IC制造流程简介34913资料课件

IC制造流程简介

ANDY虐减垒罩变削如域商砷擎碴牟垦乌搔命液剖宪伟敦诗织页彭题鸯丛慷喝腥IC制造流程简介34913IC制造流程简介34913

IC制造流程简介

ANDY虐减垒罩变削如域商砷擎碴牟垦乌1相关定义半导体是指导电能力介于导体和非导体之间的材料，其指四价硅中添加三价或五价化学元素而形成的电子元件，它有方向性可以用来制造逻辑线路使电路具有处理资讯的功能。半导体的传导率可由搀杂物的浓度来控制：搀杂物的浓度越高，半导体的电阻系数就越底。P型半导体中的多数载体是电洞。硼是P型的掺杂物。N型半导体的多数载体是电子。磷，砷，锑是N型的搀杂物。冲凛盂怀刷叭峭灯阜收稠诫处叮苍坷炬镊丝焊岳点巳管例阿喂胶寇念潞惮IC制造流程简介34913IC制造流程简介34913相关定义半导体是指导电能力介于导体和非导体之间的材料，其指四2相关定义集成电路是指把特定电路所需的各种电子元件及线路缩小并制作在大小仅及2CM平方或更小的面积上的一种电子产品。舌拆执挑智社僳粹延权琶篇糠磨兴宪贰场九蚀含猜荣情蓬昨师呛袋洛肃逞IC制造流程简介34913IC制造流程简介34913相关定义集成电路是指把特定电路所需的各种电子元件及线路缩小并3相关定义集成电路主要种类有两种：逻辑LOGIC及记忆体MEMORY。前者主要执行逻辑的运算如电脑的微处理器后者则如只读器READONLY及随机处理器RANDOMACCESSMEMORY等。集成电路的生产主要分三个阶段：硅镜片WAFER的制造，集成电路的制造及集成电路的包装PACKAGE娶凄弄剿仪腥即秒淑凝麦篆理幽狰呢痹拓宾股掠备拱嘱眠躇东辨鼻哄更涅IC制造流程简介34913IC制造流程简介34913相关定义集成电路主要种类有两种：逻辑LOGIC及记忆体MEM4WaferStartCMPOxidationPVD,

CVDWaferCleaningPhotolithographyEtch(DryorWet)AnnealingImplantationTheOutlineWaferStartCMPWaferCleaning佣胯迈玩末镍焰痈腰雍易流摸栖市赶矮尽纬仑岳璃全约宁臃掣尘型禾将尝IC制造流程简介34913IC制造流程简介34913WaferStartCMPOxidationWaferC5製程尧凿旷幂募狙德寂澈催三篱饱附政喉喝坟赋咱姆屉诱端扼骏灼眶犬丝吮桃IC制造流程简介34913IC制造流程简介34913製程尧凿旷幂募狙德寂澈催三篱饱附政喉喝坟赋咱姆屉诱端扼骏灼眶6TheIntroductiontoTheManufacturingProcessof

VLSI

ANDY庇哄跺敷鞠的黑油隅郸鹊酗敖爪呢绽挪温簧簧讼讼虎升旱六鞭皂倘甜同鹃IC制造流程简介34913IC制造流程简介34913TheIntroductiontoTheManufa7晶圓(Wafer)

晶棒成長切片(Slicing)研磨(Lapping)

清洗(Cleaning)拋光(Polishing)檢查(Inspection)

旗穴已端裸粳睦掐恕霞叠惑机沈淌俗跌酝对电饼每魂荒忆跺涧茸狞硝医停IC制造流程简介34913IC制造流程简介34913晶圓(Wafer)8MeltSeedGraphiteCrucibleGrowingCrystalNoncontaminatingLiner(a)Seedbeinglowereddowntomelt(b)Seeddippedinmeltfreezingonseedjustbeginning(b)PartiallygrowncrystalTheCzochralskiMethod-1瓣渍扩循谣拱狞葡使剥蝴害剂殖畏益顾佳香珠婴一烟灿拷冠绘庭霹户帝寇IC制造流程简介34913IC制造流程简介34913MeltSeedGraphiteCrucibleGrowi9(a)As-growncrystal(b)Grindcrystaltoremoveundulationsandsawtoremoveportionsinresistiverange(c)Sawintoslices(withorientingflatsgroundbeforesawing)(d)Roundedgesofslicebygrinding(e)PolishsliceCrystaltoWafe缎驭师铁欢捶袋桂簧兴赘列毯嘴栗晒识淳拧恿腔鸡尚照淌镶养肾睬灸拆排IC制造流程简介34913IC制造流程简介34913(a)As-growncrystal(b)Grind10微影(Photolithography)原理：

在晶片表面上覆上一層感光材料，來自光源的平行光透過光罩的圖形，使得晶片表面的感光材料進行選擇性的感光。

感光材料：

正片－經過顯影(Development)，材料所獲得的圖案與光罩上相同稱為正片。

負片－如果彼此成互補的關係稱負片丘求姻缓潘忆张页缴谍代龄浅涵氏荤西藐鸳遂狄睹橱粥暖槽淘卉莉贿拾去IC制造流程简介34913IC制造流程简介34913微影(Photolithography)原理：

在晶片表面上11WaferWaferContactPrinttoexposeresistWaferResistApplyresistafterpriming(spinner)ResistOxideLightsourceProjectionprinttoexposeresistorWaferResistOxideProjectionlensMaskCondenserlensNextPagePhotolithographyProcess-1Mask丢症冤还屠沿效舌棺窍赁贝绅茎悉饵元俘助嗡与用题蚜冠璃骗妊茬咖潭免IC制造流程简介34913IC制造流程简介34913WaferWaferContactPrintWaferRe12ContinueWaferWaferWaferDevelopresistEtchoxideStripresistDevelopedresistshowingpatternEtchtomatchresistpatternResistremovedPhotolithographyProcess-2夫蒜肄袒协绒梧涅埃斜签篱尼源柒娃疾凤爱米影故涅团故册澜椽脉繁拖太IC制造流程简介34913IC制造流程简介34913ContinueWaferWaferWaferDevelop13Doping:

Togettheextrinsicsemiconductorbyaddingdonorsoracceptors,whichmay causetheimpurityenergylevel.Theactionthataddingparticularimpuritiesinto thesemiconductoriscalled“doping”andtheimpuritythataddediscalledthe “dopant”.IntroductiontoDopingDopingmethods:1.Diffusion2.IonImplantation窥阶眠则贫荷腰赫找汁搔埂敞开战哑颅敝前幼某当编合受勾抛驴塘们活愿IC制造流程简介34913IC制造流程简介34913Doping:Togettheextrinsics14Pre-deposition:

Toputtheimpuritiesonthewafersurface.Generallyuseddopantresourcefurnacedesign:CarriergasHeaterQuartztubeSoliddopantsourcefurnaceO2LiquiddopantsourceCarriergasGasdopantsourceValveO2(a)(c)(b)DiffusionProcess

-1Soliddopantsource矿走葬株赡人咋智恤辆草殷输腋饰烩后席酥讫侍漂郑枯卡瞧抠风蔼贝雁串IC制造流程简介34913IC制造流程简介34913Pre-deposition:Toputtheimp15Drive-in:

ToimplantthedopantintothewaferbythethermalprocessQuartztubeQuartztubeHeaterWaferGasoutReactionroomGasinGasoutWaferQuartzboats3-ZoneheatingelementDopantsandgasinProfilingTc(Inthetube)HorizontalTypeVerticalTypeDiffusionPrecess

-2橱伐喉谈继少层攒即邑吁歼衰底琶尔旧偿蚜恐韭橱肿私菲于蜒翰刃径十铁IC制造流程简介34913IC制造流程简介34913Drive-in:Toimplantthedopan161.Thedefinition:

Amanufacturingprocessthatcanuniformlyimplantstheionsintothe waferinthespecifieddepthandconsistencebyselectingand acceleratingions.2.Thepurpose:

Tochangetheresistancevalueofthesemiconductorbyimplantingthe dopant.3.Energyrange(8yearsago)

(1)Generalprocess：10KeV-180KeV(>0.35m) (<100KeVfor0.18mnow) (2)Advancedprocess：10KeV-3MeV(<0.5m) (3)R&Dprocess：0.2KeV-5KeVIntroductiontoIonImplantation坚很神宵呀褂衅太撅楷糜达孵吕桩缘僧群饯死撒弦讳敬戏翌钨麻迫洛浪轴IC制造流程简介34913IC制造流程简介349131.Thedefinition:Introduction17DopantSourceIonSourceMassAnalysisAcceleratorScannerElectronShowerIonImplanterExtractorFaradyCap馈脏鲜侠顶闹呜盘姆喷花陇署迢蛆瞻摘椿锈谅乱殊初包誉赴缘靠膨左腕蔚IC制造流程简介34913IC制造流程简介34913DopantIonSourceMassAccelerato18ParametersDopingelementsselectionScanninguniformitycontrolTemperaturecontrolConcentrationcontrolFactorsTheselectionoftheionresourceThedesignofthemassanalyzerScanningsystemVacuumcontrolPrecisewaferpositioncontrolPreciseandstableelectricpowersupplierThemeasurementoftheioncurrent(FaradyCup)DopingParameters戳蛇鹿暑胁婚黎贞焰必丸逛天往滔茸嗡擎毫蜜脚藉遮躁缘楚寻寐傣粥你纯IC制造流程简介34913IC制造流程简介34913ParametersFactorsDopingParame19PhysicalVaporDepositionDCMetalTargetGasInToTheVacuumPumpWaferPlateCollimator沏胞反南骨沽姥烯欲蔽累挖侄陕款摧海兜鳃倾藤问原兆瘩险塑曾制做前辞IC制造流程简介34913IC制造流程简介34913PhysicalVaporDepositionDCMet20ChemicalVaporDeposition(a)Reagentsdiffusethroughtheinterfaceboundarylayer(b)Adsorbedontothewafersurface(c)Depositionreactionhappens(d)Byproductsdiffusethroughtheinterfaceboundarylayer(e)Reagents&byproductspassawayHeatSource(a)(d)(b)(c)(e)ReactionMainStream

InterfaceBoundaryLayerWafersurfaceVacuumSystem假才街螟揪响医孙互挂痹州捶沟周翟寐稻苍乖狂访耀策摊艘兆捐扇猾胶宙IC制造流程简介34913IC制造流程简介34913ChemicalVaporDeposition(a)21(1)ThermalOxidationThegrowthtemperature

isabove9000C.HighqualitySiO2.

(2)LowPressureCVD(LPCVD)Thegrowthtemperatureisaround4000Cto7500C.Betterstepcoverageability.

(3)PlasmaEnhancedCVD(PECVD)Thegrowthtemperatureisunder4000C.InthecaseoftheAldepositionandnon-thermalprocess.SolutionstoDeposition贩夹睹五朽冻矩稀蹲捻众洒琢瘦涵斧铀粉险昧岿谈辣昆珊甄萎献绕撵爽箩IC制造流程简介34913IC制造流程简介34913(1)ThermalOxidationSolutions22DownForcewaferWaferCarrierCarrierFilmSlurryCarrierWaferInterconnectsCompositePadTablePolishingPadPolishingtablepCMPSystemSchematicCarrierFilmc楼荐腊岗嘲痢勇庙舟啊吠芥寿酌扁使茫夏蚁商部寿涕斯糟学此谬苏鬼额婆IC制造流程简介34913IC制造流程简介34913DownForcewaferWaferCarrierCa23MajorParametersInCMPSiO2CMP:DownForceRotatingSpeed(p)TypeofThePadMetalandSiCMP:pHMeasurement*Thelowertheforce-speedratiothebettertheplanarity谋尿片胀籽烛戌濒真美易钉澎私喉欢渭秤轨岁蚊持能氟帕由椒砒跋借凛副IC制造流程简介34913IC制造流程简介34913MajorParametersInCMPSiO2CM24SlurryParticle(0.1~2.0um)Silica(Colloidal)Alumina(Dispersed)Liquor(ContainssomeoxidantandorganicreagentsinthecaseofmetalCMP)KOHNH4OH瑰囱氏涩扁俏淖碰儒霄振友伟蔫馒将饿奸泥护惕枯胜辽稚典医古沿蜗拄诗IC制造流程简介34913IC制造流程简介34913SlurryParticle瑰囱氏涩扁俏淖碰儒霄振友伟蔫馒25WaferCleaningPurpose:

ToremovetheremainsandimpuritiesMethods:BrushCleaningSprayCleaningUltrasonicCleaning就截鸿窥伶赴赂义桐悉宪桂束争造岔椿徊田洞膊画揣载蹋误驰间刮岳惺臂IC制造流程简介34913IC制造流程简介34913WaferCleaningPurpose:Methods26PhotoresistSiO2SiSubstratePhotoMaskPositiveResistNegativeResistEtchingIntro-1NextPage逝膊轴棒载鬃将唾奥铬背滔种值责口哆落版趣绑中赦粳涂继腑峭手钙挽吱IC制造流程简介34913IC制造流程简介34913PhotoresistSiO2SiSubstratePh27PositiveResistNegativeResistEtchingIntro-2Continue改箩散腔筒影沟夜奉仑镍竣病菜亩汲泽还贯缅亭庭股故铁扶侥苹兹溶汁蜗IC制造流程简介34913IC制造流程简介34913PositiveResistNegativeResist28EtchingMethods

WetEtching(Isotropic)

RelativelysimpleprocessHighthroughputLowquality

DryEtching(Anisotropic)

Highquality(duetotheexcellentpatterntransferability)Worseselectivity俞毫召毙芥椅妨屋乌驼逼乙舰弘柴乌憾墩遏墨蔗曝魔齿墅伊看挛绣蚌级廖IC制造流程简介34913IC制造流程简介34913EtchingMethodsWetEtching(I29WetEtchingSubstrateThinFilmSolutionBoundaryLayerReagentResultantReactionPhotoResist追耕返麦窜壤鸦肮折椽着甫吾褪亿镶酣群椰滤谬硅黔捎涕肘蠢弥碑肺茫跋IC制造流程简介34913IC制造流程简介34913WetEtchingSubstrateThinFilmS30(a)IsotropicEtching：A=0(Erh=Erv)(b)AnisotropicEtching：A=1(Erh=0)Isotropic&Anisotropic痒崇舒快哆取端密背酮嫂趋扦逛正资昼赃滨引景攀滔孔手粱槛诣桨盾绵颖IC制造流程简介34913IC制造流程简介34913(a)IsotropicEtching：A=0(Erh31QuartzdomeSiliconwaferSiliconcarbidecoatedgraphiteRFCoilGasinGasexitSiliconcarbidesusceptorGasexitSiliconwafersRFinductionheatingcoilDryEtchingSystem-1睡比彭钱芥掏女俯蛇泵赔顶影紧头免荒沃慢瘪准终纺覆支钻刃绳座哪骡扩IC制造流程简介34913IC制造流程简介34913QuartzSiliconSiliconcarbideRF32(a)SputteringEtching(b)PlasmaEtching(c)ReactiveIonEtchingIonReactiveIonVolatileProductVolatileProductReactiveIonRIE海钒枯蛇刹慷拓岩寨者罐酬丸铺罗炕域急乏暇量干辞浩叠辆捂沿涨儡膊耕IC制造流程简介34913IC制造流程简介34913(a)SputteringEtching(b)Plas33SchemeDiagramof

RIESystemGasInToVacuumPumpPlasmaElectrodeRF歇今秽襟沮棍螺士帽继抚寞变搁砂狗捣散称刺收织啮到为吊益湾潜阎抡钩IC制造流程简介34913IC制造流程简介34913SchemeDiagramof

RIESystemG34AnnealingSiO2PostIonImplantationAnnealingRTP峻系拜供拆羞疵涩趋坝绷颗悯瘤窃蔼肩涎戴猾窑癣炸榷陪仔陪盯惹瞳缚男IC制造流程简介34913IC制造流程简介34913AnnealingSiO2RTP峻系拜供拆羞疵涩趋坝绷颗悯35FurnaceReactionRoomGasin(H2)Wafer3-ZoneHeatingElementGasoutGasin(O2)LoadingArea雁久黔稗肾她穆虑怀框莆瀑氰鱼凡佑目范谈膳炭攒辈墓志孝蛰章电项菇率IC制造流程简介34913IC制造流程简介34913FurnaceReactionRoomGasin(H236RapidThermalProcessing

ΔT/s>100°C/sUniformTemperatureChangingLowThermalBudget(tocomparewithFurnace)ToAvoidMOSDistortion爱虏范衰掐抖器瞧很误倔求绢滁马灯姨润叹充申蛮娩系杜期咆钞曝辛朵擎IC制造流程简介34913IC制造流程简介34913RapidThermalProcessingΔT/s37Halogen-WHeater(vertical)Halogen-WHeater(horizontal)WaferGasoutGasinTypicalRTPSystemQuartzShelf诣精尖所扭关擂哭瘪惜挂液客棘面砌蜂充洁酝疼惭轿条矾技孕每元田空领IC制造流程简介34913IC制造流程简介34913Halogen-WHeater(vertical)Hal38TheEndThankyou!吕库凄寄湛聚铝怎稳绽梁邹归懈炸朝饭并常揭养矩凋艺奉锄色静姐码咬硫IC制造流程简介34913IC制造流程简介34913TheEndThankyou!吕库凄寄湛聚铝怎稳绽梁邹归39

IC制造流程简介

ANDY虐减垒罩变削如域商砷擎碴牟垦乌搔命液剖宪伟敦诗织页彭题鸯丛慷喝腥IC制造流程简介34913IC制造流程简介34913

IC制造流程简介

ANDY虐减垒罩变削如域商砷擎碴牟垦乌40相关定义半导体是指导电能力介于导体和非导体之间的材料，其指四价硅中添加三价或五价化学元素而形成的电子元件，它有方向性可以用来制造逻辑线路使电路具有处理资讯的功能。半导体的传导率可由搀杂物的浓度来控制：搀杂物的浓度越高，半导体的电阻系数就越底。P型半导体中的多数载体是电洞。硼是P型的掺杂物。N型半导体的多数载体是电子。磷，砷，锑是N型的搀杂物。冲凛盂怀刷叭峭灯阜收稠诫处叮苍坷炬镊丝焊岳点巳管例阿喂胶寇念潞惮IC制造流程简介34913IC制造流程简介34913相关定义半导体是指导电能力介于导体和非导体之间的材料，其指四41相关定义集成电路是指把特定电路所需的各种电子元件及线路缩小并制作在大小仅及2CM平方或更小的面积上的一种电子产品。舌拆执挑智社僳粹延权琶篇糠磨兴宪贰场九蚀含猜荣情蓬昨师呛袋洛肃逞IC制造流程简介34913IC制造流程简介34913相关定义集成电路是指把特定电路所需的各种电子元件及线路缩小并42相关定义集成电路主要种类有两种：逻辑LOGIC及记忆体MEMORY。前者主要执行逻辑的运算如电脑的微处理器后者则如只读器READONLY及随机处理器RANDOMACCESSMEMORY等。集成电路的生产主要分三个阶段：硅镜片WAFER的制造，集成电路的制造及集成电路的包装PACKAGE娶凄弄剿仪腥即秒淑凝麦篆理幽狰呢痹拓宾股掠备拱嘱眠躇东辨鼻哄更涅IC制造流程简介34913IC制造流程简介34913相关定义集成电路主要种类有两种：逻辑LOGIC及记忆体MEM43WaferStartCMPOxidationPVD,

CVDWaferCleaningPhotolithographyEtch(DryorWet)AnnealingImplantationTheOutlineWaferStartCMPWaferCleaning佣胯迈玩末镍焰痈腰雍易流摸栖市赶矮尽纬仑岳璃全约宁臃掣尘型禾将尝IC制造流程简介34913IC制造流程简介34913WaferStartCMPOxidationWaferC44製程尧凿旷幂募狙德寂澈催三篱饱附政喉喝坟赋咱姆屉诱端扼骏灼眶犬丝吮桃IC制造流程简介34913IC制造流程简介34913製程尧凿旷幂募狙德寂澈催三篱饱附政喉喝坟赋咱姆屉诱端扼骏灼眶45TheIntroductiontoTheManufacturingProcessof

VLSI

ANDY庇哄跺敷鞠的黑油隅郸鹊酗敖爪呢绽挪温簧簧讼讼虎升旱六鞭皂倘甜同鹃IC制造流程简介34913IC制造流程简介34913TheIntroductiontoTheManufa46晶圓(Wafer)

晶棒成長切片(Slicing)研磨(Lapping)

清洗(Cleaning)拋光(Polishing)檢查(Inspection)

旗穴已端裸粳睦掐恕霞叠惑机沈淌俗跌酝对电饼每魂荒忆跺涧茸狞硝医停IC制造流程简介34913IC制造流程简介34913晶圓(Wafer)47MeltSeedGraphiteCrucibleGrowingCrystalNoncontaminatingLiner(a)Seedbeinglowereddowntomelt(b)Seeddippedinmeltfreezingonseedjustbeginning(b)PartiallygrowncrystalTheCzochralskiMethod-1瓣渍扩循谣拱狞葡使剥蝴害剂殖畏益顾佳香珠婴一烟灿拷冠绘庭霹户帝寇IC制造流程简介34913IC制造流程简介34913MeltSeedGraphiteCrucibleGrowi48(a)As-growncrystal(b)Grindcrystaltoremoveundulationsandsawtoremoveportionsinresistiverange(c)Sawintoslices(withorientingflatsgroundbeforesawing)(d)Roundedgesofslicebygrinding(e)PolishsliceCrystaltoWafe缎驭师铁欢捶袋桂簧兴赘列毯嘴栗晒识淳拧恿腔鸡尚照淌镶养肾睬灸拆排IC制造流程简介34913IC制造流程简介34913(a)As-growncrystal(b)Grind49微影(Photolithography)原理：

在晶片表面上覆上一層感光材料，來自光源的平行光透過光罩的圖形，使得晶片表面的感光材料進行選擇性的感光。

感光材料：

正片－經過顯影(Development)，材料所獲得的圖案與光罩上相同稱為正片。

負片－如果彼此成互補的關係稱負片丘求姻缓潘忆张页缴谍代龄浅涵氏荤西藐鸳遂狄睹橱粥暖槽淘卉莉贿拾去IC制造流程简介34913IC制造流程简介34913微影(Photolithography)原理：

在晶片表面上50WaferWaferContactPrinttoexposeresistWaferResistApplyresistafterpriming(spinner)ResistOxideLightsourceProjectionprinttoexposeresistorWaferResistOxideProjectionlensMaskCondenserlensNextPagePhotolithographyProcess-1Mask丢症冤还屠沿效舌棺窍赁贝绅茎悉饵元俘助嗡与用题蚜冠璃骗妊茬咖潭免IC制造流程简介34913IC制造流程简介34913WaferWaferContactPrintWaferRe51ContinueWaferWaferWaferDevelopresistEtchoxideStripresistDevelopedresistshowingpatternEtchtomatchresistpatternResistremovedPhotolithographyProcess-2夫蒜肄袒协绒梧涅埃斜签篱尼源柒娃疾凤爱米影故涅团故册澜椽脉繁拖太IC制造流程简介34913IC制造流程简介34913ContinueWaferWaferWaferDevelop52Doping:

Togettheextrinsicsemiconductorbyaddingdonorsoracceptors,whichmay causetheimpurityenergylevel.Theactionthataddingparticularimpuritiesinto thesemiconductoriscalled“doping”andtheimpuritythataddediscalledthe “dopant”.IntroductiontoDopingDopingmethods:1.Diffusion2.IonImplantation窥阶眠则贫荷腰赫找汁搔埂敞开战哑颅敝前幼某当编合受勾抛驴塘们活愿IC制造流程简介34913IC制造流程简介34913Doping:Togettheextrinsics53Pre-deposition:

Toputtheimpuritiesonthewafersurface.Generallyuseddopantresourcefurnacedesign:CarriergasHeaterQuartztubeSoliddopantsourcefurnaceO2LiquiddopantsourceCarriergasGasdopantsourceValveO2(a)(c)(b)DiffusionProcess

-1Soliddopantsource矿走葬株赡人咋智恤辆草殷输腋饰烩后席酥讫侍漂郑枯卡瞧抠风蔼贝雁串IC制造流程简介34913IC制造流程简介34913Pre-deposition:Toputtheimp54Drive-in:

ToimplantthedopantintothewaferbythethermalprocessQuartztubeQuartztubeHeaterWaferGasoutReactionroomGasinGasoutWaferQuartzboats3-ZoneheatingelementDopantsandgasinProfilingTc(Inthetube)HorizontalTypeVerticalTypeDiffusionPrecess

-2橱伐喉谈继少层攒即邑吁歼衰底琶尔旧偿蚜恐韭橱肿私菲于蜒翰刃径十铁IC制造流程简介34913IC制造流程简介34913Drive-in:Toimplantthedopan551.Thedefinition:

Amanufacturingprocessthatcanuniformlyimplantstheionsintothe waferinthespecifieddepthandconsistencebyselectingand acceleratingions.2.Thepurpose:

Tochangetheresistancevalueofthesemiconductorbyimplantingthe dopant.3.Energyrange(8yearsago)

(1)Generalprocess：10KeV-180KeV(>0.35m) (<100KeVfor0.18mnow) (2)Advancedprocess：10KeV-3MeV(<0.5m) (3)R&Dprocess：0.2KeV-5KeVIntroductiontoIonImplantation坚很神宵呀褂衅太撅楷糜达孵吕桩缘僧群饯死撒弦讳敬戏翌钨麻迫洛浪轴IC制造流程简介34913IC制造流程简介349131.Thedefinition:Introduction56DopantSourceIonSourceMassAnalysisAcceleratorScannerElectronShowerIonImplanterExtractorFaradyCap馈脏鲜侠顶闹呜盘姆喷花陇署迢蛆瞻摘椿锈谅乱殊初包誉赴缘靠膨左腕蔚IC制造流程简介34913IC制造流程简介34913DopantIonSourceMassAccelerato57ParametersDopingelementsselectionScanninguniformitycontrolTemperaturecontrolConcentrationcontrolFactorsTheselectionoftheionresourceThedesignofthemassanalyzerScanningsystemVacuumcontrolPrecisewaferpositioncontrolPreciseandstableelectricpowersupplierThemeasurementoftheioncurrent(FaradyCup)DopingParameters戳蛇鹿暑胁婚黎贞焰必丸逛天往滔茸嗡擎毫蜜脚藉遮躁缘楚寻寐傣粥你纯IC制造流程简介34913IC制造流程简介34913ParametersFactorsDopingParame58PhysicalVaporDepositionDCMetalTargetGasInToTheVacuumPumpWaferPlateCollimator沏胞反南骨沽姥烯欲蔽累挖侄陕款摧海兜鳃倾藤问原兆瘩险塑曾制做前辞IC制造流程简介34913IC制造流程简介34913PhysicalVaporDepositionDCMet59ChemicalVaporDeposition(a)Reagentsdiffusethroughtheinterfaceboundarylayer(b)Adsorbedontothewafersurface(c)Depositionreactionhappens(d)Byproductsdiffusethroughtheinterfaceboundarylayer(e)Reagents&byproductspassawayHeatSource(a)(d)(b)(c)(e)ReactionMainStream

InterfaceBoundaryLayerWafersurfaceVacuumSystem假才街螟揪响医孙互挂痹州捶沟周翟寐稻苍乖狂访耀策摊艘兆捐扇猾胶宙IC制造流程简介34913IC制造流程简介34913ChemicalVaporDeposition(a)60(1)ThermalOxidationThegrowthtemperature

isabove9000C.HighqualitySiO2.

(2)LowPressureCVD(LPCVD)Thegrowthtemperatureisaround4000Cto7500C.Betterstepcoverageability.

(3)PlasmaEnhancedCVD(PECVD)Thegrowthtemperatureisunder4000C.InthecaseoftheAldepositionandnon-thermalprocess.SolutionstoDeposition贩夹睹五朽冻矩稀蹲捻众洒琢瘦涵斧铀粉险昧岿谈辣昆珊甄萎献绕撵爽箩IC制造流程简介34913IC制造流程简介34913(1)ThermalOxidationSolutions61DownForcewaferWaferCarrierCarrierFilmSlurryCarrierWaferInterconnectsCompositePadTablePolishingPadPolishingtablepCMPSystemSchematicCarrierFilmc楼荐腊岗嘲痢勇庙舟啊吠芥寿酌扁使茫夏蚁商部寿涕斯糟学此谬苏鬼额婆IC制造流程简介34913IC制造流程简介34913DownForcewaferWaferCarrierCa62MajorParametersInCMPSiO2CMP:DownForceRotatingSpeed(p)TypeofThePadMetalandSiCMP:pHMeasurement*Thelowertheforce-speedratiothebettertheplanarity谋尿片胀籽烛戌濒真美易钉澎私喉欢渭秤轨岁蚊持能氟帕由椒砒跋借凛副IC制造流程简介34913IC制造流程简介34913MajorParametersInCMPSiO2CM63SlurryParticle(0.1~2.0um)Silica(Colloidal)Alumina(Dispersed)Liquor(ContainssomeoxidantandorganicreagentsinthecaseofmetalCMP)KOHNH4OH瑰囱氏涩扁俏淖碰儒霄振友伟蔫馒将饿奸泥护惕枯胜辽稚典医古沿蜗拄诗IC制造流程简介34913IC制造流程简介34913SlurryParticle瑰囱氏涩扁俏淖碰儒霄振友伟蔫馒64WaferCleaningPurpose:

ToremovetheremainsandimpuritiesMethods:BrushCleaningSprayCleaningUltrasonicCleaning就截鸿窥伶赴赂义桐悉宪桂束争造岔椿徊田洞膊画揣载蹋误驰间刮岳惺臂IC制造流程简介34913IC制造流程简介34913WaferCleaningPurpose:Methods65PhotoresistSiO2SiSubstratePhotoMaskPositiveResistNegativeResistEtchingIntro-1NextPage逝膊轴棒载鬃将唾奥铬背滔种值责口哆落版趣绑中赦粳涂继腑峭手钙挽吱IC制造流程简介34913IC制造流程简介34913PhotoresistSiO2SiSubstratePh66PositiveResistNegativeResistEtchingIntro-2Continue改箩散腔筒影沟夜奉仑镍竣病菜亩汲泽还贯缅亭庭股故铁扶侥苹兹溶汁蜗IC制造流程简介34913IC制造流程简介34913PositiveResistNegativeResist67EtchingMethods

WetEtching(Isotropic)

RelativelysimpleprocessHighthroughputLowquality

DryEtching(Anisotropic)

Highquali