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1、SD175SA30C中文资料SENSITRONSEMICONDUCTORSD175SA30A/B/CTechnical DataData Sheet 505, Rev.-SILICON SCHOTTKY RECTIFIER DIEVery Low Forward Voltage DropApplications:? Switching Power Supply ? Converters ? Free-Wheeling Diodes ? Polarity Protection DiodeFeatures:? Soft Reverse Recovery at Low and High Temper
2、ature? Very Low Forward Voltage Drop? Low Power Loss, High Efficiency? High Surge Capacity? Guard Ring for Enhanced Durability and Long Term Reliability? Guaranteed Reverse Avalanche Characteristics? Electrically / Mechanically Stable during and after PackagingMaximum Ratings(1):Characteristics Symb
3、ol Condition Max. UnitsPeak Inverse Voltage V RWM- 30VMax. Average Forward Current I F(AV)50% duty cycle, rectangularwave form30 AMax. Peak One Cycle Non-Repetitive Surge CurrentI FSM8.3 ms, half Sine wave (1)570 ANon-Repetitive Avalanche Energy E AS T J = 25 C, I AS = 10 A,L = 0.90 mH45 mJRepetitiv
4、e Avalanche Current I AR I AS decay linearly to 0 in 1 s? limited by T J max V A=1.5V R10 AMax. Junction Temperature T J- -65 to +150 CMax. Storage Temperature T stg- -65 to +150 C Electrical Characteristics(1):Characteristics Symbol Condition Max. UnitsMax. Forward Voltage Drop V F1 30A, Pulse, T J
5、 = 25 C 0.49 VV F2 30A, Pulse, T J = 125 C 0.39 V Max. Reverse Current I R1V R = 30V, Pulse,T J = 25 C4.0 mAI R2V R = 30V, Pulse,T J = 125 C200 mAMax. Junction Capacitance C TV R = 5V, T C = 25 Cf SIG = 1MHz,V SIG = 50mV (p-p)2200 pF(1) in SHD packageSENSITRONSEMICONDUCTOR SD175SA30A/B/CData Sheet 5
6、05, Rev.- Mechanical Dimensions: In Inches / mm0.175 0.003(4.45 0.08)0.163 0.003 (4.14 0.08) H Bottom side metalization Ag - 30 k? minimum.Top side metalization Al - 25 k? minimum or Ag - 30 k? minimum.Bottom side is cathode, top side is anode.Dimension H = 0.0105 0.001 (0.27 0.026) for Al top;Dimen
7、sion H = 0.0155 0.001 (0.39 0.026) for Ag top. 0.00.10.20.30.40.50.6Forward Voltage Drop - V F (V)10-1100101I n s t a n t a n e o u s F o r w a r d C u r r e n t - I F (A )Typical Forward Characteristics 10203040Reverse Voltage - V R (V)10-210-110 101102103I n s t a n t a n e o u s R e v e r s e C u
8、 r r e n t - I R (m A )Typical Reverse Characteristics 10203040Reverse Voltage - V R (V)100012021400160018002021J u n c t i o n C a p a ci t a n c e - C T (p F )Typical Junction CapacitanceSENSITRONSEMICONDUCTORTECHNICAL DATADISCLAIMER:1- The information given herein, including the specifications an
9、d dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).2- In cases where extremely high reliability is required (such as use
10、 in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement.3- In no event shall Sensitron Semicondu
11、ctor be liable for any damages that may result from an accident or any other cause during operation of the users units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info
12、rmation, products or circuits described in the datasheets.4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating.5- No license is granted by the datasheet(s) under an
13、y patents or other rights of any third party or Sensitron Semiconductor.6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor.7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they
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