高密度等离子体ICP-180刻蚀总结

1、Date Run Full Bare Bare Pattern Pattern 02 C4F8 Pressure RF ICP Temp Time He He Flow4 inch SiO2 SiNx SiO2 Si (seem) (seem) (mTorr) (W)(W)(C) (min)仃 orr) (seem)run21 higher pressure & RFsame with run285-Sep-1329曙10150150050|0.5104.2run 28 higher C4F85-Sep-1329-2 曙10150150050 I 0.50104.2same with

2、run296-Sep-1330 j曙4130250050|0.5104run24 lower RF6-Sep-1330-2 曙4130250050|0.5104.3bare SiN same with run306-Sep-1331曙4150250050|0.5104.3pattern wafer same with run2440.856BF70466895681470006965SiO2/PR0.4NAF27962450252427202689Etch4250444542904280427728722.26%PRBF26263260352553825903263211.32AF229652

3、2944224442267522713Etch32983091309432283608217642.253BFSiO2/Si0.4NAF2.91Etch9993952610020999298859882.50%43.157BF40254030411040804092SR=0.5NAF10981043111310841153SiO2/SiNxEtch2927298729972996293919791.19%41.156BF106710631071107910741.200.5NAF243248256249250Etch823.6815815.3829.9823.716430.91%42.233B

4、F40304065410740704088SR=0.5NAF16001642169816201663SiO2/SiNxEtch2430242324092450242516180.84%41.133BF106310581069107610731.240.5NAF408422424413420Etch65563664566365313012.08%3174BF40144003404340264045SR=0.5NAF12151033116311551235SiO2/SiNxEtch2799297028802871281019112.98%29.570BF106910751079108610791.

5、130.5NAF219225237227236Etch85085084285984316981.00%40.44.6BF40273910384439783984SR=0.4NAF32983226315932683287SiO2/SiNxEtch729.4684685.2709.3696.914023.24%40.44.6BF106110691082107510731.240.4NAF484.3529.7520.5492.9513.7Etch576.6539.5561582.2559.611283.79%415BF32983226315932683287SR=AF2839294227632823

6、2861SiO2/SiNxEtch458.3284.4396.5445.3426.4804111111111111 11 11 11 1139.65BF484.3529.7520.5492.9513.72.25AF209.3478.9325.5294.7340Etch27550.8195198.2173.7357111111111111 11 11 11 1130.957BF134214961482139013901 SR=1(deg) (V)T C BLR (A/min) <? 3%(mTorr)SiO2/SiNxAPC DC BiasEtch Depth / (A)Etch Rate

7、 U% Selectivity CM offsetGlued RemarkSR=AF400501511423451SiO2/SiNxEtch94299597196793919262.91%29.855BF103810441049105310531.20AF226262259238237Etch81278279081581616062.12%30.836BF41174083414541274145SR=AF33663339342533733398SiO2/SiNxEtch75174472075474714862.29%29.634BF104410461055105710511.27AF44249

8、9482456456Etch60254757360159511674.71%43.343BF33663339342533733398SR=AF23682365242923842421SiO2/SiNxEtch99897499698997719741.22%40.443BF104910481059105010511.30AF274321306293276Etch77572775375777515153.17%4287BF23682365242923842421SR=AF1013982106910071061SiO2/SiNxEtch1355138313601377136027341.02%408

9、7BF196019491969197419731.26AF868878883880874Etch1092107110861094109921771.29%43.1123BF41304096414541384153SR=AF27362642273727162786SiO2/SiNxEtch1394145414081422136728183.09%40.5123BF197019651986198719821.15AF739755761749750Etch1231121012251238123224541.14%46.49BF1013982106910071061SR=AF5195916265195

10、89SiO2/SiNxEtch494391443488472915ii ii ii ii iiii ii ii ii ii43.88BF7397557617497501.94AF465603540492477Etch274152221257273471ii ii ii ii iiii ii ii ii ii41.867BF24072296241424142458SR=AF15561360151314991591SiO2/SiNxEtch85193690191586717884.75%39.666BF8688788838808741.16AF225219251242238Etch64365963

11、263863615402.10%154.268BF15561360151314991591SR=AF35826250261382SiO2/SiNxEtch1198133412631238120924975.45%47.868BF197219711989198919861.08AF845765838837859Etch1127120611511152112723053.43%43.343BF26522479261926342692SR=AF19581938199119462007SiO2/SiNxEtch6945416286886851294ii ii ii ii iiii ii ii ii i

12、i40.443BF8938338979019131.37AF364493442394388Etch529340455507525942ii ii ii ii iiii ii ii ii ii39.946BF28032459253527332701SR=AF1250910102711851167SiO2/PREtch1553154915081548153430771.46%PRBF22187220692124221767215421.45AF2097921106202382068920487Etch12089631004107810552123ii ii ii ii iiii ii ii ii ii39.946BF28032459253527332701SR=AF1250910102711851167SiO2/SiNEtch1553154915081548153430771.46%40.443BF104910481059105010512.03AF274321306293276Etch77572775375777515153.17%41.635BF19581938199119462007SR=AF98095410449351010SiO2/SiNxEtch978984947101199719673.25%39.333B