铜线键合论文：铜线键合技术及设备的研究与应用

1、 铜线键合论文：铜线键合技术及设备的研究与应用【中文摘要】引线键合技术是微电子封装中非常关键的一步,在传统的封装工艺中键合引线通常以金线为主。金线以其良好的导电性能、延展性和化学稳定性而被广泛应用于几乎所有高级ic封装中。然而随着金价的持续攀升,以铜线为键合引线的封装工艺逐渐成为业界的首选并逐渐有取代金线工艺之势,尽管如此,由于铜线材料本身的两大特性高硬度和易氧化造成了铜线焊接性能的不稳定即烧球时容易产生铜球的氧化和容易造成第一点焊接的焊盘损伤,硅弹坑和铝层喷溅等失效模式;另外尽管目前大多数设备制造商能够直接生产铜线专用设备,但是大部分老式的引线键合设备都是金线工艺,如果要发展铜线工艺必须进行

2、相应的改造,因此铜线设备的升级也成为了发展铜线工艺的一个障碍。本论文正是针对上述几个问题以研究应用为最终,以实验数据和理论分析为判断依据,通过对铜线设备的升级和验收以及对铜线工艺失效模式的深入分析,对上述问题进行了创新性和探索性研究。其主要内容为:1.详细研究了当前主流键合引线的使用材料和适用范围及三种相关的键合技术的区别及当前铜线工艺技术的市场发展状态,发展铜线的成本优势和铜线相对于金线的性能优势。2.详细研究了由传统的金线工艺设备升级为铜线键合工艺所需要的技术条件特别是铜球的防氧化设计,线夹系统的校正和打火系统的升级;另外研究总结了金线转铜线设备的升级步骤和注意的项目特别是对整个升级后的键

3、合系统需要进行全面的校正。3.详细研究了铜线键合工艺中容易造成的严重的失效模式即焊盘损伤,硅弹坑和铝层喷溅及其产生机理;研究了铜焊接中自由空气球的重要的影响因素和关键参数及其对铜焊接的影响,最后还研究了第一点焊接和第二点焊接的失效模式的影响因素和重要参数。4.重点讨论了评估铜线键合质量的两种破坏性测试的方法和结果分析及铜线键合未来的发展方向。【英文摘要】wire bonding is one key process in the integrated circuit devices assemble, usually, the bonding wire is golden wire in th

4、e traditional assemble process. the golden wire is almost applied in all the advanced ic assemble process by itsbetter conductivity, elongation and chemical stability. however, with the gold-prices going up, the assemble process using the copper wire as the bonding wire gradually become the first ch

5、oice in the industry, although, the two fatal weakness which are higher hardness and easy oxidation for copper wire result in the bonding process in the instability status, as a result, the bonding ball is easily becoming oxidation in efo and the failure mode also easily occur at the first bonding a

6、s pad peeling, silicon crater and al squeeze out; further more, most old wire bonding equipment is golden wire process although many equipment manufacturer can install the copper wire machine. so, if developing the copper wire process, the current wire bonding equipment must be updated, which is ano

7、ther obstacle to expand the copper wire process. in this thesis, the above-mentioned two issues has been studied which are put in practice as purpose, the experiment data and theory analysis are used as the judgment, through the upgrade for the copper wire equipment and the deep analysis for the cop

8、per wire process failure mode, the novel materials and process are explored and researched for the two issue. the main research contents as follows:1.detailed discussed the bonding wire materials type, applicable situation, three type wire bonding technologys difference and introduced the market sta

9、tus for the copper wire, the copper wires cost advantage and the bonding ability advantage.2.detailed researched the technical condition upgrading the wire bonding equipment from golden wire process to the copper wire process, especial the bonding ball anti-oxidation design, wire clamper calibration

10、 and efo system upgrade, then studied the whole upgrade procedure and the related item especial the total equipment calibration.3.detailed explored the critical failure mode and the formation mechanism as pad peeling ,silicon crater and al squeeze out, then investigated the air free balls affection

11、factor and itsinfluence on the copper wire bonding process, at last researched failure mode affection factor and key parameter for the first bond and the second bond.4.discussed the two destructive test methods, result analysis to evaluate the copper wire bonding quality and the future develop trend

12、 for copper wire bonding.【关键词】铜线键合 硅弹坑 破坏性测试【英文关键词】copper wire bonding silicon crater destructive test【目录】铜线键合技术及设备的研究与应用摘要4-5abstract5-6第一章 绪论10-161.1 主要键合材料介绍10-121.1.1 金线10-111.1.2 铝线111.1.3 铜线11-121.2 键合工艺技术的介绍12-141.2.1 超声键合121.2.2 热压键合121.2.3 热超声键合12-141.3 铜线键合工艺的应用前景14-151.4 本课题来源及研究目的15-161.

13、4.1 本课题研究来源151.4.2 本课题研究目的15-16第二章 铜线键合技术的优劣16-262.1 铜线键合技术概况16-172.2 发展铜线键合工艺的优势17-222.2.1 铜线的成本优势17-182.2.2 铜线的性能优势18-222.3 铜线键合工艺的问题22-242.3.1 铜线的硬度问题22-232.3.2 铜线的氧化问题23-242.4 总结24-26第三章 铜线键合技术设备问题的研究与解决26-453.1 金线设备升级铜线的问题研究26-383.1.1 铜球的防氧化设计26-353.1.1.1 防氧化气体的比例26-293.1.1.2 防氧化气体出口管路设计29-323.

14、1.1.3 防氧化气体的流量研究32-353.1.2 铜线线夹的升级35-363.1.3 铜线键合的打火系统研究36-383.2 金线设备转铜线的升级与改造38-443.2.1 硬件设施的准备与安装38-393.2.2 铜线键合系统的校正39-443.2.2.1 超声功率的校正39-403.2.2.2 键合压力的校正40-413.2.2.3 线夹张力的校正41-423.2.2.4 轴运动控制的校正42-443.3 研究总结44-45第四章 铜线键合技术工艺问题的研究与解决45-674.1 铜线键合的失效模式的研究45-494.2 铜线键合的自由空气球参数研究49-554.2.1 efo cur

15、rent 和fab size 对铜球的影响49-514.2.2 efo gap 对铜球的影响51-524.2.3 tail extension 对铜球的影响52-554.3 铜线键合工艺的焊接参数研究55-664.3.1 焊盘键合问题及参数的实验研究55-614.3.1.1 铜线硬度的影响55-564.3.1.2 焊接参数的影响56-594.3.1.3 焊接温度的影响59-604.3.1.4 研究小结60-614.3.2 引脚键合问题及实验研究61-664.3.2.1 二点焊接参数的影响61-634.3.2.2 焊接工具-劈刀的影响63-654.3.2.3 焊接温度的影响65-664.4 研究总结66-67第五章 铜线键合破坏性测试