SIHG20N50C-E3;中文规格书,Datasheet资料

SiHG20N50C

VishaySiliconix

PowerMOSFET

FEATURES

PRODUCTSUMMARY

•Halogen-freeAccordingtoIEC61249-2-21

Definition

VDS(V)atTJmax.

RDS(on)(Ω)

560

VGS=10V

0.270

•LowFigure-of-MeritRonxQg

•100%AvalancheTested

•HighPeakCurrentCapability

•dV/dtRuggedness

Qg(Max.)(nC)

Qgs(nC)

76

21

Qgd(nC)

Configuration

34

Single

•ImprovedTrr/Qrr

•ImprovedGateCharge

D

•HighPowerDissipationsCapability

TO-247AC

•ComplianttoRoHSDirective2002/95/EC

G

S

S

D

G

N-ChannelMOSFET

ORDERINGINFORMATION

Package

TO-247AC

Lead(Pb)-free

SiHG20N50C-E3

SiHG20N50C-GE3

Lead(Pb)-freeandHalogen-free

ABSOLUTEMAXIMUMRATINGS(TC=25°C,unlessotherwisenoted)

PARAMETERSYMBO

L

LIMIT

500

30

UNIT

Drain-SourceVoltage

Gate-SourceVoltage

VDS

VGS±

V

TC=25°C

TC=100°C

20

ContinuousDrainCurrent(TJ=150°C)e

PulsedDrainCurrenta

VGSat10V

ID

11

A

IDM

80

LinearDeratingFactor

1.8

361

250

W/°C

mJ

SinglePulseAvalancheEnergyb

EAS

PD

MaximumPowerDissipation

W

PeakDiodeRecoverydV/dtc

dV/dt5

V/ns

OperatingJunctionandStorageTemperatureRange

SolderingRecommendations(PeakTemperature)

TJ,Tstg

-55to+150

°C

for10s

300d

Notes

a.Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.

b.VDD=50V,startingTJ=25°C,L=2.5mH,Rg=25Ω,IAS=17A.

c.I≤18A,dI/dt≤380A/μs,V≤V,T≤150°C.

SD

DD

DS

J

d.1.6mmfromcase.

e.Limitedbymaximumjunctiontemperature.

THERMALRESISTANCERATINGS

PARAMETERSYMBO

L

TYP.

MAX.

40

UNIT

MaximumJunction-to-Ambient

MaximumJunction-to-Case(Drain)

RthJA

RthJC

-

-

°C/W

0.5

DocumentNumber:91382

S11-0440-Rev.C,14-Mar-11

1

Thisdatasheetissubjecttochangewithoutnotice.

htTHEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATtp:///

/doc?91000

SiHG20N50C

VishaySiliconix

SPECIFICATIONS(TJ=25°C,unlessotherwisenoted)

PARAMETERSYMBO

Static

O

L

TESTCONDITINSMIN.

TYP.

MAX.

UNIT

Drain-SourceBreakdownVoltage

VDSTemperatureCoefficient

Gate-SourceThresholdVoltage(N)

Gate-SourceLeakage

VDS

VGS=0V,ID=250μA

Referenceto25°C,ID=1mA

VDS=VGS,ID=250μA

500

-

-

-

V

mV/°C

V

ΔVDS/TJ

VGS(th)

IGSS

-

3.0

-

700

-

5.0

±100

25

VGS=±30V

-

-

nA

VDS=500V,VGS=0V

-

ZeroGateVoltageDrainCurrent

IDSS

μA

VDS=400V,VGS=0V,TJ=125°C

-

-

250

0.270

-

Drain-SourceOn-StateResistance

ForwardTransconductance

RDS(on)

gfs

VGS=10V

ID=10A

-

0.225

6.4

Ω

VDS=50V,ID=10A

-

S

Dynamic

InputCapacitance

OutputCapacitance

ReverseTransferCapacitance

TotalGateCharge

Gate-SourceCharge

Gate-DrainCharge

Turn-OnDelayTime

RiseTime

Ciss

-

2451

300

26

2942

V=0V,

V=25V,

GS

pF

Coss

Crss

Qg

-

360

DS

f=1.0MHz

-

-

-

-

-

-

-

-

-

32

76

-

65

Qgs

Qgd

td(on)

tr

VGS=10V

ID=18A,VDS=400V

21

nC

29

-

80

-

27

-

VDD=250V,ID=18A,

R=9.1Ω

ns

Turn-OffDelayTime

FallTime

td(off)

tf

32

-

g

44

-

GateInputResistance

Rg

f=1MHz,opendrain

1.1

-

Ω

Drain-SourceBodyDiodeCharacteristics

MOSFETsymbol

showingthe

integralreverse

p-njunctiondiode

ContinuousSource-DrainDiodeCurrent

IS

-

-

-

-

20

80

D

A

G

PulsedDiodeForwardCurrent

ISM

S

BodyDiodeVoltage

VSD

trr

TJ=25°C,IS=18A,VGS=0V

-

-

-

-

-

1.5

V

ns

μC

A

BodyDiodeReverseRecoveryTime

BodyDiodeReverseRecoveryCharge

ReverseRecoveryCurrent

503

6.7

30

-

-

-

T=25°C,I=I,

dI/dt=100A/μs,V=35V

Qrr

J

F

S

IRRM

Theinformationshownhereisapreliminaryproductproposal,notacommercialproductdatasheet.VishaySiliconixisnotcommittedtoproducethisoranysimilar

product.Thisinformationshouldnotbeusedfordesignpurposes,norconstruedasanoffertofurnishorsellsuchproducts.

2

DocumentNumber:91382

S11-0440-Rev.C,14-Mar-11

Thisdatasheetissubjecttochangewithoutnotice.

/THEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHAT

/doc?91000

SiHG20N50C

VishaySiliconix

TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)

70

100

10

1

V

GS

15V

14V

13V

T=25°C

J

Top

60

50

40

30

20

10

0

TJ=150°C

12V

11V

10V

)

)

A

A

(

(

t

t

n

9.0V

n

e

e

8.0V

7.0V

6.0V

r

r

TJ=25°C

r

r

u

u

C

n

C

n

Bottom5.0V

i

i

a

a

r

r

D

D

,

I

,

I

D

D

0.1

7.0V

0.01

0

6

12

18

24

30

5

6

7

8

9

10

VDS,Drain-to-SourceVoltage(V)

VGS,Gate-to-SourceVoltage(V)

Fig.1-TypicalOutputCharacteristics,TC=25°C

Fig.3-TypicalTransferCharacteristics

40

e

c

n

a

3

2.5

2

V

GS

15V

14V

13V

12V

11V

10V

9.0V

8.0V

7.0V

6.0V

T=150°C

J

Top

ID=17A

t

s

i

s

e

30

20

10

0

R

)

A

(

n

O

t

)

d

n

e

ee

cz

r

r

u

ri

ual

1.5

1

C

n

om

VGS

=10V

Bottom5.0V

S

r

-o

o

i

a

N

(

r

7.0V

t

D

-

n

i

,

I

a

D

r

D

0.5

,

)

n

o

(

S

D

0

R

0

6

12

18

24

30

-60-40-20

0

20406080100120140160

VDS,Drain-to-SourceVoltage(V)

TJ,JunctionTemperature(°C)

Fig.2-TypicalOutputCharacteristics,TC=150°C

Fig.4-NormalizedOn-Resistancevs.Temperature

DocumentNumber:91382

S11-0440-Rev.C,14-Mar-11

3

Thisdatasheetissubjecttochangewithoutnotice.

THEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHAT

/doc?91000

/

SiHG20N50C

VishaySiliconix

105

1000

100

V

=0V,f=1MHz

C=C+C,CShorted

GS

Operationinthisarealimited

iss

C=C

gs

gd

ds

byRDS(on)

rss

gd

C

=C+C

gd

)

104

A

oss

ds

)

(

F

t

p

n

(

C

e

e

c

iss

r

r

u

n

10

1

103

C

n

100µs

a

t

i

c

i

a

p

a

C

a

r

D

1ms

,

I

102

C

C

D

T=25°C

T=150°C

oss

C

10ms

J

SinglePulse

10

rss

0.1

1

10

100

1000

10

100

1000

10000

VDS,Drain-to-SourceVoltage(V)

V

Drain-to-SourceVoltage(V)

DS,

Fig.5-TypicalCapacitancevs.Drain-to-SourceVoltage

Fig.8-MaximumSafeOperatingArea

20

20

ID=17A

)

V

(

V

V

VDS

DS=400V

=250V

=100V

e

g

a

16

12

8

15

10

5

DS

)

t

A

l

o

(

V

t

n

e

e

c

r

r

r

u

u

C

n

o

S

-

i

o

a

t

r

-

D

e

t

a

,

I

D

G

4

,S

G

V

0

0

0

30

60

90

120

25

50

75

100

125

150

QG,TotalGateCharge(nC)

TC,CaseTemperature(°C)

Fig.6-TypicalGateChargevs.Gate-to-SourceVoltage

Fig.9-MaximumDrainCurrentvs.CaseTemperature

100

)

A

(

t

n

e

TJ=150°C

TJ=25°C

r

r

u

10

C

n

i

a

r

D

e

s

r

e

1

v

e

R

,

IS

D

VGS=0V

0.1

0.2

0.5

0.8

1.1

1.4

VSD,Source-to-DrainVoltage(V)

Fig.7-TypicalSource-DrainDiodeForwardVoltage

4

DocumentNumber:91382

S11-0440-Rev.C,14-Mar-11

Thisdatasheetissubjecttochangewithoutnotice.

/THEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHAT

/doc?91000

SiHG20N50C

VishaySiliconix

1

DutyCycle=0.5

0.2

t

n

e

i

s

ac

ne

rn

T

a

ve

ed

ip

t

0.1

c

m0.1

e

fI

f

El

a

0.05

m

d

er

e

aT

z

ih

l

0.02

m

r

o

N

SinglePulse

0.01

10-4

10-3

10-2

0.1

1

PulseTime(s)

Fig.10-NormalizedThermalTransientImpedance,Junction-to-Case(TO-247)

R

D

VDS

V

DS

t

V

p

GS

D.U.T.

VDD

R

g

+

V

-

DD

VDS

10V

Pulsewidth≤1µs

Dutyfactor≤0.1%

IAS

Fig.11a-SwitchingTimeTestCircuit

Fig.12b-UnclampedInductiveWaveforms

V

DS

90%

Q

G

10V

Q

Q

GD

GS

10%

V

VG

GS

t

d(on)

t

r

t

d(off)

t

f

Fig.11b-SwitchingTimeWaveforms

Charge

Fig.13a-BasicGateChargeWaveform

L

Currentregulator

V

SametypeasD.U.T.

DS

Varytptoobtain

requiredI

AS

50kΩ

R

D.U.T

12V

0.2µF

+

-V

g

0.3µF

DD

+

-VDS

I

AS

D.U.T.

10V

tp

0.01Ω

V

GS

3mA

Fig.12a-UnclampedInductiveTestCircuit

I

I

G

D

Currentsamplingresistors

Fig.13b-GateChargeTestCircuit

DocumentNumber:91382

S11-0440-Rev.C,14-Mar-11

5

Thisdatasheetissubjecttochangewithoutnotice.

THEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHAT

/doc?91000

/

SiHG20N50C

VishaySiliconix

PeakDiodeRecoverydV/dtTestCircuit

+

Circuitlayoutconsiderations

D.U.T.

•Lowstrayinductance

•Groundplane

•Lowleakageinductance

currenttransformer

-

+

-

-

+

R

g

•dV/dtcontrolledbyR

g

•DriversametypeasD.U.T.

+

-V

DD

•I

controlledbydutyfactor“D”

SD

•D.U.T.-deviceundertest

Drivergatedrive

P.W.

Period

Period

D=

P.W.

V

=10Va

GS

D.U.T.l

waveform

SD

Reverse

recovery

current

Bodydiodeforward

current

dI/dt

D.U.T.V

waveform

DS

Dioderecovery

dV/dt

V

DD

Re-applied

voltage

Bodydiodeforwarddrop

Inductorcurrent

I

SD

Ripple≤5%

Note

a.V

=5Vforlogicleveldevices

GS

Fig.14-ForN-Channel

VishaySiliconixmaintainsworldwidemanufacturingcapability.Productsmaybemanufacturedatoneofseveralq

ualifiedlocations.ReliabilitydataforSilicon

TechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.Forrelateddocumentssuchaspackage/tapedrawings,partmarking,and

reliabilitydata,see/ppg?91382.

6

DocumentNumber:91382

S11-0440-Rev.C,14-Mar-11

Thisdatasheetissubjecttochangewithoutnotice.

/THEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHAT

/doc?91000

PackageInformation

VishaySiliconix

TO-247AC(HighVoltage)

A

A

4

E

7

ØP

(DatumB)

ØP1

B

R/23

A2

A

E/2

S

ØkMDBM

D2

Q

5

2xR

(2)

D1

D

D

4

1

2

3

Thermalpad

L15

C

L

5

E1

A

SeeviewB

0.01MDBM

ViewA-A

2xb2

3xb

C

2xe

A1

b4

0.10MCAM

(b1,b3,b5)

Planting

Basemetal

DDE

E

(c)

c1

C

C

(b,b2,b4)

(4)

SectionC-C,D-D,E-E

ViewB

MILLIMETERS

INCHES

MILLIMETERS

INCHES

DIM.

A

MIN.

4.58

2.21

1.17

0.99

0.99

1.53

1.65

2.42

2.59

0.38

0.38

19.71

13.08

MAX.

MIN.

0.180

0.087

0.046

0.039

0.039

0.060

0.065

0.095

0.102

0.015

0.015

0.776

0.515

MAX.

0.209

0.102

0.098

0.055

0.053

0.094

0.093

0.135

0.133

0.034

0.030

0.820

-

DIM.

D2

E

MIN.

0.51

MAX.

MIN.

0.020

0.602

0.540

MAX.

5.31

2.59

2.49

1.40

1.35

2.39

2.37

3.43

3.38

0.86

0.76

20.82

-

1.30

15.87

-

0.051

0.625

-

A1

A2

b

15.29

13.72

E1

e

5.46BSC

0.215BSC

b1

b2

b3

b4

b5

c

Øk

L

0.254

0.010

14.20

3.71

16.25

4.29

0.559

0.146

0.640

0.169

L1

N

7.62BSC

0.300BSC

ØP

ØP1

Q

3.51

3.66

7.39

5.69

5.49

0.138

0.144

0.291

0.224

0.216

-

-

c1

D

5.31

4.52

0.209

0.178

R

D1

S

5.51BSC

0.217BSC

ECN:X12-0167-Rev.B,24-Sep-12

DWG:5971

Notes

1.DimensioningandtolerancingperASMEY14.5M-1994.

2.Contourofslotoptional.

3.DimensionDandEdonotincludemoldflash.Moldflashshallnotexceed0.127mm(0.005")perside.Thesedimensionsaremeasuredat

theoutermostextremesoftheplasticbody.

4.ThermalpadcontouroptionalwithdimensionsD1andE1.

5.LeadfinishuncontrolledinL1.

6.ØPtohaveamaximumdraftangleof1.5tothetopofthepartwithamaximumholediameterof3.91mm(0.154").

7.OutlineconformstoJEDECoutlineTO-247withexceptionofdimensionc.

8.XianandMingxinactuallyphoto.

Revision:24-Sep-12

DocumentNumber:91360

1

Fortechnicalquestions,contact:hvm@

THISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENT

ARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHAT/doc?91000

/

LegalDisclaimerNotice

Vishay

Disclaimer

ALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVE

RELIABILITY,FUNCTIONORDESIGNOROTHERWISE.

VishayIntertechnology,Inc.,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,

“Vishay”),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedinanydatasheetorinanyother

disclosurerelatingtoanyproduct.

Vishaymakesnowarranty,representationorguaranteeregardingthesuitabilityoftheproductsforanyparticularpurposeor

thecontinuingproductionofanyproduct.Tothemaximumextentpermittedbyapplicablelaw,Vishaydisclaims(i)anyandall

liabilityarisingoutoftheapplicationoruseofanyproduct,(ii)anyandallliability,includingwithoutlimitationspecial,

consequentialorincidentaldamages,and(iii)anyandallimpliedwarranties,includingwarrantiesoffitnessforparticular

purpose,non-infringementandmerchantability.

StatementsregardingthesuitabilityofproductsforcertaintypesofapplicationsarebasedonVishay’sknowledgeoftypical

requirementsthatareoftenplacedonVishayproductsingenericapplications.Suchstatementsarenotbindingstatements

aboutthesuitabilityofproductsforaparticularapplication.Itisthecustomer’sresponsibilitytovalidatethataparticular

productwiththepropertiesdescribedintheproductspecificationissuitableforuseinaparticularapplication.Parameters

providedindatasheetsand/orspecificationsmayvaryindifferentapplicationsandperformancemayvaryovertime.All

operatingparameters,includingtypicalparameters,mustbevalidatedforeachcustomerapplicationbythecustomer’s

technicalexperts.ProductspecificationsdonotexpandorotherwisemodifyVishay’stermsandconditionsofpurchase,

includingbutnotlimitedtothewarrantyexpressedtherein.

Exceptasexpresslyindicatedinwriting,Vishayproductsarenotdesignedforuseinmedical,life-saving,orlife-sustaining

applicationsorforanyotherapplicationinwhichthefailureoftheVishayproductcouldresultinpersonalinjuryordeath.

CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsucha