标准解读
《GB/T 44515-2024 微机电系统(MEMS)技术 MEMS压电薄膜机电转换特性测量方法》是一项国家标准,旨在为MEMS压电薄膜器件的机电转换性能提供统一、规范的测试方法。该标准适用于各类基于压电效应工作的微机电系统中的薄膜材料,如传感器、执行器等,其核心在于定义了一系列关于如何准确评估这些材料或结构在特定条件下将机械能转化为电能(反之亦然)效率的具体步骤和技术要求。
根据文档内容,它首先明确了适用范围和术语定义,确保行业内对关键概念有一致理解。接着,详细描述了实验所需设备及其精度要求,包括但不限于信号发生器、示波器、力传感器等,并规定了环境条件控制的重要性,比如温度、湿度等因素可能对测试结果产生的影响。此外,还特别强调了样品准备过程中的注意事项,以保证测试数据的有效性和可重复性。
对于实际测量流程,《GB/T 44515-2024》提供了详细的指导原则,涵盖从初始设置到最终数据分析的全过程。这包括如何施加激励信号、记录响应信号以及计算相关参数的方法。同时,也指出了可能出现的数据异常情况及处理建议,帮助研究人员更好地理解和分析实验结果。
如需获取更多详尽信息,请直接参考下方经官方授权发布的权威标准文档。
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- 2024-09-29 颁布
- 2025-01-01 实施




文档简介
ICS31.080.99
CCSL59
中华人民共和国国家标准
GB/T44515—2024/IEC62047⁃30:2017
微机电系统(MEMS)技术
MEMS压电薄膜机电转换特性测量方法
Micro⁃electromechanicalsystem(MEMS)technology—Measurementmethodsof
electro⁃mechanicalconversioncharacteristicsofMEMSpiezoelectricthinfilm
(IEC62047⁃30:2017,Semiconductor—Micro-electromechanicaldevices—
Part30:Measurementmethodsofelectro⁃mechanicalconversion
characteristicsofMEMSpiezoelectricthinfilm,IDT)
2024⁃09⁃29发布2025⁃01⁃01实施
国家市场监督管理总局
国家标准化管理委员会发布
GB/T44515—2024/IEC62047⁃30:2017
目次
前言··························································································································Ⅲ
1范围·······················································································································1
2规范性引用文件········································································································1
3术语和定义··············································································································1
4MEMS压电薄膜试验台······························································································1
4.1总则·················································································································1
4.2功能模块和组件··································································································3
5被测薄膜·················································································································4
5.1通则·················································································································4
5.2测量原理···········································································································4
5.3正横向压电系数的测量流程···················································································4
5.4逆横向压电系数的测量流程···················································································4
6测试报告·················································································································5
附录A(资料性)MEMS压电薄膜测量方法的示例·····························································7
A.1概述·················································································································7
A.2样品制备流程·····································································································7
A.3测量流程···········································································································7
A.4测试报告·········································································································10
A.5中性面的方程···································································································12
参考文献····················································································································13
Ⅰ
GB/T44515—2024/IEC62047⁃30:2017
前言
本文件按照GB/T1.1—2020《标准化工作导则第1部分:标准化文件的结构和起草规则》的规
定起草。
本文件等同采用IEC62047⁃30:2017《半导体器件微机电器件第30部分:MEMS压电薄膜机
电转换特性测量方法》。
本文件做了下列最小限度的编辑性改动。
——为与现有标准协调,将标准名称改为《微机电系统(MEMS)技术MEMS压电薄膜机电转换
特性测量方法》。
——增加了3.2和3.3的注释。
——对图1进行了进一步标注,使得表1的描述与图1相对应。依据中文行文中图与表述位置接
近的原则,将图1的解释说明“MEMS压电薄膜横向压电系数试验台的功能模块或组件的基
本构成见图1”调整至图1出现的位置前后,即4.1处。
6a)11c(min)c()c(max)c()
——更正了第章)中“e31,f”,改为“e31,fVin,min”,更正“e31,f”为“e31,fVin,max”。
6b)3ed31fdec31fminc()ec31
——更正了第章)中“,”,改为“e31,f”,更正“,()”为“e31,fVin,min”,更正“,
fmaxc()
()”为“e31,fVin,max”。
6b)4ec31f0c()
——更正了第章)中“,()”,改为“e31,fVin,0”。
A.3.2c()c()10.0N/Vm15.0N/Vm
——更正了中“e31,fVin,0和e31,fVin,max可分别确定为和”,改为
|c()|c()|10.6N/Vm15.0N/Vm
“e31,fVin,0和|e31,fVin,max可分别确定为和”。
A.3d
——更正了表正横向压电系数计算结果“e31,f”,改为负值。
A.611c(min)c()c(max)c()
——更正了表第项中“e31,f”,改为“e31,fVin,min”,更正“e31,f”为“e31,fVin,max”。
请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。
本文件由全国微机电技术标准化技术委员会(SAC/TC336)提出并归口。
本文件起草单位:北京自动化控制设备研究所、安徽奥飞声学科技有限公司、芯联集成电路制造股
份有限公司、中机生产力促进中心有限公司、苏州大学、无锡华润上华科技有限公司、太原航空仪表有
限公司、中国航天科工飞航技术研究院、山东中康国创先进印染技术研究院有限公司、深圳市美思先
端电子有限公司、北京遥测技术研究所、西安交通大学、北京晨晶电子有限公司、上海新微技术研发中
心有限公司、天津新智感知科技有限公司、上海芯物科技有限公司、天津大学、北京大学、河北初光汽车
部件有限公司、共达电声股份有限公司、河南芯睿电子科技有限公司、广东润宇传感器股份有限公司、
华景传感科技(无锡)有限公司。
本文件主要起草人:王永胜、张红宇、安志武、李根梓、张菁华、孙立宁、苏翼、张新伟、李拉兔、
刘会聪、邢文忠、徐堃、毛志平、路文一、单伟中、许克宇、王志广、汤一、要彦清、娄亮、郑冬琛、陈得民、
姚鹏、胡晓东、卢弈鹏、袁长作、仲胜利、侯杰、陈福操、李树成、王志宏。
Ⅲ
GB/T44515—2024/IEC62047⁃30:2017
微机电系统(MEMS)技术
MEMS压电薄膜机电转换特性测量方法
1范围
本文件描述了用于压电式微传感器和微执行器等器件的压电薄膜机电转换特性测量方法。
本文件适用于
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