlinePackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack封裝型式SurfaceShapeMa8封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier封裝型式SurfaceShapeMa9封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFVerySmallQuadFlatpack封裝型式SurfaceShapeMa10SanDiskAssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBond

SMT(Optional)SanDiskAssemblyMainProcessD11半导体设备供应商介绍-前道部分PROCESSVENDORMODELSMT-PRINTERDEKHOR-2ISMT–CHIPMOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINLINEGRINDER&POLISHACCRETECHPG300RMSTANDALONEGRINDERDISCO8560DETAPINGNITTOMA3000

WAFERMOUNTERNITTOMA3000DICINGSAWDISCODFD6361TSKA-WD-300T半导体设备供应商介绍-前道部分PROCESSVENDORMO12PROCESSVENDORMODELDIEBONDHITACHIDB700ESECESEC2007/2008ASMASM889898CUREOVENC-SUNQDM-4SWIREBONDERK&SK&SMAXUMULTRASKWUTC-2000ASMEagle60PLASMACLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA3.8半导体设备供应商介绍-前道部分PROCESSVENDORMODELDIEBONDHITA13半导体设备供应商介绍PROCESSVENDORMODELINKMARKE&RE&RTECA-PRINTPR-601LASERMARKGPMSE+SE39+SE36+SE45鈦昇BLAZON-2600BALLATTACHVANGUARDVAI6300AMSAMS1500iD/DYAMADACU-1028-1GPMSE00+SH01+SH02+SE07FORMINGYAMADACU-1029-1GPMSEH01+SH02+SH25半导体设备供应商介绍PROCESSVENDORMODELIN14半导体设备供应商介绍PROCESSVENDORMODELSINGULATIONGPMSN39+SH52YAMADACUPLATINGMECOEDF+EPL2400AEMSBP2400-EDLEADSCANRVSILS-7700ICOS9450EVER-TECHTS-60半导体设备供应商介绍PROCESSVENDORMODELSI15半导体设备供应商介绍半导体设备供应商介绍16常用术语介绍SOP-StandardOperationProcedureFMEA-FailureModeEffectAnalysisSPC-StatisticalProcessControlDOE-DesignOfExperimentIQC/OQC-Incoming/OutingQualityControlMTBA/MTBF-betweenassit/FailureUPH-UnitsPerHourCPK-品质参数常用术语介绍SOP-StandardOperationP17晶圆研磨(GRINDING)1.GRINDING工艺l

研磨1.研磨分為粗磨與細磨,晶圓粗糙度需小於0.08um..2.細磨厚度在10~20um之間,而二次研磨參數中,細磨厚度為15um(二次研磨變更作業膠膜為230um).3.研磨標準厚度:a.

HSBGA:11~13MIL標準研磨厚度為12MILb.

PBGA:11~16MIL標準研磨厚度為12MIL.c.

LBGA:9.5~10.5MIL標準研磨厚度為10MIL.5.研磨時機器會先量側晶片厚度以此為初始值

,粗磨厚度及最終厚度(即細磨要求的厚度).晶圆研磨(GRINDING)1.GRINDING工艺l

18

Spindle1粗磨

spindle2細磨

清洗區

離心除水

離心除水

背面朝上

Wafer研磨時晶圓與SPINDLE轉向

Spindle1粗磨spindle2細磨192.Grinding相关材料ATAPE麦拉BGinding砂轮CWAFERCASSETTLE2.Grinding相关材料20工艺对TAPE麦拉的要求：1。MOUNTNodelamination

STRONG2。SAW

ADHESIONNodieflyingoffNodiecrack工艺对TAPE麦拉的要求：1。MOUNT21工艺对麦拉的要求：3。EXPANDING

TAPEDiedistance ELONGATION

Uniformity

4。PICKINGUP

WEAK

ADHESIONNocontamination工艺对麦拉的要求：3。EXPANDING22

TAPE種類:a.

ADWILLD-575UV膠膜(黏晶片膠膜白色)厚度150UMb.

ADWILLＧ-295黏晶片膠膜黑色厚度120UMc.

ADWILLS-200熱封式膠帶(去膠膜膠帶)白色厚度７５ＵＭd.

FURUKAWAUC-353EP-110AP(PRE-CUT)UV膠膜白色厚度110ume.

FURUKAWAUC-353EP-110AUV膠膜白色厚110umf.

FURUKAWAUC-353EP-110BPUVTAPE白色厚110um.g.

ADWILLG16P370黑色厚80UM.h.

NITTO224SP75UM

TAPE種類:233.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪

一般有接触式和非接触式光学测量仪两种；BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式；3.Grinding辅助设备244.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机4.Grinding配套设备25

Taping需確認wafer是否有破片或污染或者有氣泡等等現象.特别是VOID；上膠膜後容易發生的defect为龟裂或破片；

切割正面上膠

上膠

電腦偵測方向

取出

背面朝下

Taping切割正面上膠上膠電腦偵測方向取出26DetapingDetaping27l

Wafermount

Waferframel

Wafermount

Waferframe28晶圓切割(Dicing)1.Dicing设备介绍ADISCO641/651系列BACCERTECH东京精密200T/300T晶圓切割(Dicing)1.Dicing设备29MainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,

RotationArmMainSectionsIntroductionCutt30BladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzleBladeClose-ViewBladeCuttingW31Twin-SpindleStructureRearFrontX-axisspeed:upto600mm/sCuttingspeed:upto80mm/sTwin-SpindleStructureRearFron32AFewConceptsBBD(BladeBrokenDetector)Cutter-set:ContactandOpticalPrecisionInspectionUp-CutandDown-CutCut-inandCut-remainAFewConceptsBBD(BladeBroke33晶圓切割(Dicing)2.Dicing相关工艺ADieChipping芯片崩角BDieCorrosive芯片腐蚀CDieFlying芯片飞片晶圓切割(Dicing)2.Dicing相关34Wmax,Wmin,Lmax,DDY,DY規格— DY<0.008mm Wmax<0.070mm Wmin<0.8*刀厚 Lmax<0.035Wmax,Wmin,Lmax,DDY,DY35

切割時之轉速予切速:a.

轉速:指的是切割刀自身的轉速b.

切速:指的是Wafer移動速度.主軸轉速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM

切割時之轉速予切速:主軸轉速:36

切割至膠膜時所能切割之深度

UVTAPE:0.100+/-0.005mm(ForLintec)BLUETAPE:0.050+/-0.005mm(ForNittospv224)G-16Tape:0.050+/-0.005mm(ForLintecG-16)UVTape:0.08+/-0.005mm(ForFURUKAWAUC-353EP-110AP)

切割至膠膜時所能切割之深度37晶圓切割(Dicing)3.Dicing相关材料ATapeBSawBLADE切割刀CDI去离子水、RO纯水晶圓切割(Dicing)3.Dicing相关38切割刀的規格

因所切產品的特性不同(Wafer材質、厚度、切割道寬度)，所需要的切割刀規格也就有所不同，其中規格就包括了刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇，只要任何一種規格的不同，所切出來的品質也就不一樣。P4切割刀的規格P439Sawblade对製程的影響

ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發生。2.切割街区的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11Sawblade对製程的影響分析:P1140

切割刀的影響

DiamondGritSize(鑽石顆粒大小)

GRITSIZE

+-

TopSideChipping+-

BladeLoading+-

BladeLife+-

FeedRate+-分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。P15切割刀的影響GRITSIZE+-41TAPE粘度对SAW製程的影響

MountingTape(膠膜黏力)

TAPEADHESION

+-

CutQuality+-

FlyingDie+-分析:使用較黏膠膜可獲得1.沒有飛Die。2.較好的切割品質。潛在風險

DieAttachprocesspickupdie

影響。

Cost+-

DieEjection+-P10TAPE粘度对SAW製程的影響TAPEADH42晶圓切割(Dicing)4.Dicing辅助设备ACO2Bubbler二氧化碳发泡机BDIWater电阻率监测仪CDiamaflow发生器DUV照射机晶圓切割(Dicing)4.Dicing辅助43上片

(DieBond)1.DieBond

设备介绍AESEC2007/2008系列BALPHASEM8002/9002系列CASM829/889/898系列上片(DieBond)1.DieBond设备介绍44半导体封装制程与设备材料知识介绍ppt课件45半导体封装制程与设备材料知识介绍ppt课件46上片

(DieBond)2.DieBond

相关工艺X,YPLACEMENT;BLT;TILT;ROTATIONTHETA;CPKDIEROTATIONTHETAPLACEMENTACCURACYX,Y(CP)BONDLINETHICKNESS(CPK)EXPOYTHICKNESSTILT(CPK)VOID、DIESHARE上片(DieBond)2.DieBond相关工艺X,47上片

(DieBond)3.DieBond

相关材料ALeadframeBSubstrateCEpoxy银浆DWaferafterSawEMagazine弹夹上片(DieBond)3.DieBond相关材料48Substrate

BasicStructure:CoreAuNiCuSolderMaskBondFingerViaHoleBallPadSubstrate BasicStructure:C49BasicInformationCore： 玻璃纤维+树脂，0.1-0.4mm镀铜层： 25um+/-5um镀镍层： 5.0-12.5um镀金层： 0.50-1.10umSolderMask：25um+/-5um总厚度： 0.21-0.56mmSubstrateDrawing厚度：0.22+/-0.06mmMCEL建议Vendor提供的Substrate厚度：0.24+/-0.04mmBasicInformationCore： 玻璃纤维+树脂50發料烘烤線路形成(內層)AOI自動光學檢測壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測成型AOI自動光學檢測出貨BGA基板製造流程(option)發料烘烤線路形成(內層)AOI自動光學檢測壓合4layer51上片

(DieBond)4.DieBond

辅助设备A银浆搅拌机

利用公转自转离心力原理脱泡及混合；主要参数有：MIXING/DEFORMINGREVOLUTIONSPEED

外加计时器；公转用于去泡；自转用于混合；上片(DieBond)4.DieBond辅助设备52BCuringOven无氧化烤箱主要控制要素：N2流量；排气量；profile温度曲线；每箱摆放Magazine数量；BCuringOven无氧化烤箱53CWafermapping应用CWafermapping应用54焊线(WireBond)1.WireBond

相关工艺

PadOpen&BondPadPitchBallSizeBallThicknessLoopheightWirePullBallshortCraterTest焊线(WireBond)1.WireBond相关工艺55padleadFreeairballiscaptured

inthechamferpadleadFreeairballiscaptur56Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in57Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in58Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in59Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in60FormationofafirstbondpadleadFormationofafirstbondpadle61FormationofafirstbondpadleadFormationofafirstbondpadle62FormationofafirstbondpadleadheatPRESSUREUltraSonicVibrationFormationofafirstbondpadle63FormationofafirstbondpadleadUltraSonicVibrationheatPRESSUREFormationofafirstbondpadle64Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh65Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh66Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh67Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh68Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh69FormationofalooppadleadFormationofalooppadlead70FormationofalooppadleadFormationofalooppadlead71padleadpadlead72padleadpadlead73padleadpadlead74padleadpadlead75padleadpadlead76padleadpadlead77padleadpadlead78padleadpadlead79padleadpadlead80padleadpadlead81padleadpadlead82padleadpadlead83padleadpadlead84padleadpadlead85padleadpadlead86padleadpadlead87FormationofasecondbondpadleadheatFormationofasecondbondpadl88FormationofasecondbondpadleadheatheatFormationofasecondbondpadl89padleadheatheatpadleadheatheat90padleadheatheatpadleadheatheat91padleadpadlead92padleadpadlead93padleadpadlead94padleadpadlead95padleadpadlead96padleadpadlead97padleadDisconnectionofthetailpadleadDisconnectionoftheta98padleadDisconnectionofthetailpadleadDisconnectionofthet99padleadFormationofanewfreeairballpadleadFormationofanewfree100焊线(WireBond)2.WireBond

相关材料LeadframCapillaryGoldWire

焊线(WireBond)2.WireBond相关材料101LeadframLeadfram102CapillaryCapillaryManufacturer(SPT,GAISER,PECO,TOTO…)CapillaryData(Tip,Hole,CD,FA&OR,IC)CapillaryCapillaryManufactu103HowToDesignYourCapillaryTIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA >100 0,4 ~90/100 4,8,11<90 11,15 ICtype……looptypeCapillaryHowToDesignYourCapillaryTI104GoldWire

GoldWireManufacturer (Nippon,SUMTOMO,TANAKA….)GoldWireData (WireDiameter,Type,EL,TS)GoldWireGoldWireManufactur105焊线(WireBond)3.WireBond

辅助设备AMicroscope用于测loopheightBWirePull拉力计（DAGE4000）CBallShear球剪切力计DPlasma微波/等离子清洗计焊线(WireBond)3.WireBond辅助设备106BallSizeBallThickness

單位:um，Mil

量測倍率:50X

BallThickness計算公式

60umBPP≧1/2WD=50%60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThicknessBallSizeBallThickness單位:um107LoopHeight

單位:um，Mil

量測倍率:20XLoopHeight

線長LoopHeight單位:um，MilLoopHei108WirePull1LiftedBond(Rejected)2Breakatneck(Referwire-pullspec)3Breakatwire(Referwire-pullspec)4Breakatstitch(Referstitch-pullspec)5Liftedweld(Rejected)WirePull1LiftedBond(Rejec109BallShear

單位:gramorg/mil²BallShear計算公式

Intermetallic（IMC有75%的共晶,ShearStrength標準為＞6.0g/mil²。SHEARSTRENGTH＝BallShear/Area(g/mil²)BallShear=x;BallSize=y;Area=π(y/2)² x/π(y/2)²=zg/mil²BallShear單位:gramorg/mil²110PlasmaCleaning的原理：Plasma的产生：

电极(电能)

Plasma

气 体 (O2,H2,He,Ar..)PlasmaCleanin