单端反激DC-DCMatlab仿真

实用标准文档计算机仿真技术作业五题目：单端反激 DC/DC 电路仿真利用simpowersystems建立单端反激电路的仿真模型。输入直流电压28V，输出电压5V，输出额定功率30W。电路开关频率10kHz，整流二极管通态压降0.7V，计算功率管的工作占空比，并选择开关管（选择MOSFET）及二极管。模型建立:建立单端反激变换器电路模型如下图：理论计算:计算功率管占空比:由N2=5，UoN2?DUd，得D=50%N128N11D仿真过程:仿真算法选择 ode23tb ，最大步长设为 1μs变压器仿真设置文案大全实用标准文档1.满负载的仿真。DC/DC变换器，R=0.68欧姆，C=4700uf,仿真时间0.2s。观察并记录MOSFET的工作波形（电压，电流波形），输出整流二极管的工作波形（电压，电流波形），输出电压波形。MOSFET的工作波形（电压，电流波形）文案大全实用标准文档MOSFETvoltage60V50/e40gato30TvEF20SOM1000.08630.08640.08650.08660.08670.08680.08690.0870.08710.08720.0873Time/sMOSFETcurrent32.5A/2tner1.5uTcE1FSO0.5M0-0.50.08640.08650.08660.08670.08680.08690.0870.08710.08720.08730.0863Time/s整流二极管的工作波形（电压，电流波形）Diodevoltage20V-2输e/galo-4ve出od-6iD电-8-100.11760.11770.11780.11790.1180.11810.11820.11830.11840.1175压Time/sDiodecurrent波15A10neruced5VoD0o0.11750.11760.11770.11780.11790.1180.11810.11820.11830.1184Time/s文案大全实用标准文档Outputvoltage4.254.244.234.22V/egtalov 4.21tutpuO4.24.194.184.170.060.06010.06020.06030.06040.06050.06060.06070.0599Time/s由上图可得输出电压稳态值为 Vo=4.212V，纹波电压为 Vo=0.0655V选择占空比D=53%时，输出电压稳态值为 Vo=5.006VMOSFET的工作波形（电压，电流波形）文案大全实用标准文档Diodevoltage0V/egatl -5ovedoiD-100.0512 0.0513 0.0514 0.0515 0.0516 0.0517 0.0518 0.0519Time/sDiodecurrent2015A/tneru 10cedoiD 500.05120.05130.05140.05150.05160.05170.05180.0519Time/s整流二极管的工作波形（电压，电流波形）文案大全实用标准文档Diodevoltage0V/egatl -5ovedoiD-100.0512 0.0513 0.0514 0.0515 0.0516 0.0517 0.0518 0.0519Time/sDiodecurrent2015A/tneru 10cedoiD 500.05120.05130.05140.05150.05160.05170.05180.0519Time/sOutputvoltage5.055.045.035.02V5.01egato5vtupuO4.994.984.974.964.950.06840.06850.06860.06870.06880.06890.0690.06910.06920.06930.0683Time/s文案大全实用标准文档输出电压稳态值为 Vo=5.006V，纹波电压为 Vo=0.0828V2.小负载的仿真。R=10欧姆,C=4700uf仿真时间0.5s。选择合适占空比,使得输出电压为5V。观察并记录MOSFET的工作波形（电压，电流波形），输出整流二极管的工作波形（电压，电流波形），输出电压波形。当占空比为D=35.85%时，输出电压Vo=5.001VMOSFET的工作波形（电压，电流波形）MOSFETvoltage60V/egtl 40ovTEF 20SOM00.075 0.0752 0.0754 0.0756 0.0758 0.076 0.0762 0.0764 0.0766Time/sMOSFETcurrent1A/n0.5eucTEFS0OM-0.50.07520.07540.07560.07580.0760.07620.07640.07660.075Time/s整流二极管的工作波形（电压，电流波形）文案大全实用标准文档Diodevoltage20V-2/ega-4tove-6doiD-8-10-120.05130.05140.05150.05160.05170.05180.05190.0520.0521Time/s4Diodecurrent3A/tn2eruced1oiD0-10.05140.05150.05160.05170.05180.05190.0520.05210.0513Time/s输出电压波形文案大全实用标准文档Outputvoltage5.0065.0055.0045.003V5.002egao5.001vtupuO54.9994.9984.9974.9960.17980.180.18020.18040.18060.18080.1796Time/s由上图可得输出电压稳态值为 Vo=5.001V，纹波电压为 Vo=0.0076V通过仿真分析，选择合适的功率管和整流二极管(耐压，耐流)。二极管的选取要根据原边的 (交流电压峰值／匝比 +输出电压）+百分之二十的最高电压+百分之十到二十的余量＝二极管最终选取电压值由满负载仿真情况，功率管耐压值为 100V，耐流值为 8A二极管耐压值为 20V，耐流值为 30A附录:Script:Flyback.msubplot(2,1,1)文案大全实用标准文档plot(MOSFET.MOSFET_voltage)axis([0.,0.0766,-10,70])xlabel('Time/s')ylabel('MOSFETvoltage/V' )title('MOSFETvoltage' )subplot(2,1,2)plot(MOSFET.MOSFET_current)axis([0.,0.0766,-0.5,1])xlabel('Time/s')ylabel('MOSFETcurrent/A' )title('MOSFETcurrent' )figure(2)subplot(2,1,1)plot(Diode.Diode_voltage)axis([0.0513,0.0521,-12,2])xlabel('Time/s')ylabel('Diodevoltage/V' )title('Diodevoltage' )subplot(2,1,2)plot(Diode.Diode_current)axis([0.0513,0.0521,-1,4])xlabel('Time/s')文案大全实用标准文档ylabel('