Toshiba-Nand-Flash-naming.详细完整说明VIP

MFOPR-916,Sep.24’2010

Copyright2006,ToshibaCorporation.

PAGE

1

PartNumberDecoderforToshibaNANDFlash

PartNumberDecoderfor

ToshibaNANDFlash

Revision1.3

MemoryApplicationEngineeringDept.

MemoryDivision,TOSHIBACORPORATIONSemiconductorCompanySep.24th’2010

MFOPR-916,Sep.24’2010

PAGE

15

PartNumberDecoder

~RawNAND~

Thisruleisavailablefor56nm,43nm,32nmand24nmNANDs.

P/NDecoderforRawNAND(LargeBlock)~Definition

MemoryDensity

TypeofNANDFlashI/F

Organization

PackageType

Packagesize

Symbol

Mono/Stack

TC58

SingleChip

TH58

MultiChip

TH58NVG7D2FTA00xxx

VoltageType

Mode

Additionalcode*DesignRule

CellLevel

*Partnumberondatasheetisnotincludingadditionalcode.AdditionalcodeuseforToshibainternalproductioncontrol.

P/NDecoderforRawNAND(LargeBlock)~Details-1

Thisruleisavailablefor56nm,43nm,32nmand24nmNANDs

TogglemodeNAND

T

NAND*1

D

NAND

N

TYPEofNANDI/F

Symbol

3.3Vor1.8V

3.3Vor1.8V

D

1.65Vto3.6V

3.3V

B

1.8V

3.3V

A

-

1.8V

Y

-

3.3V

V

VccQ

Vcc

Symbol

TH58NVG7D2FTA00xxx

*1:Uniquecharacterforproductvarietycontrol.

SymbolM8M9G0G1G2G3

G4GAG5GBG6GCG7GDG8GEG9GFT0T1

Density256(=28)Mbits

512(=29)Mbits

1(=20)Gbits

2(=21)Gbits

4(=22)Gbits

8(=23)Gbits

16(=24)Gbits

24 Gbits32(=25)Gbits

48 Gbits64(=26)Gbits

96 Gbits128(=27)Gbits

192 Gbits256(=28)Gbits

384 Gbits512(=29)Gbits768 Gbits1(=20)Tbits2(=21)Tbits

=32MB

=64MB

=128MB

=256MB

=512MB

=1GB

=2GB

=3GB

=4GB

=6GB

=8GB

=12GB

=16GB

=24GB

=32GB

=48GB

=64GB

=96GB

=128GB

=256GB

P/NDecoderforRawNAND(LargeBlock)~Details-2

Thisruleisavailablefor56nm,43nm,32nmand24nmNANDs

Symbolx8 x16

0 5

1 6

PageSize

4KB

4KB

BlockSize

256KB

512KB

Symbol DesignRuleA 130nm

90nm

70nm

*1:Uniquecharacterforproductvarietycontrol.

8Level(3bits/cell)

T/U*1

4Level(2bits/cell)

D/E*1

2Level(1bits/cell)

S/H*1

CellLevel

Symbol

TH58NVG7D2FTA00xxx

2

7

>4KB

>512KB

D

56nm

3

8

2KB

128KB

E

43nm

4

9

2KB

256KB

F

32nm

G

24nmA-type

H

24nmB-type

P/NDecoderforRawNAND(LargeBlock)~Details-3

Thisruleisavailablefor56nm,43nm,32nmand24nmNANDs

Symbol

Channel

#of

/CE

Note

Normal

I-ver.

0

I

Single

1

TSOP,BGA

2

K

Single

2

TSOP,BGA

4

M

Dual

2

LGA

7

R

Single

4

TSOPPoP

8

S

Single/Dual

4

TSOP,BGA,LGA

A

U

Single/Dual

6

TSOP,BGA,LGA

B

V

Single/Dual

8

TSOP,BGA,LGA

TH58NVG7D2FTA00xxx

PKG

Symbol

LeadFree

HalogenFree

TSOP

FT

No

No

TG*1

Yes

No

TA

Yes

Yes

BGA

XB

No

No

XG*1

Yes

No

BA

Yes

Yes

LGA

-

No

No

XL*1

Yes

No

LA

Yes

Yes

*1:SomeoftheproductareHalogenFreewiththiscode.Ifnecessary,PleaseasktoToshiba.

P/NDecoderforRawNAND(LargeBlock)~Details-4

Thisruleisavailablefor56nm,43nm,32nmand24nmNANDs

TH58NVG7D2FTA00xxx

Symbol

TSOP[mm]

LGA[mm]

BGA[mm]

0

12x20x1.2

Reserved

Generalcode(12.5x20,14x18,12x18)

1

Reserved

40lands,12x18x0.7

224balls,14x18x1.46*1

2

Reserved

40lands,12x18x1.15

224balls,14x18x1.46*1

3

Reserved

40lands,12x17x0.65

60balls,8.5x13

4

Reserved

40lands,12x17x1.0

60balls,9x11

5

Reserved

40lands,12x17x1.04

60balls,10x13

6

Reserved

40lands,13x17x1.04

60balls,8.5x13*1

7

Reserved

52lands,14x18x1.4

60balls,9x11*1

8

Reserved

52lands,14x18x1.04

60balls,10x13*1

9

Reserved

52lands,14x18x1.0

132balls(Toggle),12x18x1.4

A

Reserved

52lands,12x17x1.04/1.0

132balls(Toggle),12x18x1.85

B

12x18x1.2*1

52lands,12x17x1.4

224balls,14x18x1.35

C

Reserved

52lands,11x14x0.9

-

D

Reserved

132lands(Toggle)12x18x1.04

-

*1:Uniquecharacterforproductvarietycontrol.

PartNumberDecoder

~NANDwithController~

P/NDecoderforNANDw/controller~Definition

NANDInterfaceTypeofFlash

MemoryDensity

Numberofstackedchip/PackagePackageType

Packagesize

THGBM2G9DBFBAI2xxx

Toshiba

Mode

Add.code

MemoryIC

VoltageType

DesignRuleCellLevel

ControllerRevision(Uniquecode)

*Partnumberondatasheetisnotincludingadditionalcode.AdditionalcodeuseforToshibainternalproductioncontrol.

Symbol

Module

D

IC

G

Type

P/NDecoderforNANDw/controller~Details-1

THGBM2G9DBFBAI2xxx

Symbol

Type

Symbol

Density

Symbol

Vcc

VccQ

V

3.3V

-

Y

1.8V

-

A

3.3V

1.8V

B

3.3V

3.3Vor1.8V

D

3.3Vor1.8V

3.3Vor1.8V

M

eMMC

M8

256(=28)Mbits

=32MB

N

NAND

M9

512(=29)Mbits

=64MB

R

PBA-NAND

G0

1(=20)Gbits

=128MB

S

eSD

G1

2(=21)Gbits

=256MB

U

USB

G2

4(=22)Gbits

=512MB

B

G3

8(=23)Gbits

=1GB

C

G4

16(=24)Gbits

=2GB

DHWX

Others

GAG5GBG6GCG7GDG8GEG9GFT0

T1

24 Gbits32(=25)Gbits

48 Gbits64(=26)Gbits

96 Gbits128(=27)Gbits

192 Gbits256(=28)Gbits

384 Gbits512(=29)Gbits768 Gbits1(=20)Tbits

2(=21)Tbits

=3GB

=4GB

=6GB

=8GB

=12GB

=16GB

=24GB

=32GB

=48GB

=64GB

=96GB

=128GB

=256GB

P/NDecoderforNANDw/controller~Details-2

THGBM2G9DBFBAI2xxx

12die

A

1~9die

1~9

Stackeddie

Symbol

4Level

(2bits/cell)

D

2Level

(1bits/cell)

S

CellLevel

Symbol

Symbol0

16die

B

I

DesignRule

Normalversion(0oC~70oC)

Industrialversion

(-25oCor-40oC~85oC)

T

8Level

(3bits/cell)

Symbol

DesignRule

A

130nm

B

90nm

C

70nm

D

56nm

E

43nm

F

32nm

G

24nmA-type

H

24nmB-type

PKGTSOP

BGA

LGA

SymbolFT

TG*

TAXB

XG*BA

-

XL*LA

LeadFreeNoYesYesNoYesYesNoYesYes

HalogenFreeNo

No

YesNoNoYesNoNoYes

*SomeoftheproductareHalogenFreewiththiscode.Ifnecessary,PleaseasktoToshiba.

P/NDecoderforNANDw/controller~Details-3

THGBM2G9DBFBAI2xxx

Symbol

TSOP[mm]

LGA[mm]

BGA[mm]

0

12x20x1.2

12x18x1.4

12x18x1.4

1

Reserved

Reserved

12x18x1.2

2

Reserved

14x18x1.4

14x18x1.4

3

Reserved

Reserved

14x18x1.2

6

Reserved

Reserved

14x18x1.5

8

Reserved

14x18x0.9

11.5x13x1.2

9

Reserved

14x18x1.0

12x16x1.2

B

Reserved

Reserved

12x16x1.4

E

Reserved

Reserved

12x16x1.2*1

F

Reserved

Reserved

17x22x1.4*1

G

Reserved

Reserved

11.5x13x1.2*1

H

Reserved

Reserved

12x16x1.4*1

I

Reserved

Reserved

14x18x1.2*1

J

Reserved

Reserved

14x18x1.4*1

K

Reserved

Reserved

14x18x1.4*2

*1:OSP=OrganicSolderabilityPreservatives.*2:Packageinternalstructureoptimization.

ChangeHistoryforPartNumberDecoder

Revision

ReleasedDate

Note

1.0

Nov.17’2008

Rev.1.0isreleased.

1.1

Nov.27th’2008

ToaddP/NofNANDwithcontroller

1.2

Dec.10th’2008

Page5…#ofCEforLGA11/2

Page9…LowerTemp.coverage:-40oC-25oCor-40oC

1.3

Sep.24th’2010

ToaddnewP/Nrule

RESTRICTIONSONPRODUCTUSE

ToshibaCorporation,anditssubsidiariesandaffiliates(collectively“TOSHIBA”),reservetherighttomakechangestotheinformationinthisdocument,andrelatedhardware,softwareandsystems(collectively“Product”)withoutnotice.

ThisdocumentandanyinformationhereinmaynotbereproducedwithoutpriorwrittenpermissionfromTOSHIBA.EvenwithTOSHIBA’swrittenpermission,reproductionispermissibleonlyifreproductioniswithoutalteration/omission.

ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsibleforcomplyingwithsafetystandardsandforprovidingadequatedesignsandsafeguardsfortheirhardware,softwareandsystemswhichminimizeriskandavoidsituationsinwhichamalfunctionorfailureofProductcouldcauselossofhumanlife,bodilyinjuryordamagetoproperty,includingdatalossorcorruption.BeforecustomersusetheProduct,createdesignsincludingtheProduct,orincorporatetheProductintotheirownapplications,customersmustalsorefertoandcomplywith(a)thelatestversionsofallrelevantTOSHIBAinformation,includingwithoutlimitation,thisdocument,thespecifications,thedatasheetsandapplicationnotesforProductandtheprecautionsandconditionssetforthinthe"TOSHIBASemiconductorReliabilityHandbook"and(b)theinstructionsfortheapplicationwithwhichtheProductwillbeusedwithorfor.Customersaresolelyresponsibleforallaspectsoftheirownproductdesignorapplications,includingbutnotlimitedto(a)determiningtheappropriatenessoftheuseofthisProductinsuchdesignorapplications;(b)evaluatinganddeterminingtheapplicabilityofanyinformationcontainedinthisdocument,orincharts,diagrams,programs,algorithms,sampleapplicationcircuits,oranyotherreferenceddocuments;and(c)validatingalloperatingparametersforsuchdesignsandapplications.TOSHIBAASSUMESNOLIABILITYFORCUSTOMERS'PRODUCTDESIGNORAPPLICATIONS.

Productisintendedforuseingeneralelectronicsapplications(e.g.,computers,personalequipment,officeequipment,measuringequipment,industrialrobotsandhomeelectronicsappliances)orforspecificapplicationsasexpresslystatedinthisdocument.Productisneitherintendednorwarrantedforuseinequipmentorsystemsthatrequireextraordinarilyhighlevelsofqualityand/orreliabilityand/oramalfunctionorfailureofwhichmaycauselossofhumanlife,bodilyinjury,seriouspropertydamageorseriouspublicimpact(“UnintendedUse”).UnintendedUseincludes,withoutlimitation,equipmentusedinnuclearfacilities,equipmentusedintheaerospaceindustry,medicalequipment,equipmentusedforautomobiles,trains,shipsandothertransportation,trafficsignalingequipment,equipmentusedtocontrolcombustionsorexplosions,safetydevices,elevatorsandescalators,devicesrelatedtoelectricpower,andequipmentusedinfinance-relatedfields.DonotuseProductforUnintendedUseunlessspecificallypermittedinthisdocument.

Donotdisassemble,analyze,reverse-engineer,alter,modify,translateorcopyProduct,whetherinwholeorinpart.

Productshallnotbeusedfororincorporatedintoanyproductsorsystemswhosemanufacture,use,orsaleisprohibitedunderanyapplicablelawsorregulations.

TheinformationcontainedhereinispresentedonlyasguidanceforProductuse.NoresponsibilityisassumedbyTOSHIBAforanyinfringementofpatentsoranyotherintellectualpropertyrightsofthirdpartiesthatmayresultfromtheuseofProduct.Nolicensetoanyintellectualpropertyrightisgrantedbythisdocument,whetherexpressorimplied,byestoppelorotherwise.

ABSENTAWRITTENSIGNEDAGREEMENT,EXCEPTASPROVIDEDINTHERELEVANTTERMSANDCONDITIONSOFSALEFORPRODUCT,ANDTOTHEMAXIMUMEXTENTALLOWABLEBYLAW,TOSHIBA(1)ASSUMESNOLIABILITYWHATSOEVER,INCLUDINGWITHOUTLIMITATION,INDIRECT,CONSEQUENTIAL,SPECIAL,ORINCIDENTALDAMAGESORLOSS,INCLUDINGWITHOUTLIMITATION,LOSSOFPROFITS,LOSSOFOPPORTUNITIES,BUSINESSINTERRUPTIONANDLOSSOFDATA,AND(2)DISCLAIMSANYANDALLEXPRESSORIMPLIEDWARRANTIESANDCONDITIONSRELATEDTOSALE,USEOFPRODUCT,ORINFORMATION,INCLUDINGWARRANTIESORCONDITIONSOFMERCHANTABILITY,FITNESSFORAPARTICULARPURPOSE,ACCURACYOFINFORMATION,ORNONINFRINGEMENT.

Donotuseorotherw