CESD5V0D1 SOD-123 5V单向ESD保护二极管-CESD5V0D1参数-骊微电子

深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,SOD-123Plastic-EncapsulateDiodesESDProtectionDiodeESIPTNDesignedtoprotectvoltagesensitiveelectroniccomponentsfromESDandothertransients.Excellentclampingcapability,lowleakage,andfastresponsetimeprovidebestinclassprotectionondesignsthatareexposedtoESD.Thecombinationofsmallsize,highlevelofESDprotectionmakesthemaflexiblesolutionforapplicationssuchasHDMI,DisplayPortTM,andMDDIinterfaces.Itisdesignedtoreplacemultiplayervaristors(MLV)inconsumerequipmentsapplicationssuchasmobilephone,notebook,PAD,STB,LCDTVetc.FFETESUni-directionalESDprotectionofonelineReversestand−offvoltage:5VLowreverseclampingvoltageLowleakagecurrentExcellentpackage:2.7mm×1.6mm×1.1mm

FastresponsetimeJESD22-A114-BESDRatingofclass3BperhumanbodymodelIEC61000-4-2Level4ESDprotectionPPLITISComputersandperipheralsAudioandvideoequipmentCellularhandsetsandaccessories

PortableelectronicsOtherelectronicsequipmentscommuni-cationsystemsFrontside

KE=DevicecodeThemarkingbarindicatesthecathodeGGELEC.TECH.MAXIMUMTINGS(T℃swed)CESD5V0D1ParameterSymbolLimitUnitIEC61000-4-2ESDAirModelContactModelV (1)ESD±25kV±25JESD22-A114-BESDPerHumanBodyModel±16ESDMachineModel±0.4PeakPulsePowerP(2)PP170WPeakPulseCurrentI(2)PP13ALeadSolderTemperature−Maximum(10SecondDuration)TL260℃JunctionTj150℃StorageRangeTstg-55~+150℃(1).Devicestressedwithtennon-repetitiveESDpulses.(2).Non-repetitivecurrentpulse8/20µsexponentialdecaywaveformaccordingtoIEC61000-4-5.ESESDndadsomplineIEC61000-4-2Standard JESD22-A114-BStandardtcarrrelteelte121224243638484DandyDreV0～49～99～990～120～30～70～199 ESDpulsewaveformaccordingtoIEC61000-4-2 8/20μspulsewaveformaccordingtoIEC61000-4-5GGELEC.TECH.LCESD5V0D1aaerCpngae@IPPIPPkseuBRdonole@ITITTtIRsekaert@WMWMsedfFFrardag@IFIFFrardCeLAT℃unlsohwiepiid)ParameterSymbolconditionsMinMaxUnitReversestandoffvoltageV （1）RWM5VReverseleakagecurrentIRVRWM=5V1μABreakdownvoltageV(BR)IT=1mA6.27.3VClampingvoltageV（2）CIPP=13A13VForwardvoltageVFIF=10mA0.9VJunctioncapacitanceCJ95pF(1).Othervoltagesavailableuponrequest.(2).Non-repetitivecurrentpulse8/20μsexponentialdecaywaveformaccordingtoIEC61000-4-5CHANGJIANGCHANGJIANGELEC.TECH.CESD5V0D1TYPICALTYPICALHARACTERISTICSss

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(V)深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商PACKAGEOUTLINEPACKAGEOUTLINEANDPADLAYOUTINFORMATIONSOD-123PackageOutlineDimensions SySybolDensonsneesDensonsnnchesnaxnaxA1050125000410049A10000010000000004A21050115000410045b0450065000180026c0080015000030006D1500