集成电路专业英语词汇

Abruptjunction突变结Acceleratedtesting加速实验Acceptor受主Acceptoratom受主原子Accumulation积累、堆积Accumulatingcontact积累接触Accumulationregion积累区Accumulationlayer积累层Activeregion有源区Activecomponent有源元Activedevice有源器件Activation激活Activationenergy激活能Activeregion有源（放大）区Admittance导纳Allowedband允带Alloy-junctiondevice合金结器件Aluminum(Aluminium)铝Aluminum-oxide铝氧化物Aluminumpassivation铝钝化Ambipolar双极的Ambienttemperature环境温度Basetransittime基区渡越时间Basetransportefficiency基区输运系数Amorphous无定形的，非晶体的Basetransittime基区渡越时间Basetransportefficiency基区输运系数Analogue(Analog)comparator模拟比较器Angstrom埃Anneal退火Anisotropic各向异性的Anode阳极Arsenic(AS)砷Auger俄歇Augerprocess俄歇过程Avalanche雪崩Avalanchebreakdown雪崩击穿Avalancheexcitation雪崩激发Backgroundcarrier本底载流子Backgrounddoping本底掺杂Backward反向Backwardbias反向偏置Ballastingresistor整流电阻Ballbond球形键合Band能带Bandgap能带间隙Barrier势垒Barrierlayer势垒层Barrierwidth势垒宽度Base基极Basecontact基区接触Basestretching基区扩展效应基矢Base-widthmodulation基区宽度调制Basisvector基矢Bias偏置Bilateralswitch双向开关Binarycode二进制代码Binarycompoundsemiconductor二元化合物半导体Bipolar双极性的BipolarJunctionTransistor(BJT)双极晶体管Bloch布洛赫Blockingband阻挡能带Blockingcontact阻挡接触Body-centered体心立方Body-centredcubicstructure体立心结构Boltzmann波尔兹曼Bond键、键合Bondingelectron价电子Bondingpad键合点Bootstrapcircuit自举电路Bootstrappedemitterfollower自举射极跟随器Boron硼Borosilicateglass硼硅玻璃Boundarycondition边界条件

Boundelectron束缚电子Breadboard模拟板、实验板Breakdown击穿Breakover转折Brillouin布里渊Brillouinzone布里渊区Built-in内建的Build-inelectricfield内建电场Bulk体/体内Bulkabsorption体吸收Bulkgeneration体产生Bulkrecombination体复合Burn-in老化Burnout烧毁Buriedchannel埋沟Burieddiffusionregion隐埋扩散区Can外壳Capacitance电容Can外壳Capacitance电容Capturecrosssection俘获截面Capturecarrier俘获载流子Carrier载流子、载波Carrybit进位位Carry-inbit进位输入Carry-outbit进位输出Cascade级联Case砂士管壳Cathode阴极Center中心Ceramic陶瓷（的）Channel沟道Channelbreakdown沟道击穿Channelcurrent沟道电流Channeldoping沟道掺杂Channelshortening沟道缩短Channelwidth沟道宽度Characteristicimpedance特征阻抗Charge电荷、充电Charge-compensationeffects电荷补偿效应Chargeconservation电荷守恒Chargeneutralitycondition电中性条件Chargedrive/exchange/sharing/transfer/storage电荷驱动/交换/共享/转移/存储Chemmicaletching化学腐蚀法Chemically-Polish化学抛光Chemmically-MechanicallyPolish(CMP)化学机械抛光Chip芯片Chipyield芯片成品率Chipyield芯片成品率Clampingdiode箝位二极管Clockrate时钟频率Clockflip-flop时钟触发器Clamped箝位Cleavageplane解理面Clockgenerator时钟发生器Close-packedstructure密堆积结构Close-loopgain闭环增益Collector集电极Close-loopgain闭环增益Collector集电极Collision碰撞CompensatedOP-AMP补偿运放共栅共栅/漏/源连接Common-modeinput共模输入共模抑制比Compensation补偿Common-base/collector/emitterconnection共基极/集电极/发射极连接Common-gate/drain/sourceconnectionCommon-modegain共模增益Common-moderejectionratio(CMRR)Compatibility兼容性

Compensatedimpurities补偿杂质Compensatedsemiconductor补偿半导体ComplementaryDarlingtoncircuit互补达林顿电路ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementaryerrorfunction余误差函数Computer-aideddesign(CAD)/test(CAT)/manufacture(CAM)计算机辅助设计/测试/制造CompoundSemiconductor化合物半导体Conductance电导Conductionband(edge)导带(底)Conductionlevel/state导带态Conductor导体Conductivity电导率Configuration组态Conlomb库仑ConpledConfigurationDevices结构组态ConstantsConstantenergysurfaceContactContinuityequationContactpotentialContradopingConverter等能面接触连续性方程接触电势反掺杂转换器物理常数ConpledConfigurationDevices结构组态ConstantsConstantenergysurfaceContactContinuityequationContactpotentialContradopingConverter等能面接触连续性方程接触电势反掺杂转换器物理常数Constant-sourcediffusion恒定源扩散Contamination治污Contacthole接触孔Continuitycondition连续性条件ControlledCopperinterconnectionsystemCovalent共阶的临界的CriticalConveyer

铜互连系统Couping

CrossoverCrossunder受控的传输器耦合跨交穿交Crucible坩埚Crucible坩埚Crystaldefect/face/orientation/lattice晶体缺陷/晶面/晶向/晶格Currentdensity电流密度格Currentdensity电流密度Curvature曲率Cutoff截止Currentdrift/dirve/sharing电流漂移/驱动/共享CurrentSense电流取样CurrentSense电流取样Curvature弯曲Customintegratedcircuit定制集成电路Cylindrical柱面的Czochralshicrystal直立单晶Czochralskitechnique切克劳斯基技术(Cz法直拉晶体J)Danglingbonds悬挂键Darkcurrent暗电流Deadtime空载时间Debyelength德拜长度De.broglie德布洛意Decderate减速Decibel(dB)分贝Decode译码Deepacceptorlevel深受主能级Deepdonorlevel深施主能级Deepimpuritylevel深度杂质能级Deeptrap深陷阱Defeat缺陷Degeneratesemiconductor简并半导体Degeneracy简并度

Degradation退化DegreeCelsius(centigrade)/Kelvin摄氏/开氏温度Delay延迟Densityofstates态密度Density密度Degradation退化DegreeCelsius(centigrade)/Kelvin摄氏/开氏温度Delay延迟Densityofstates态密度Density密度Depletion耗尽Depletionapproximation耗尽近似Depletioncontact耗尽接触Depletiondepth耗尽深度Depletionlayer耗尽层Depletionregion耗尽区Depositionprocess淀积工艺Die芯片（复数dice）Dielectric介电的Difference-modeinput差模输入Differentialcapacitance微分电容Diffusion扩散Diffusionconstant扩散常数Depletioneffect耗尽效应DepletionMOS耗尽MOSDepositedfilm淀积薄膜Designrules设计规则Diode二极管Dielectricisolation介质隔离Differentialamplifier差分放大器Diffusedjunction扩散结Diffusioncoefficient扩散系数Diffusivity扩散率Diffusioncapacitance/barrier/current/furnace扩散电容/势垒/电流/炉Digitalcircuit数字电路Dipoledomain偶极畴Dipolelayer偶极层Direct-coupling直接耦合Direct-gapsemiconductor直接带隙半导体Directtransition直接跃迁Discharge放电Discharge放电Discretecomponent分立元件Dissipation耗散Dissipation耗散Distributedcapacitance分布电容Displacement位移Domain畴Donorexhaustion施主耗尽Dopedsemiconductor掺杂半导体Distribution分布Distributedmodel分布模型Dislocation位错Donor施主Dopant掺杂剂Dopingconcentration掺杂浓度Double-diffusiveMOS(DMOS)双扩散MOS.Drift漂移Driftfield漂移电场Driftmobility迁移率Dryetching干法腐蚀Dry/wetoxidation干/湿法氧化Dose剂量Dutycycle工作周期Dual-in-linepackage(DIP)双列直插式封装Dynamics动态Dynamiccharacteristics动态属性Dynamicimpedance动态阻抗

Earlyeffect厄利效应Earlyfailure早期失效Effectivemass有效质量Einsteinrelation(ship)爱因斯坦关系ElectricEraseProgrammableReadOnlyMemory(E2PROM)一次性电可擦除只读存储器Electrode电极Electrominggratim电迁移Electronaffinity电子亲和势Electronic-grade电子能Electron-beamphoto-resistexposure光致抗蚀剂的电子束曝光Electrongas电子气Electron-gradewater电子级纯水Electrontrappingcenter电子俘获中心ElectronVolt(eV)电子伏Electrostatic静电的Element元素/元件/配件Elementalsemiconductor元素半导体Ellipse椭圆Ellipsoid椭球Emitter发射极Emitter-coupledlogic发射极耦合逻辑Emitter-coupledpair发射极耦合对Emitterfollower射随器Emptyband空带Emittercrowdingeffect发射极集边(拥挤)效应Endurancetest=lifetest寿命测试Energystate能态Energymomentumdiagram能量-动量(E-K)图Enhancementmode增强型模式EnhancementMOSEnvironmentaltestEpitaxiallayerExpitaxy增强性MOSEntefic（低）共溶的EnhancementMOSEnvironmentaltestEpitaxiallayerExpitaxy环境测试Epitaxial外延的外延层Epitaxialslice外延片外延Equivalentcurcuit等效电路Equilibriummajority/minoritycarriers平衡多数/少数载流子ErasableProgrammableROM(EPROM)可搽取(编程)存储器ErrorfunctioncomplementEtchEtchingmaskExcitationenergyExcitonExtrinsicErrorfunctioncomplementEtchEtchingmaskExcitationenergyExcitonExtrinsic刻蚀抗蚀剂掩模激发能激子非本征的余误差函数EtchantExcesscarrierExcitedstateExtrapolation刻蚀剂过剩载流子激发态外推法Extrinsicsemiconductor杂质半导体Face-centered面心立方Falltime下降时间Fan-in扇入Fan-out扇出Fastrecovery快恢复Fastsurfacestates快界面态Feedback反馈Fermilevel费米能级Fermi-DiracDistribution费米-狄拉克分布Femipotential费米势

Fickequation菲克方程(扩散)Fieldeffecttransistor场效应晶体管Forbiddenband禁带Forwardbias正向偏置Forwardblocking/conducting正向阻断/导通Fieldoxide场氧化层Fieldoxide场氧化层Film薄膜Flatband平带Flickernoise闪烁（变）噪声Floatinggate浮栅Filledband满带Flashmemory闪烁存储器Flatpack扁平封装Flip-floptoggle触发器翻转Fluorideetch氟化氢刻蚀Frequencydeviationnoise频率漂移噪声Frequencyresponse频率响应Function函数Gain增益Gallium-Arsenide(GaAs)砷化钾Gamyrayr射线Gate门、栅、控制极Gateoxide栅氧化层Gauss(ian)高斯Gaussiandistributionprofile高斯掺杂分布Generation-recombination产生-复合GeometriesGradedGradedjunctionGradientGeometriesGradedGradedjunctionGradientGuardringGunn-effect几何尺寸缓变的缓变结梯度保护环狄氏效应Graded(gradual)channel缓变沟道Grain晶粒Grownjunction生长结HardeneddeviceHeatsinkHeavysaturationHeterojunction辐射加固器件散热器、热沉重掺杂异质结Heatofformation形成热Heavy/lightholeband重/轻空穴带HardeneddeviceHeatsinkHeavysaturationHeterojunction辐射加固器件散热器、热沉重掺杂异质结Heatofformation形成热Heavy/lightholeband重/轻空穴带Hell-effect霍尔效应Heterojunctionstructure异质结结构HeterojunctionBipolarTransistor(HBT)异质结双极型晶体Highfieldproperty高场特性High-performanceMOS.(H-MOS)高性能MOS.Hormalized归一化Horizontalepitaxialreactor卧式外延反应器Hotcarrior热载流子Hybridintegration混合集成Image-force镜象力Impactionization碰撞电离Impedance阻抗Imperfectstructure不完整结构Implantationdose注入剂量Implantedion注入离子Impurity杂质Impurityscattering杂志散射Incrementalresistance电阻增量(微分电阻)In-contactmask接触式掩模Indiumtinoxide(ITO)铟锡氧化物Inducedchannel感应沟道Infrared红外的Injection注入Inputoffsetvoltage输入失调电压Insulator绝缘体InsulatedGateFET(IGFET)绝缘栅FETIntegratedinjectionlogic集成注入逻辑Integration集成、积分Interconnection互连Interconnectiontimedelay互连延时Interdigitatedstructure交互式结构Interface界面Interference干涉

Interface界面Interference干涉Internationalsystemofunions国际单位制Internallyscattering谷间散射Interpolation内插法Intrinsic本征的Intrinsicsemiconductor本征半导体Inverseoperation反向工作Inversion反型Inverter倒相器Ion离子Ionbeam离子束Ionetching离子刻蚀Ionimplantation离子注入Ionization电离Ionizationenergy电离能Irradiation辐照Isolationland隔离岛Isotropic各向同性JunctionFET(JFET)结型场效应管Junctionisolation结隔离Junctionspacing结间距Junctionside-wall结侧壁Latchup闭锁Lateral横向的Lattice晶格Layout版图Latticebinding/cell/constant/defect/distortion晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakagecurrent(泄)漏电流Lifetime寿命LevelshiftinglinearityLiquidNitrogen电平移动

线性度液氮Liquid－phaseepitaxialgrowthtechnique液相外延生长技术Lithography光刻LoadlineorVariable负载线纵向的洛沦兹LongitudinalLorentzLevelshiftinglinearityLiquidNitrogen电平移动

线性度液氮Liquid－phaseepitaxialgrowthtechnique液相外延生长技术Lithography光刻LoadlineorVariable负载线纵向的洛沦兹LongitudinalLorentzLightEmittingDiode(LED)发光二极管LocatingandWiring布局布线LogicswingLumpedmodel逻辑摆幅集总模型多数载流子掩模序号MajoritycarrierMasklevelMass-actionlaw质量守恒定律Matching匹配Meanfreepath平均自由程Meantimebeforefailure(MTBF)Mask掩膜板，光刻板掩模组MasksetMaster-slaveDflip-flop主从D触发器Maxwell麦克斯韦Meanderedemitterjunction梳状发射极结平均工作时间Megeto-resistance磁阻MesaMESFET-MetalSemiconductor金属半导体FET台面Metallization金属化Microelectronics微电子学Minoritycarrier少数载流子Mismatching失配Mobility迁移率Modulate调制MonolithicIC单片ICMos.Transistor(MOST)MOS.晶体管Microelectronictechnique微电子技术Millenindices密勒指数Misfit失配Mobileions可动离子Module模块Molecularcrystal分子晶体MOSFET金属氧化物半导体场效应晶体管Multiplication倍增Modulator调制Multi-chipmodule(MCM)多芯片模块Multi-chipIC多芯片ICMultiplicationcoefficient倍增因子Nakedchip未封装的芯片（裸片）Negativefeedback负反馈Negativeresistance负阻Nesting套刻Negative-temperature-coefficient负温度系数Noisemargin噪声容限NonequilibriumModulator调制Multi-chipmodule(MCM)多芯片模块Multi-chipIC多芯片ICMultiplicationcoefficient倍增因子Nakedchip未封装的芯片（裸片）Negativefeedback负反馈Negativeresistance负阻Nesting套刻Negative-temperature-coefficient负温度系数Noisemargin噪声容限Nonequilibrium非平衡Nonrolatile非挥发（易失）性Normallyoff/on常闭/开Numericalanalysis数值分析Occupiedband满带Offset偏移、失调Ohmiccontact欧姆接触Operatingpoint工作点Officienay功率Onstandby待命状态Opencircuit开路Operatingbias工作偏置Operationalamplifier(OPAMP)运算放大器Opticalphoton=photon光子Opticaltransition光跃迁Opticalquenching光猝灭Optical-coupledisolator光耦合隔离器Organicsemiconductor有机半导体Outline外形Outputcharacteristic输出特性Overcompensation过补偿Overshoot过冲Overlap交迭Oscillator振荡器Oxidation氧化Package封装Parameter参数Parasiticoscillation寄生振荡Passivecomponent无源元件Passivesurface钝化界面Orientation晶向、定向Out-of-contactmask非接触式掩模Outputvoltageswing输出电压摆幅Over-currentprotection过流保护Over-voltageprotection过压保护Overload过载Oxide氧化物Oxidepassivation氧化层钝化Pad压焊点Parasiticeffect寄生效应Passination钝化Passivedevice无源器件Parasitictransistor寄生晶体管Peak-pointvoltage峰点电压Peakvoltage峰值电压Permanent-storagecircuit永久存储电路Period周期Periodictable周期表Phase-lockloop锁相环Periodictable周期表Phase-lockloop锁相环Phononspectra声子谱Photoconduction光电导Photoelectriccell光电池Photoelectriceffect光电效应Photoenicdevices光子器件(photo)resist(光敏)抗腐蚀剂Pinchoff夹断Permeable-base可渗透基区Phasedrift相移Photodiode光电二极管Photolithographicprocess光刻工艺Pin管脚费米能级的钉扎（效应）PinningofFermilevelPlanarprocess平面工艺Planarprocess平面工艺Plasma等离子体Poissonequation泊松方程Polarity极性Planartransistor平面晶体管Plezoelectriceffect压电效应Pointcontact点接触Polycrystal多晶Polymersemiconductor聚合物半导体Poly-silicon多晶硅Potential(Potential(电)势Potentialwell势阱Powertransistor功率晶体管Primaryflat主平面Print-circuitboard(PCB)印制电路板Probe探针Propagationdelay传输延时Potentialbarrier势垒Powerdissipation功耗Preamplifier前置放大器Principalaxes主轴Probability几率Process工艺Pseudopotentialmethod膺势发Punchthrough穿通Pulsetriggering/modulating脉冲触发/调制Punchthrough穿通Quantum量子Quantum量子Quantummechanics量子力学Quartz石英Quantumefficiency量子效应Quasi-Fermi—level准费米能级Radiationconductivity辐射电导率Radiationconductivity辐射电导率Radiationfluxdensity辐射通量密度Radiationprotection辐射保护Radiationdamage辐射损伤Radiationhardening辐射加固Radiative-recombination辐照复合WidenModulator(PWM)脉冲宽度调制Punchthrough穿通Push-pullstage推挽级Qualityfactor品质因子Quantization量子化Radioactive放射性Reachthrough穿通Reactivesputteringsource反应溅射源Readdiode里德二极管Recombination复合Recoverydiode恢复二极管Reciprocallattice倒核子Recoverytime恢复时间Rectifier整流器（管）Rectifyingcontact整流接触Reference基准点基准参考点Refractiveindex折射率Register寄存器Registration对准Regulate控制调整Relaxationlifetime驰豫时间Reliability可靠性Resonance谐振Resistance电阻Resistor电阻器Resistivity电阻率Regulator稳压管（器）Relaxation驰豫Resonantfrequency共射频率Responsetime响应时间Reverse反向的Reversebias反向偏置Samplingcircuit取样电路Sapphire蓝宝石（AI2O3）

Satellitevalley卫星谷Saturatedcurrentrange电流饱和区Saturationregion饱和区Scaleddown按比例缩小Schockleydiode肖克莱二极管Schottkybarrier肖特基势垒Satellitevalley卫星谷Saturatedcurrentrange电流饱和区Saturationregion饱和区Scaleddown按比例缩小Schockleydiode肖克莱二极管Schottkybarrier肖特基势垒Schrodingen薛定厄Secondaryflat次平面Seedcrystal籽晶Selectivity选择性Selfdiffusion自扩散Semiconductor-controlledrectifier可控硅Saturation饱和的Scattering散射Schottky肖特基Schottkycontact肖特基接触Scribinggrid划片格Segregation分凝Selfaligned自对准的Semiconductor半导体灵敏度SendsitivitySerial串行/串联Settletime建立时间Shield屏蔽Shotnoise散粒噪声Sidewallcapacitance边墙电容Silicaglass石英玻璃Siliconcarbide碳化硅SiliconNitride(Si3N4)氮化硅Seriesinductance串联电感Sheetresistance薄层电阻Shortcircuit短路Shunt分流Signal信号Silicon硅Silicondioxide(SiO2)二氧化硅

SiliconOnInsulator绝缘硅Siliverwhiskers银须Singlecrystal单晶Skineffect趋肤效应Sneakpath潜行通路Solarbattery/cell太阳能电池SolidSolubility固溶度Source源极Spacecharge空间电荷Speed-powerproduct速度功耗乘积Spin自旋Spontaneousemission自发发射Sputter溅射Staticcharacteristic静态特性Simplecubic简立方Sink沉Snaptime急变时间Sulethreshold亚阈的Solidcircuit固体电路Sonband子带Sourcefollower源随器Specificheat(PT)热Spherical球面的S