内容讲稿模板-2016届

1、20166 20166 中BACHELORSDEGREEOFHOHAIFailure Simulation ingBACHELORSDEGREEOFHOHAIFailure Simulation ingoferfaceofGaNer College：Mechanical and Electrical Major：Mechanical Engineering and Name：Zhao Directedby：Dr.FanNANJING本人呈交的毕业设计)，是在导师的指导下，独立进行本人呈交的毕业设计)，是在导师的指导下，独立进行究工作所取得的成果，所有数据资料真实可靠。尽我所除文中已经注的内容外

2、，本设计）的研究成果不他人享有著作权的内容。对本设计）所涉及的研究工作贡献的其他个人和集体，均已在文中以明确的方式标明。本设计（）的知归属于培。本人签名摘要 本GaN GaN 摘要 本GaN GaN AuSn 共晶界面结构模型，考、焊料和基板材料等影，采用仿真技术模了2 种以上冷热循环负载条件下固晶界面的机械性能和散AuSn ：GaN 基第三代半导体，AuSn 焊料，共晶界面，ANSYS IIGaN and SiC, representing the third generation semiconductor material, good physical and chemical prop

3、erties with wider band gap, higher thermal conductivity and higherGaN and SiC, representing the third generation semiconductor material, good physical and chemical properties with wider band gap, higher thermal conductivity and higher dielectric constant. They has a very broad prospect in optoelectr

4、onic , high-temperature and er fabrication er device applications. As an indispensable material for er , the solder is to connect plays the semiconductor chip and components of the device, and the solder ofmechanicalsupport,electricalconnectionandheatThis study the research history, application fiel

5、ds and development prospects of GaN materials. The AuSn erface of the third generation of microwave er device was selected as the research object of this study and the AuSn structure was established with considering of the effects of the chip, solder substrate materials. The mechanical performance a

6、nd heat dissipation (including the chip junction temperature, substrate temperature, and so on) of erface can be predicted with the ANSYS simulation his study, the considered n two kinds of thermal cycle load conditions ming. This egratesthemulti-disciplinary knowledge (such as physics, materials science, etc.) and use ANSYS simulation to optimize the design materials . Based on the results, the failure mechanisms of erfaceunderthedesignedthermalc