半导体制造技术：导论

SemiconductorManufacturingTechnology

(半导体制造技术)

-Chap.1Introduction

TEXTBOOKSReferenceBooks1、HistoryoftheSemiconductorManufacturingTechniques（半导体制造技术的历史）－SemiconductorMaterials（半导体材料）－SemiconductorDevices（半导体装置）－SemiconductorProcessing（半导体工艺）1.1SemiconductorMaterials（半导体材料）Narrowsense（狭义理解）：Themajorsemiconducting

materialsinthemicroelectronicindustry:Germanium（Ge）、Sillicon（Si）、GalliumArsenide（GaAs）。（在微电子工业中的主要半导体材料：Ge，Si，GaAs）Broadsense(广义理解)：Othersemiconductors,includingmetaloxides(ZnO),organicsemiconductors,CNTs,etal.（其他半导体材料，包括金属氧化物（ZnO），有机半导体，CNTs等）ComparisonoftheSemiconductors（半导体的比较）Material（材料）Band

gap（带隙）description（描述）Ge0.66eVEarliestsemiconductor，Firsttransistorin1947（最早的半导体，最早的晶体管材料，1947年）Si1.12eVMostcommonsemiconductor；（最常用的半导体）Easytoformhighqualityoxidizedlayer；（容易形成高质量的氧化层）LargerbandgapthanGe，Higherworkingtemperature；（比Ge的带隙更宽，更高的工作温度）Cheap.（便宜）GaAs1.42eVHigherelectronmobility，Goodforhighspeeddevices；（更高的电子迁移率，适合高速设备）Poorthermalstability，Highdefectdensity，lowintrinsicoxidizationrate。（差的热稳定性，高缺陷密度，低的本征氧化速率）。1.2SemiconductorDevicesYearDeviceInventor1874金属－半导体接触Metal-SemiconductorcontactBraun1907发光二极管LEDRound1947双极晶体管BipolarTransistorBardeen,Brattain,Shockley1949PN

junctionShockley1952晶闸管ThyristorEbers1954SolarCell（太阳能电池）Chapin,Fuller,PearsonThefirsttransistor（第一个晶体管）Bardeen,Brattain,Shockley

wontheNobelPricein1956forthis.Comparingwithvacuumtubes,Transistorsarelighter,smaller,cheaperandlastlonger.（与真空管相比，晶体管更轻，更小，更便宜，使用寿命更长。）Athyristor（晶闸管）Reverseblockingmode—Voltageisappliedinthedirectionthatwouldbeblockedbyadiode（反向阻断模式-电压加在被二极管阻断的地方）Forwardblockingmode—Voltageisappliedinthedirectionthatwouldcauseadiodetoconduct,butthethyristorhasnotbeentriggeredintoconduction（正向阻塞模式-电压在导致二极管导通的方向施加，但晶闸管还未触发成导通）Forwardconductingmode—Thethyristorhasbeentriggeredintoconductionandwillremainconductinguntiltheforwardcurrentdropsbelowathresholdvalueknownasthe"holdingcurrent"（正向传导模式-晶闸管已被触发成导通和将保持导通，直到正向电流低于被称为“保持电流“的阈值）1957HeterojunctionBipolarTransistor异质结双极晶体管Kroemer1958隧道二极管TunnelDiodeEsaki1960MOSFETKahng,Atalla1962半导体激光器件semiconductorlaserHall1963异质结激光器件HeterojunctionLaserKroemer,Alferov,Kazarinov1963转移电子二极管TransferredElectronDiodeGunn1966MESFET（Metal-SemiconductorFET）Mead1967非易失性半导体存储器Non-volatilememoryKahng,SzeI-VcurveofaGaAsGunndiodeI-VcurveofatunneldiodeAFloatingGateMOSFET浮栅场效应晶体管：控制门，source（源极），floatinggate（浮置栅极），drain（漏极）。1970电荷耦合器件Charge-CoupledDevicesBoyle,Smith1974共振隧道二极管ResonanttunnelingdiodeChang,Esaki,Tsu1980MODFET

modulated-dopingfieldeffecttransistor

alsoknownastheHighElectronMobilityTransistor(HEMT)Mimura等1994室温单电子记忆单元SingleElectronMemoryYano等200115nmMOSFETYu等以上数据摘自《半导体制造基础》施敏著，代永平译，2007AonedimensionalCCDCCD(ChargeCoupledDevice)是电荷藕合器件图像传感器。它使用一种高感光度的半导体材料制成，能把光线转变成电荷，通过模数转换器芯片转换成数字信号，数字信号经过压缩以后由相机内部的闪速存储器或内置硬盘卡保存1.3SemiconductorTechnologyEvolutionYearTechniqueInventor1918CzochralskiProcessCzochralski1925Bridgman-StockbargemethodBridgman1952DopantDiffusionPfann1957LithographyAndrus1957OxidemaskingFrosch,Derrick1957EpitaxialCVDSheftal,Kokorish,Krasilov1958IonImplantationShockley1959IntegratedCircuitKilby1959monolithicintegratedcircuitNoyce1960planarprocessHoerni1963Complementarymetal–oxide–semiconductor(CMOS)Wanlass,Sah1967Dynamicrandom-accessmemoryDennard1969Self-alignedgate多晶硅自对准栅Kerwin,Klein,Sarace1969MOCVDManasevit,Simpson1971DryEtching干法刻蚀Irving,Lemons,Bobos1971MBE分子束外延Cho1971Micropocessor微处理器技术Hoff1982TrenchIsolation沟槽隔离法Rung,Momose,Nagakubo1989Chemical-MechanicalPolishing化学机械抛光Davari1993Copperinterconnect铜互连ParazczakNANDgateinCMOSlogicCrosssectionoftwotransistorsinaCMOSgate(NAND),inanN-wellCMOSprocess金属-氧化物-半导体（MOS）场效应晶体管Thefirstmicroprocessor.MadebyHoff,etal.in1971.3mmx4mm,with2300MOSFETs.2、DevelopmentTrendoftheMicroelectronicIndustry（微电子产业的发展趋势）Moore’sLaw（摩尔定律）PropoundedbyGordenE.Moore,theco-founderofIntel,in1964;Thenumberoftransistorsonintegratedcircuitsdoublesapproximatelyeverytwoyears.（集成电路上的晶体管数量大约每两年增加一倍）DevelopmentstageAbbreviationNumberofDevicesinonechipSmallscaleintegration（1950s）SSI2－50Middlescaleintegration（1960s）MSI50－5,000Largescaleintegration（1970s）LSI5,000－100,000Verylargescaleintegration（1980s）VLSI100,000－1,000,000Ultralargescaleintegration（1990s）ULSI＞1,000,000IntelXeonE7>1,000,000,000FeatureSize（特征尺寸）:Thesizeoftheelementsonachip,whichisdesignatedbythe"DRAMhalfpitch."（一个芯片上的元件的尺寸，叫做DRAM半节距。）Thesmallestfeaturesizeisgenerallysmallerthanthefeaturesizeforatechnologygeneration(technologynode).（最小特征尺寸一般小于特征尺寸的技术产生（技术节点））Forexample,the180nmtechnologygenerationwillhavegatelengthssmallerthan180nm.Developmenttrend：smallerfeaturesizeandlargerwaferdiameter（发展趋势：更小的特征尺寸和更大的晶圆直径）SmallerfeaturesizeHigherarithmetic

speed（更