ZAO薄膜论文：射频反应磁控溅射制备ZAO薄膜及其光电性质研究.doc

ZAO薄膜论文：射频反应磁控溅射制备ZAO薄膜及其光电性质研究【中文摘要】本文采用RF反应磁控溅射技术在不同制备条件下生长了A1掺杂ZnO薄膜(ZAO)。研究了不同ZAO薄膜的晶体结构、表面形貌、电学以及光学性质,为开发ZAO薄膜在TCO材料领域的应用提供实验依据和理论指导。原子力显微镜(AFM)测试结果表明,Al掺杂使薄膜平均粒径明显减小,尺寸分布均匀、致密,表面粗糙度降低；X射线衍射(XRD)结果显示,薄膜沿(002)晶面择优取向生长。当Ar/q流量比为1：1时,薄膜具有相对最好的结晶取向性,并显示沿薄膜表面的压应力及沿C轴张应力。光电性质研究结果表明,薄膜电阻主要由晶界电阻决定,并且导电性随Ar/O2比中O2含量增加而减小。薄膜具有强烈的紫外吸收特性,带隙大多超过3.3eV,可见光区的透明性大于80%,并且透过率和Eg随Ar/O2比中为O2含量的增加而增加,薄膜在紫光区域具有较强的光致发光特性,掺铝使光发射峰增强并蓝移。【英文摘要】In different condition, the preparation, structure and optical properties of ZAO films prepared by RF-magnetron sputtering were studied.The structural characteristics, application development of ZAO film by RF-magnetron sputtering and the principle and characteristics of Magnetron sputtering were introduced. In our experiments, we observe the properties of the ZAO films through changing the process parameters of the experiments. It is founded that the orientation and the crystallization are more outstanding when the parameters are 200,90W, argon oxygen ratio 1:3. When ZnO was doped by aluminum, grain size of the films become small, the conductivity of ZAO film is more better than the films which is not doped by Al.We mainly discussed the optical electrical properties of the ZAO films. The influence of argon oxygen ratio, substrate temperature, sputtering time for ZAO film were discussed. Through a lot of experiments of testing the nature of ZAO films, the excellent preparation parameters were determined, and we got better properties films, and these provided the theory basis and the reference value for the application of ZAO films in the material field of TCO films.【关键词】ZAO薄膜 磁控溅射 结构 光电性质【英文关键词】ZAO film magnetron sputtering optical and electrical properties structure【备注】索购全文请搜“中国学术发表网”同时提供论文辅导写作和学术期刊论文发表服务。【目录】射频反应磁控溅射制备ZAO薄膜及其光电性质研究摘要5-6Abstract6第1章 引言9-151.1 综述9-101.2 ZAO薄膜的结构特性10-121.3 ZAO薄膜的应用研究进展12-141.3.1 太阳能电池121.3.2 节能视窗和热镜12-131.3.3 低辐射玻璃131.3.4 平板显示器131.3.5 传感器131.3.6 抗静电涂料131.3.7 其他应用13-141.4 本课题的研究内容及其意义14-15第2章 射频反应磁控溅射法制备ZAO薄膜及其表征15-322.1 ZAO薄膜的制备方法综述15-212.1.1 喷雾热解法15-172.1.2 脉冲激光沉积17-182.1.3 金属有机化学气相沉积18-192.1.4 分子束外延法19-202.1.5 溶胶凝胶法(Sol-gel)20-212.2 磁控溅射技术沉积ZAO薄膜的基本原理和特点21-232.2.1 磁控溅射镀膜原理21-222.2.2 磁控溅射镀膜特点22-232.3 ZAO薄膜的制备23-242.4 不同薄膜的表面形貌24-262.5 不同ZAO薄膜的晶体结构26-312.5.1 XRD测量原理26-272.5.2 不同ZAO薄膜晶体结构的XRD分析27-312.6 本章小结31-32第3章 射频反应磁控溅射生长ZAO薄膜电学性质32-403.1 工作气体(Ar)与反应气体(O_2)流量比对ZAO薄膜电学性质的影响32-373.1.1 I-V特性研究32-333.1.2 薄膜表面电阻分析33-343.1.3 ZAO薄膜的阻抗谱分析34-373.2 不同衬底温度和溅射时间对ZAO薄膜电学性质的影响37-393.2.1 不同衬底温度下生长ZAO薄膜I-V特性曲线37-383.2.2 不同溅射时间下生长ZAO薄膜的I-V特性曲线38-393.3 本章小结39-40第4章 RF反应磁控溅射生长ZAO薄膜的光学性质40-464.1 不同Ar/O_