180纳米逻辑芯片制造流程

018LGProcessIntroduction(1P6M)LogicCircuit:能够展现精确的模拟特性，SOC与IC组成的系统相比，由于SOC能够综合并全盘考虑整个系统的各种情况，可以在同样的工艺技术条件下实现更高性能的系统指标若采用IS方法和0.35m工艺设计系统芯片，在相同的系统复杂度和处理速率下，能够相当于采用0.25~0.18m工艺制作的IC所实现的同样系统的性能与采用常规IC方法设计的芯片相比，采用SOC完成同样功能所需要的晶体管数目可以有数量级的降低ASIC:为了满足消费者特定需求而专门设计的半导体电路VDDINOUTCMOS反相器VDDYA1A2与非门：Y=A1A2基本电路结构：MOS器件结构基本电路结构：CMOS18LGadopt27Photomask,ifincludeESDlayerAA/Poly/CT/M1~M5/V1~V5useDUVscanner(13layer)“DARC”CaponCriticallayerandTopM6Poly&M1~M5adoptOPC(opticalproximitycorrection)forline-endshorting&islandmissingCompositeSpacer(ONO)PSMmethodapplyonCTlayerCobaltsalicideprocessLowKIMDlayer(FSG)0.18umProcessFeaturesOutline1.STI/TrenchIsolation2.WellDefinition/VtAdjust3.GateFormation4.N/PMOSFormation5.SalicideFormation6.ILDLayer/ContactCT(FEOL:device)7.Metal/VIA8.TopMetalVia9.Passivation(BEOL:interconnect)WAFERSTART&RSCHECKPtype8~12ohm-cm,non-EPIwaferStartOX100Adry

1.

PRisolation2.PreventthelasermarkSirecast

3.Surfacecleanness4.Backsideoxidation&trapthemetalion

ZEROPhoto

ForASMLsteppersystem

globalWaferalignmentZEROFullydryetch(OX100A+SI1200+-200A)ZEROStrip

1625ÅNitride110ÅPADOxideWaferMark(ForWaferalignment)ScrubberClean(TJBB)

StartoxideRMNLH320A(50:1HF350sec)

Meas:OxRMTHK(25~35A)AAOXPre-cln

NCR1DH75ARCAMPadoxide

110+-7A/920oCdryO2Asbufferlayertoreleasestress,duetoSINandSidifferentlatticeconstantNitrideDEP(w/Iscrubber)

1625+-100A/760oCWaferStartSTOPLAYERofSTICMPSiONDEP(CVD) FE

DARC320(w/Iscrubber)AAPhoto(120layer) AAEtch(5800A) SiN/Ox+Sietch(80+-2degree)

AAAsherMattson(Rcp:1)Polymer&WetStrip NDH15APRRMSC1M(100:1HF30sec)AATHKSTI-POPAD(5400+-160A)

16250ÅNitride110ÅPADOxideAEI=0.25+-0.02ADI=0.23+-0.02STIETCH

ToreduceSINreflectionandimprovePRresolutionasanARClayerSTIPadOXPreClnNCR1DH75ARCAM(100:1HF180sec)STILinerOX 1000C,DRYOX(200+-12A)Anneal(Diff)1100C,2hrs(Furnaceann.)HDPFill HDPCVDOX5.8KAW/OARsputter

RTAPRECLNNRCAM (SC1+SC2)

HDPCVDOXRTA 1000RTA020S(1000C,20sec,N2)5800ÅHDP1625ÅNitride110ÅPADOxideHDPDepositionTobettershallowtrenchfillingFordamagereductionbyHDPandHDPoxdensificationPSubstratePadoxidePSubstrateAASiNAAReverseAARPhoto(121layer) AAR=

(AA-0.4)+0.4)

-0.2AAREtch StoponSiNAARAsherMattson(Rcp:1)AARwetstripNPRRM(SPMonly)PadoxidePSubstrateAASiN1.Bettersurfaceflatness2.ImprovedthroughputbyOXremovingSTIPre-CMPTHK-POPAD(6100+-225A)STIPolish&in-situCln(STI_XXXX)?CMP是磨到NIT上。

STIPre-CMPTHK-POPAD(3600+-250A),SIN(1050+-50)

AANITRM NLH90AHPO2450A(50:1HF+H3PO4)THINOXIDETHK-PPAD(82+-17)STIPADOXRMNLH60A(50:1HF65sec)SACOXPRECLNNCR1DH100ARCAM(100:1HF240sec)SACOX110+-7A/920oC45mindryO2

Asimplantscreenoxide

STICMP&NITRM110ÅSACOxideN_WellPhoto(192layer) Implant: NWELLIMP

P440K15E3T00 WELLIMP注入的位置最深，用以调节井的浓度防止Latch-up效应。PCHANNELIMP P140K50E2T00CHANNELIMP位置较浅，加大LDD之下部位的WELL浓度，使器件工作时该位置的耗尽层更窄，防止器件PUNCHTHROUGH。VTPIMP A130K90E2T00VT注入，靠近器件表面，调节器件的开启电压NWELLAsherMattson:21NWELLWetStrip SPMonly NWELLAnnealPreclnMRCAM(SC1+SC2)IMPLANTDAMAGEANNEAL 1000RTA010S(1000C;10secN2(PVD)

N-WellP-WellP-VTP-pthruN-WellandVt_PadjustmentP_WellPhoto(191layer) Implant:PWELLIMP B160K15E3T00 NCHANNELIMP B025K44E2T00N_VTIMP D170K70E2T00PWELLAsherMattson:21PWELLWetStrip SPMonlyPWELLNpthruN_VTP-WellandVt_Nadjustment50Åthickgateoxide32Åthingateoxide2000ApolyFinal70AThick/ThinGateoxidedefineSACOXRM NLH60A(50:1HF65sec)SACOXTHK-POPAD(3200+-400A)GATE1_OXPreClnNCR1DH100ARCAMGATE1_OX800C,48A+-4A,wetDualGATEPhoto(131layer)(0.45+/-0.05um)GATE1ETCHN(NLB75A)GATE1StripSPMonlySTITHK-POPAD(3150+-180A)GATE2_OXPreClnNCRRCAMGATE2OX 750C,27+-2A,wetThingateThickgatePOLYDEPOSITION POLY2000A,620CSiONDEP FEDARC320POLYPHOTO(130layer)PolyARCetch+Polyetch GATEAsherMattson(Rcp:1)GATEWetStrip NDH5APRRM(100:1HF10sec+SPM)THICKGATEOXIDETHK-PPAD(25+-5A)SIONRM NLH5AHP0550A50:1HF+H3PO4GATERE-OxidationPreClnNRCA(SC1+SC2)PolyRe_Oxidation 1015C,21ARTO(T1C,THK0.8A)N-WellP-WellADI0.18+-0.015umAEI0.18+-0.015umPolyGateDefinitiona.RecoverETCHdamagetoGOX.b.Preventnative-oxideForthermalbudget&goodoxideprofilearoundpolygateNLDD1Photo(116layer)Implant:NPocketimplant (D130K25E3T30R445)

NLDDimplant(A003K80E4T00)

NLDD1Asher&WetStrip(21+SPM) PLDD1Photo(113layer)Implant:PPocketimplant:(A130K30E3T30R445)PLDDimplant(F005K20E4T00)

PLDD1Asher&WetStrip(21+SPM)N-WellP-WellNNPPLDD1Definition(Coredevice,1.8V)NLDD114maskPLDD113maskPLDDIMPNLDDIMPHotcarriereffectLDD2Definition(I/Odevice,3.3V)N-WellP-WellNNPPPLDDIMPNLDD116maskPLDD115maskNLDDIMPPLDD2(115layer)PLDD2PhotoPLDD2implant(F040K30E3T00)

PLDD2Asher&WetStrip(21+SPM)PLDD2-RTA0950RTA010S(950C,10sec) NLDD2(114layer)NLDD2PhotoNLDD2implant(P040K40E3T00)

NLDD2Asher&WetStrip (21+SPM)NitrideSpacerN-WellP-WellNNPPSPADep.PreclnNRCA(SC1+SC2)LININGTEOSDiff 680C,150+-20ASiNSpacer Diff 650C,300+-30AOXSpacer IMP680C,TEOS1000+-25ASPACERETCH(Oxide+SIN)PostCleanNCR(SPMonly)

SPAPOSTTHKTRENCHOX(3100+-480,Avg.=3280A),THINOX(175+-20A)OxideStrip NDH25A(100:1HF60sec)

SPAPOSTOXSTRIPN-PAD(0~45,AVG=10A)CompositeSpacerONO,liningTEOS->SIN->TEOS N+N+Photo (198layer)N+implant1 (A060K51E5T00)N+implant2(P035K15E4T00)Asher&WetStrip(22+SPM&APM)N+Anneal1025RTA020S(1025C,20sN2)P+P+Photo (197layer)P+Implant1 (B005K33E5T00)P+Implant2 (B015K30E3T00)Asher&WetStrip(22+SPM&APM)

N-WellP-WellP+N+N+P+NP&PPDefinitionNSD198maskPSD197maskNSDIMPPSDIMPTwotimesSN+/SP+IMP,toreduceconcentrationbetweenS/DandWELLtooptimizeleakage.

Highdoseimp.willcausePRresiduemoreeasilyESDESDPHOTO(72HRQTIMEtoP+IMP1),110layerESDOVERLAYESDCD-PHESDADIYEDEFECTINSPECTIONYEDEFECTINSPECTIONESDIMP(B050K25E3T00)ESDASHERESDWETSTRIP(NPRRM)ESDASIESDBackupSlipESD:ElectroStaticDischarge.ElectronwillgenerateinProcessanddamagecircuitbydischargingwithHighVoltageandHighcurrent.Pre-clnNRCAM(100:1HF60sec)SABCapOx SRO350AP+RTAAnnealingPVD1015RTA010S(1015C,10sec)

PostP+RTATHK-POPAD(3400+-400,Avg.=3470A)SABPhoto (155layer) SalicideBlockEtch Dry+WETETCHSABAsher+wetstrip(32+SPM&APM)SABTHKTRENCHOX-POPAD(3100+-400,Avg.=3000A)N-WellP-WellSalBlkPETEOSP+P+N+N+SalicideBlockPre-COoxideRMNDH25A(100:1HF60sec)

ChangeCoPod&Cassette

SalicideDeposition(E30C85N20)(Arsputter30A/Co85A/TiN200A)Salicide1stRTA (530oC30secN2)

N-WellP-WellCOSailcideP+P+N+N+SalicideSelectiveEtchNSC1M2SC1NH4OH:H2O2:H2O

1:1:5M2

H3PO4:HNO3:CH3COOH

70:02:12

Salicide2ndRTA(850oC30secN2)CoSalicideArsputter30Awilletchnatureoxide30A;PE-SION400ADEPCVDHKSION400highkmaterialChangeBEOLPod&Cassette

ILDBPTEOSDepositionCVD31B65P2K480CBPTEOSFLOWIMP 650C,N2,30min CRCleanNCR(SPMonly) PETEOSdepositionCVD10.5K

ILDPRE-CMPTHK-PPAD(12500+-900,Avg.=12350A)OxCMPforILD 7.5K

ILDPOST-CMPTHK-PPAD(7500+-600,Avg.=7560A)ILDCRCleanNCR(SPMonly)N-WellP-WellP+P+N+N+2kÅSABPSG10.5kÅPETEOS400ÅSIONILDDepositionCTDARCCVD(SiON/OX-200A/600A)ScrubberCTPhoto(156layer)ADICD0.255+/-0.02um

AEICD0.225+/-0.025umCTetch CTAsher41ChangeCoPod&Cassette

CTwetstrip(sendtoFAB1Backup) NPRRMSC1M ChangeBEOLPod&Cassette

N-WellP-WellP+P+N+N+ContactCONTGLUELAYERPVDETCH100A/IMPTI200A/CVD-TIN50A Silicideannealing(690ºC,N260s) 3.3kÅWCVDDEP WCMP WTi/TiNN-WellP-WellP+P+N+N+W-PlugMET1GLUE(200Ti/250TiN)MET1Acu(4000AlCu/50Ti/300TiN)Scrubber InorganicBARC320AScrubberM1Photo(160layer)ADICD0.22+/-0.015umAEICD0.24+/-0.02umM1etchM1wetstripEKCPureH2AlloyPVD(410C,90sec) Metal1N-WellP-WellP+P+N+N+Met1SROLinerDep.CVDSiliconRichOxideHDP6KÅCVDPE-FSGDep.11.5KÅCVD(FluorinatedSilicateGlass),IMD1CMPIn-situPE-N2treatment&USGCap2K(UndopedSilicateGlass),1.CoverFSGlayer2.PreventF-diffusive.3TopreventmetalavoidOxCMPforIMDIMD1(SiON/OX-600A+200A) Via1Photo(178layer)

ADICD0.285+/-0.02umAEICD0.275+/-0.025umVia1etchVia1Asher&Wetstrip(41+NEKC30)Met1N-WellP-WellP+P+N+N+6kÅHDP11.5kÅPETEOSIMD1&Via1Met1N-WellP-WellP+P+N+N+VacuumBake(300C)VIAGLUELAYER ETCH130/160Ti/70TiN(IMP/CVD) 3.3kÅW Inter-metalDep.(M2~M5)ScrubberSION320Dep.ScrubberInter-metalPho(M2~M5,180-184)ADICD0.26+/-0.02umAEICD0.28+/-0.025umInter-metalEtch(M2~M5)WetstripMet1N-WellP-WellP+P+N+N+160ÅTi/70ÅTiNInter-metalMet1N-WellP-WellP+P+N+N+Met2Met3Met4Met5IMD2~IMD5SROLinerDep.HDP6KÅCVD(Goodfillingcapability，slowgrowthrateandhighcost)PE-FSGDep.11.5KÅCVD(Cheapandhighgrowthrate）IMDx(x=2~5)CMPIn-situPE-N2treatment&USGCap2K

(IMD5Cap3.5K)OxCMPforIMDIMDx(x=2~5)(SiON/OX-600A+200A)Viax(x=2~4)Photo(175-179)

ADICD0.285+/-0.02umAEICD0.275+/-0.025umViax(x=2~4)etchViax(x=2~4)Asher&Wetstrip (41+NEKC30)Met1N-WellP-WellP+P+N+N+Met2SROLinerDep.PE-FSGDep.11.5KÅIn-situPE-N2treatment&USGCap3.5KSurfacenitrigenationIMD5CMPIMD5ARC(SiON/OX-600A+200) Via5PhotoADICD0.4+/-0.04umVia5etchAEICD0.39+/-0.04umVia5Asher&Wetstrip (41+NEKC30)Via5WDep.4000AWC5W_CMPMET6GLUE(200Ti/250TiN)MET6AlCu(8000AlCu/375TiN).M6PhotoADICD0.49+/-0.045um(line)M6etchAEICD0.51+/-0.05umM6wetstripN-WellP-WellP+P+N+N+Met1Met2Met3Met4Met5Met6TopVia&TopMetal10kÅHDPoxidedepPE-SION1.5KDEPCVDPE-SIN6KDEPCVDPDPhotoforbondpadHDPpassivationetchResistStripAlloy-410ºC,30’PVDN-WellP-WellP+P+N+N+Met1Met2Met3Met4Met5Met61.5kÅSION+6kASIN10kÅHDPPassivationQ&AThanks1 為何需要StartOxide?Ans

ForzerolayerPHOprocess,beforePHOPRdeposition,thereneedbufferoxidetoisolatePRmaterialontouchwithSi.ZerolayerisdesignedbyASMLsteppersystem.PreventthelasermarkSirecastbeingre-depositedontoSisurfacedirectly,becauseSiishydrophobiclikeandthesere-depo.Particleisveryhardtoberinseoff.AsthefirstHIGHtemperaturecycleforH-L-Hdenudedzone(oxygenfreetreatment).Pre-setthesurfacecleannessconditionrightafterFabreceivedthenewwafermaterials.ZERO-START WAFERSTART(PTYPE、8-12OHM/SQ)START-OX BCLN1(22220A)SPM60/HF180/APM420/HPM180/HF0START-OX STARTOX(1100C；350A)ZERO-PHO ZEROPHOTO(ALIGNMENTMASKAT55DEG)ZERO-ETCH ZEROFULLYDRYETCH(OX350A+SI1200A)ZERO-ETCH RESISTSTRIPPING(PSC)PARTIALSTRIPZERO-ETCH PRCARO’SSTRIP(ETCH)SPM+APM由上表可以很明顯地看出StartOX的第一個功用，就是不希望為有機成分(C-Hbond)的光阻直接碰觸到矽晶圓表面。在電子級的矽晶圓中，氧及碳雜質是無法完全被移除的，一般的含量約為1016cm-3

左右。除以固溶態(Solidsolution)存在外，也會以微析出物(Micro-precipitates)的形式存在於矽晶圓中。這些絕緣的微析出物將會引致在空乏區(Depletionregion)的電力場(Fieldline)彎曲，而造成局部的電場梯度(Fieldgradient)變大，因此在較低的電壓就有可能造成接面崩潰(Junctionbreakdown)。另一方面碳氧雜質無論是以插入(Interstitial)或替代(Substitutional)的方式固溶於矽晶圓中也容易變成佈植雜質(Dopant)或缺陷集中的中心。

StartOX的另一個用途則是在WAFERSTART刻雷射刻號時高功率雷射入射矽晶圓表面引致的融渣會在STARTOXREMOVE後被移除，不過FAB5目前是使用Soft-laser來作刻號，並不會有這個問問題。另外wafer中总会含有metalion,在wafer背面掺入oxygen,hightemperatureprocesstheoxygeninthewafercantrapthemetalion.Ans Zerolayer2 為何需要Zerolayer?LaserMark?ASMLsteppersystemrequiresazeromarkforglobalalignmentpurpose.ForASML300Btheoverlayspecforsinglemachineis<45nm,formated300Bmachine<75nmandfor300to200machine<95nm.TheoverlayperformanceisthebasiccharacteristicofstateofartStepper.UsezerolayerglobalalignmentmarksystemcanhelptoimprovetheOVLperformance.(OVL156_120)2=(OVL156_0)