芯片制造流程课件

ChipManufacturingOverview

芯片制作概述晶柱SiliconIngot晶圆Wafer光罩制作/光刻离子植入切割、封装电镀(Die,晶粒)(Chip,晶芯)蚀刻MaskMaking/PhotolithographyIonImplantationAssembly&TestingElectroplatingEtching沉积DepositionChipManufacturingOverview

1芯片制造流程课件2Tomakewafers,polycrystallinesiliconismelted.Themeltedsiliconisusedtogrowsiliconcrystals(oringots)thatareslicedintowafers.首先融化多晶硅，生成晶柱，然后切割成晶圆。RawMaterialforWafers

晶圆制作所需原料Tomakewafers,polycrystallin3Toremovethetiniestscratchesandimpurities,onesideofeachwaferispolishedtoamirror-likesurface.Chipsarebuiltonthissurface.切下的晶圆要经过清洁、磨光等步骤以去除杂质，使平面光滑。RawMaterialforWafers(Cont’d)

晶圆制作所需原料(接上页)Toremovethetiniestscratche4Alayerofsilicondioxide(SiO2)glassisgrownonthewaferbyexposingthewafertooxygenatveryhightemperatures.Aprocesscalledchemicalvapordeposition(CVD)isthenusedtocoatsilicondioxideontothewafersurface.Becauseitwillnotconductelectricity,thislayeriscalled“dielectric”.Later,channelswillbeetchedorotherwiseformedinthedielectricforconductingmaterials.SiO2mayalsobegrownordepositedduringlaterstepsintheprocessaslayersofthecircuitarebuiltontothechips:制作晶片的第一步是在晶圆上沉积一层不导电的二氧化硅。在晶片的后续制作过程中，二氧化硅层的成长、沉积会进行很多次。在高温下使晶圆曝氧可以使二氧化硅层成长。然后使用化学气相沉积方法使二氧化硅层沉积在晶圆表面。ChipManufacturingProcess–Deposition

芯片制作过程–沉积SMICAlayerofsilicondioxide(Si5Whatismicrolithography?Microlithography:transferthepatternofcircuitryfromamasktoawafer.Whatismicrolithography?Micro6Photolithography,orlithographyforshort,isusedtocreatemultiplelayersofcircuitpatternsonachip.First,thewaferiscoatedwithalight-sensitivechemicalcalledphotoresist.Thenlightisshonethroughapatternedplatecalledamaskorreticletoexposetheresist—muchthesamewayfilmisexposedtolighttoformaphotographicimage.下面使用光刻制程在芯片建立多层电路图案。首先，晶圆表面上覆盖上一层感光性强的化学制品光刻胶。象光透过电影底片形成图象一样，光透过光掩膜在晶圆上形成图案。ChipManufacturingProcess–Photolithography

芯片制作过程–光刻SMICPhotolithography,orlithograp7Thewafersexposuretolightinlithographycausesportionsoftheresistto“harden”(orbecomeresistanttocertainchemicals).The“non-hardened”resistiswashedaway.Thenthematerialbelowit,forexampleSiO2,isetchedaway.Finally,the“hardened”resistisstrippedoffsothatthematerialunderneathformsathree-dimensionalpatternonthewafer.ThefirstlithographyandetchprocesswillresultinapatternofSiO2.

光刻制程后，感光部分的光刻胶具有强的抗腐蚀性，抗腐蚀性弱的光刻胶在接下来的制程里被洗去。接着光刻胶下面的部分被蚀刻制程除去。最后，抗腐蚀性强的光刻胶也被剥离。光刻与蚀刻制程在晶圆表面形成3D的图案。ChipManufacturingProcess–Etching

芯片制作过程–蚀刻SMICThewafersexposuretolighti8Throughseverallithographyandetchsteps,subsequentlayersofvariouspatternedmaterialsarebuiltuponthewafertoformmultiplelayersofcircuitpatternsonasinglechip.经过几次光刻与蚀刻步骤，在晶圆表面叠加成多层不同图案ChipManufacturingProcess–FormingMultipleLayers

芯片制作过程–生成多层SMICThroughseverallithographyan9Tocontroltheflowofelectricitythroughachip,certainareasofthewaferareexposedtochemicalsthatchangeitsabilitytoconductelectricity.Atomsfromthechemicals,calleddopingmaterials,canbe“diffused,”orforced,intoareasofthesiliconwaferthroughchemicalexposureandheating.为了能在晶片上控制电流，加热晶圆，使晶圆部分区域接触添加剂。添加剂里的原子能够替换晶圆里的部分硅原子来改变其导电性。

ChipManufacturingProcess–IonImplantation

芯片制作过程–离子植入SMICTocontroltheflowofelectri10

Theportionsofachipthatconductelectricityformthechip’sinterconnections.Aconductingmetal(usuallyaformofaluminum)isdepositedontheentirewafersurface.Unwantedmetalremovedduringlithographyandetchingleavesmicroscopicallythinlinesofmetalinterconnects.Allthemillionsofindividualconductivepathwaysmustbeconnectedinorderforthechiptofunction.ThisincludesverticalinterconnectionsbetweenthelayersaswellashorizontalInterconnectionsacrosseachlayerofthechip.

进行电连接。导电金属（通常是铝）在晶圆表面沉积。使用光刻和蚀刻制程去除没有用的金属。现在复杂的晶片都需要很多层绝缘体。一个正常运作的晶片需要连接数以百万计的传导线路，包括层上水平连接和各层之间的垂直连接。ChipManufacturingProcess–Electroplating

芯片制作过程–电路连接SMIC

11SMIC0.13uCuBEOLFlowSMICiscurrentlyrunning1P6M,1P8MprocessSMIC0.13uCuBEOLFlowSMICis12Eachchiponacompletedwaferistestedforelectricalperformance.Anychipsthatfailaremarkedsotheycanbediscardedwhensawedintoindividualdies.Thechipsareputintoindividualpackageswhichwillprotectthechipsandprovideconnectionsfromthechipstotheproductsforwhichtheyaredesigned.Forexample,chipsdestinedforcomputersareplacedInpackagingthatcanbepluggedintocomputercircuitboards.Oncepackaged,chipsaretestedagaintomakesuretheyfunctionproperlybeforebeingshippedtodistributorsorplacedinelectronicproducts.

晶圆上的每一个晶粒都需要进行测试。有缺陷的晶粒被标记起来，在进行晶圆切割时这些晶粒被剔除。每个晶粒都按要实现功能的不同进行单独封装。比如要应用在电脑上的晶粒被封装后能够插入电脑集成电路板。封装好后，在进行最终使用前，晶粒将进行再一次测试以确保功能正常。ChipManufacturingProcess–Assembly&Testing

芯片制作过程–切割、封装SMICEachchiponacompletedwafer13PackageTypesandApplications(1)Conventional–LeadframeType(PDIP,SOP,TSOP,QFP)Advanced–SubstrateType(BGA)MoldingcompoundLeadframeGoldwireDieEpoxy(Silverpaste)DieattachpadMoldingcompoundEpoxy(Silverpaste)DieGoldwireSolderballBTresinThroughholeDieGoldwireLOCtapeLeadframewithDown-setLOC(Lead-on-chip)IntroductionoftheSemiconductorPackagesandAssemblyPackageTypesandApplications14晶柱SiliconIngot晶圆Wafer离子植入切割、封装电镀(Die,晶粒)(Chip,晶芯)蚀刻沉积IonImplantationAssembly&TestingElectroplatingEtchingDepositionSMICBusiness应用领域Applications应用领域光罩制作/光刻MaskMaking/

Photolithography中芯业务ChipManufacturingProcessSummary

芯片制作过程总结晶柱晶圆离子植入切割、封装电镀(Die,晶粒)(Chip,晶15Thanks谢谢Q&A请您提问Thanks谢谢16芯片制造流程课件17ChipManufacturingOverview

芯片制作概述晶柱SiliconIngot晶圆Wafer光罩制作/光刻离子植入切割、封装电镀(Die,晶粒)(Chip,晶芯)蚀刻MaskMaking/PhotolithographyIonImplantationAssembly&TestingElectroplatingEtching沉积DepositionChipManufacturingOverview

18芯片制造流程课件19Tomakewafers,polycrystallinesiliconismelted.Themeltedsiliconisusedtogrowsiliconcrystals(oringots)thatareslicedintowafers.首先融化多晶硅，生成晶柱，然后切割成晶圆。RawMaterialforWafers

晶圆制作所需原料Tomakewafers,polycrystallin20Toremovethetiniestscratchesandimpurities,onesideofeachwaferispolishedtoamirror-likesurface.Chipsarebuiltonthissurface.切下的晶圆要经过清洁、磨光等步骤以去除杂质，使平面光滑。RawMaterialforWafers(Cont’d)

晶圆制作所需原料(接上页)Toremovethetiniestscratche21Alayerofsilicondioxide(SiO2)glassisgrownonthewaferbyexposingthewafertooxygenatveryhightemperatures.Aprocesscalledchemicalvapordeposition(CVD)isthenusedtocoatsilicondioxideontothewafersurface.Becauseitwillnotconductelectricity,thislayeriscalled“dielectric”.Later,channelswillbeetchedorotherwiseformedinthedielectricforconductingmaterials.SiO2mayalsobegrownordepositedduringlaterstepsintheprocessaslayersofthecircuitarebuiltontothechips:制作晶片的第一步是在晶圆上沉积一层不导电的二氧化硅。在晶片的后续制作过程中，二氧化硅层的成长、沉积会进行很多次。在高温下使晶圆曝氧可以使二氧化硅层成长。然后使用化学气相沉积方法使二氧化硅层沉积在晶圆表面。ChipManufacturingProcess–Deposition

芯片制作过程–沉积SMICAlayerofsilicondioxide(Si22Whatismicrolithography?Microlithography:transferthepatternofcircuitryfromamasktoawafer.Whatismicrolithography?Micro23Photolithography,orlithographyforshort,isusedtocreatemultiplelayersofcircuitpatternsonachip.First,thewaferiscoatedwithalight-sensitivechemicalcalledphotoresist.Thenlightisshonethroughapatternedplatecalledamaskorreticletoexposetheresist—muchthesamewayfilmisexposedtolighttoformaphotographicimage.下面使用光刻制程在芯片建立多层电路图案。首先，晶圆表面上覆盖上一层感光性强的化学制品光刻胶。象光透过电影底片形成图象一样，光透过光掩膜在晶圆上形成图案。ChipManufacturingProcess–Photolithography

芯片制作过程–光刻SMICPhotolithography,orlithograp24Thewafersexposuretolightinlithographycausesportionsoftheresistto“harden”(orbecomeresistanttocertainchemicals).The“non-hardened”resistiswashedaway.Thenthematerialbelowit,forexampleSiO2,isetchedaway.Finally,the“hardened”resistisstrippedoffsothatthematerialunderneathformsathree-dimensionalpatternonthewafer.ThefirstlithographyandetchprocesswillresultinapatternofSiO2.

光刻制程后，感光部分的光刻胶具有强的抗腐蚀性，抗腐蚀性弱的光刻胶在接下来的制程里被洗去。接着光刻胶下面的部分被蚀刻制程除去。最后，抗腐蚀性强的光刻胶也被剥离。光刻与蚀刻制程在晶圆表面形成3D的图案。ChipManufacturingProcess–Etching

芯片制作过程–蚀刻SMICThewafersexposuretolighti25Throughseverallithographyandetchsteps,subsequentlayersofvariouspatternedmaterialsarebuiltuponthewafertoformmultiplelayersofcircuitpatternsonasinglechip.经过几次光刻与蚀刻步骤，在晶圆表面叠加成多层不同图案ChipManufacturingProcess–FormingMultipleLayers

芯片制作过程–生成多层SMICThroughseverallithographyan26Tocontroltheflowofelectricitythroughachip,certainareasofthewaferareexposedtochemicalsthatchangeitsabilitytoconductelectricity.Atomsfromthechemicals,calleddopingmaterials,canbe“diffused,”orforced,intoareasofthesiliconwaferthroughchemicalexposureandheating.为了能在晶片上控制电流，加热晶圆，使晶圆部分区域接触添加剂。添加剂里的原子能够替换晶圆里的部分硅原子来改变其导电性。

ChipManufacturingProcess–IonImplantation

芯片制作过程–离子植入SMICTocontroltheflowofelectri27

Theportionsofachipthatconductelectricityformthechip’sinterconnections.Aconductingmetal(usuallyaformofaluminum)isdepositedontheentirewafersurface.Unwantedmetalremovedduringlithographyandetchingleavesmicroscopicallythinlinesofmetalinterconnects.Allthemillionsofindividualconductivepathwaysmustbeconnectedinorderforthechiptofunction.ThisincludesverticalinterconnectionsbetweenthelayersaswellashorizontalInterconnectionsacrosseachlayerofthechip.

进行电连接。导电金属（通常是铝）在晶圆表面沉积。使用光刻和蚀刻制程去除没有用的金属。现在复杂的晶片都需要很多层绝缘体。一个正常运作的晶片需要连接数以百万计的传导线路，包括层上水平连接和各层之间的垂直连接。ChipManufacturingProcess–Electroplating

芯片制作过程–电路连接SMIC

28SMIC0.13uCuBEOLFlowSMICiscurrentlyrunning1P6M,1P8MprocessSMIC0.13uCuBEOLFlowSMICis29Eachchiponacompletedwaferistestedforelectricalperformance.Anychipsthatfailaremarkedsotheycanbediscardedwhensawedintoindividualdies.Thechipsareputintoindividualpackageswhichwillprotectthechipsandprovideconnectionsfromthechipstotheproductsforwhichtheyaredesigned.Forexample,chipsdestin