大二模拟电路

HuazhongUniversityofScienceandTechnology

TheDepartmentofElectronicsandInformationEngineering

ElectronicCircuitAnalysisandDesign

Dr.TianpingDeng

Email:

dengtp@

Contents

PART1

SEMICONDUCTORDEVICESANDBASICAPPLICATIONS

Chapter1

Chapter2

Chapter3

Chapter4

Chapter5

Chapter6

Chapter7

Chapter8

SemiconductorMaterialsandDiodesDiodeCircuits

TheField-EffectTransistor

BasicFETAmplifiers

TheBipolarJunctionTransistorBasicBJTAmplifiersFrequencyResponse

OutputStagesandPowerAmplifiers

PART2

ANALOGELECTRONICS

Chapter9

Chapter10

Chapter11

Chapter12

Chapter13

Chapter14

Chapter15

IdealOperationalAmplifiersandOp-AmpCircuitsIntegratedCircuitBiasingandActiveLoadsDifferentialandMultistageAmplifiers

FeedbackandStabilityOperationalAmplifierCircuits

NonidealEffectsinOperationalAmplifierCircuits

ApplicationsandDesignofIntegratedCircuits

Next,wewillstudych1,

Youmustlearn:

P7-14P20-28P30-38P39-44

P47-49

Ch1.

SemiconductorMaterialsandDiodes

1.1

1.2

SemiconductorMaterialsandProperties

ThePNJunction

1.3

DiodeCircuitsDCAnalysisandModels

1.4

DiodeCircuitsACEquivalentCircuit

1.5

1.6

OtherDiodeTypes

DesignApplication:DiodeThermometer

1.7Summary

1.1

SemiconductorMaterialsandProperties

1.1.1

1.1.2.

IntrinsicSemiconductor

ExtrinsicSemiconductor

N-typesemiconductor

P-typesemiconductor

Ch1.

SemiconductorMaterialsandDiodes

1.1

SemiconductorMaterialsandProperties

1.1.1.

IntrinsicSemiconductor（P8)

Materials

electriccurrentcanflowfreelyMetalssuchascopper

Glass,plastics,ceramics

Conductor

:Lowresistivity

Insulator

:Highresistivity

Semiconductor

:silicon,germanium,galliumarsenide

砷化镓

Conductivityliesbetweenthatofconductorsandinsulators

Anintegratedcircuit(IC)orotherelectroniccomponent

containingasemiconductorasabasematerial.

P8T1.1

SiliconValley

PeriodicTableoftheElements

PeriodicTableoftheElements

1.1.1

IntrinsicSemiconductor

1.

Silicon,

germanium single-crystal

structure

AttemperatureT=0oK,siliconisaninsulator.

valenceelectrons

Theelectronsintheoutermostshell

中子

质子

1.1.1

IntrinsicSemiconductor

EachSiatomsharesoneelectronwitheachofitsfournearestneighborssothatitsvalenceband

willhaveafull8electrons.

1.1.1 IntrinsicSemiconductor

WhenTincreases,freeelectronsand“holes”arecreated

1.1.1 IntrinsicSemiconductor

浓度

Inpuresemiconductor,theconcentrationofelectrons

andholesareequal,andverysmall,soitconductivity.

hasverysmall

electron-holepairs

1.1.1

IntrinsicSemiconductor

IntrinsicCarrierConcentration（P10）

Eg

nBT32e2kT

i

B–coefficientrelatedtospecificsemiconductor

T–temperatureinKelvin

Eg–semiconductorbandgapenergy

k–Boltzmann

constant

n(Si,300K)1.5x1010cm3

i

1.1.1

IntrinsicSemiconductor

TwotypesofCarriers

•

Freeelectron---

producedbythermalionization.

Itcanmovefreelyinthelatticestructuresoastoformcurrent.

•

Hole---

emptypositioninbrokencovalentbond.Itcanbefilledbyfreeelectron(recombination).

Afreeelectronisnegativechargeandaholeispositivecharge.

•

1.1.1

IntrinsicSemiconductor

Empty

space

Empty

space

Empty

space

Emptyspace

Aholecanberegardedasapositivechargecarrier

Doestheholecanmovethroughthecrystalfreely?

1.1.1

IntrinsicSemiconductor

1.1.2.

ExtrinsicSemiconductor(P11)

Theelectronandholeconcentrationsinanintrinsicsemiconductorarerelatively

small.

The

concentrationscanbegreatly

increasedbyaddingcontrolledamounts

ofcertainimpurities.

杂质

1.1.2.

ExtrinsicSemiconductor

DopedSemiconductor——ntype

Si Si Si 施主

FreeE

Donor

Si ＋SPi Si

boundcharge

Si Si Si 束缚电荷

1.1.2.

ExtrinsicSemiconductor

1.phosphorus+silicon=N-typesemiconductorHolespresentbecauseofthermalenergy

Whatarethemajoritycarriersinn-typematerials?

•

Whataretheminoritycarriersinn-typematerials?

N-typesemiconductormaterial

(phosphorus)

donor:providefreeelectrons

majoritycarrier–electrons

minoritycarrier–holes

Redundant

electron

DonorImpurity

Positivecharge

多数载流子：多子

少数载流子：少子

N-typesemiconductor

ntypeSemiconductor

五价

Donor---pentavalentimpurityprovidesfree

electrons,usuallyentirelyionized.

Positiveboundcharge---impurityatomdonatingelectrongivesrisetopositiveboundcharge.

Majoritycarriers---freeelectrons(mostlygeneratedbyionizeddonorandaverytinyportion

•

•

•

bythermalionization).

离子化

•

Minoritycarriers---holes(onlygeneratedbythermalionization).

1.1.2.

ExtrinsicSemiconductor

DopedSemiconductor——ptype

Si Si Si 受主

Acceptor

Al Si SA––il Si

Si Si Si

Hole

Boundcharge

1.1.2.ExtrinsicSemiconductor

2.

boron+silicon=P-type

semiconductor

•

WhatarethemajoritycarriersinP-typematerials?

WhataretheminoritycarriersinP-typematerials?

AI

N

P-typesemiconductor

material(Boron)

c

acceptor:acceptanextraelectrons

majoritycarrier–holes

minoritycarrier–electrons

cceptor

purity

Motionof

egative holes

harge

P-typesemiconductor

Hole

ptypeSemiconductor

三价

Acceptor---trivalentimpurityprovidesholes,usually

entirelyionized.

Negativeboundcharge---impurityatomacceptingholegiverisetonegativeboundcharge

Majoritycarriers---holes(mostlygeneratedbyionizedacceptorandatinysmallportionbythermalionization)

Minoritycarriers---freeelectrons(onlygeneratedbythermalionization.)

•

•

•

•

1.1.2.ExtrinsicSemiconductor

1.phosphorus+silicon=N-typesemiconductor

PositiveCharges+holes=electrons

majoritycarrier

Doping

minoritycarrier

Temperature

2.

boron+silicon=P-type

semiconductor

NegativeCharges+electrons=holes

majoritycarrier

minoritycarrierTemperature

Doping

Conclusiononthedopedsemiconductor

•

Majoritycarrieris