Flipchip工艺流程完整版

FlipChip製程1.Metalbump金屬凸塊-C4process(IBM)2.Tape-Automatedbonding捲帶接合-ACFprocess3.Anisotropicconductiveadhesives異方向性導電膠-ACPprocess4.Polymerbump高分子凸塊-C4process5.Studbump.打線成球-ACPprocess(Matsushita)FlipChipconductivemethod-connecttoSubstrate/PCBC4:controlledcollapsechipconnectionACF:anisotropicconductivefilmACP(ACA):anisotropicconductiveAdhesivepasteKingbondTrainingCourseKingbondTrainingCourseVariousflipchiptechnologiesPS:WIT(Wireinterconnecttechnology)TAB(Tape-automatedbonding)KingbondTrainingCourseVariousflipchiptechnologiesKingbondTrainingCourseStudBumpFlipChipBondUnderfillCureovenCureovenSBBProcessC4:ControlledCollapseChipConnectionProcessKingbondTrainingCourseReflowovenFlipchipbonderFluxcleanerUnderfilldispenserCureoven1.Fluxcoatingorre-printing2.MountingHeatingCleaningDispensingHeatingWaferbumpBumpbysolderACP:AnisotropicConductivePasteProcessReflowovenFlipchipbonderUnderfilldispenserCureovenThermosettingDispensingHeating1.PrinttheACA2.AlignmentWaferbumpBumpbyAgKingbondTrainingCourseACF:AnisotropicConductiveFilmProcessACFPre-setterFlipchipbonderPressandcureequipmentACFPre-setting1.Mounting2.Heating3.Press1.Heating2.PressWaferbumpBumpbyAuKingbondTrainingCourseOvercoatwithpolymideandopenthebumpareas.PatternwettablebasemetalCoatchipwithpolymide,openviasovereachpadUseddry-filmlift-offprocesstodefinebasemetalandsolderoneachpadPatternaluminumtore-routeI/OtoonareaarrayConventionalchipwithaluminumI/OpadsaroundtheperimeterTack,Flux&ReflowPrint,Place&ReflowKingbondTrainingCourseFCTBumpStructureSiliconwaferUBM-UnderBumpMetallurgySolderBumpFinalMetalPadDiePassivationWaferBumpKingbondTrainingCourse1.蒸鍍Evaporation2.濺鍍Sputter3.電鍍Electroplating4.印刷Printedsolderpastebump5.錫球焊接SolderballbumpingorStudbumpbonding(SBB)6.無電鍍鎳ElectrolessnickeltechnologiesMetalbumpmethodUBMKingbondTrainingCourse1.95Sn/5Pb,97Sn/3Pb高溫錫鉛合金2.63Sn/37Pb低溫錫鉛合金3.Ni鎳4.Au金5.Cu銅MaterialofsolderbumpKingbondTrainingCourseSiliconWaferarriveswithanaluminumbasedfinalmetalpadanddiepassivation.Wafercanbeprobedpriortobumping.Waferbump(Printedmethod)Process:WafercleanKingbondTrainingCourseTheUnderBumpMetallurgyisaddedbyFCTthroughsputteredlayersofAl,Ni-V,&CuWaferBump(Printedmethod)Process:SputterUBMAl/Ni/Cu(Au)KingbondTrainingCourseUBMconsist3layer:1.Adhesionlayer:Ti,Cr,TiW提供鋁墊(Alpad)與護層(Passivationlayer)有較強之黏著性2.Wettinglayer:Ni,Cu,Mo,Pt高溫迴焊時錫球可完全沾附而成球3.Protectivelayer:Au保護Ni,Cu等免於被氧化.WaferBump(Evaporationmethod)Process:SputterUBMKingbondTrainingCourseApplyphotoresist,PatternanddevelopWaferBump(Printedmethod)Process:Photo-resistKingbondTrainingCourseEtchtoformUBMcapWaferBump(Printedmethod)Process:EtchUBMKingbondTrainingCourseDepositsolderpasteandreflowtoformbumpWaferBump(Printedmethod)Process:Printsolderpaste&reflowSn/Pb63/37低溫95/5高溫KingbondTrainingCourseSamplemeasurebumpheight,bumpshearandbumpresistance.WaferBump(Printedmethod)Process:InspectionKingbondTrainingCourse1.Evaporativebumpsare125milsindiameterand100milshigh.2.Platedbumpsare125-175milsindiameterand25-100milshigh.Thetypicalsizeofabumpbeforereflow:KingbondTrainingCourse製程名稱:晶片背面黏貼Wafermounting生產設備:晶片背面黏貼機檢驗設備:顯微鏡製程說明:將膠帶黏貼於晶片背面,防止晶片切割時分離.設備名稱:檢驗重點項目:1.晶片方向Dieorientation2.氣泡Airbubble3.表面皺紋Wrinkle製程圖例:模框晶片KingbondTrainingCourseProcess:InspectwaferKingbondTrainingCourse晶片切割DieSaw生產設備:晶片切割機檢驗設備:顯微鏡製程說明:依據晶粒尺寸大小,利用切割刀具,將晶片切割成單顆旳晶粒.1.切割道寬度Streetwidth2.崩裂Crack製程圖例:晶粒晶片設備名稱:檢驗重點項目:KingbondTrainingCourse上晶片FlipChip生產設備:晶片上片機檢驗設備:X-RAY影像觀測機製程說明:依據晶粒尺寸大小,利用上晶片機將單顆旳晶粒,分別植入基板或模組.1.Bump定位與焊接情形2.晶片崩裂Crack,有無短路,斷路製程圖例:設備名稱:檢驗重點項目:ChipBumpSubstrate/ModuleKingbondTrainingCourse上晶片流程FlipChipflowPickupFlipPrecisionAddedFluxBonding/Reflow基板/模組C4processKingbondTrainingCourse上晶片流程FlipChipflowPickupFlipPrecisionAddedfilm/pasteBondingwithheating基板/模組ACF&ACPKingbondTrainingCourse填膠Under-fill設備名稱:生產設備:填膠機檢驗設備:X-RAY影像觀測機製程說明:利用填膠機將已完毕植入基板或模組之每單顆旳晶粒,分別以填膠注入.1.有無球脫或晶圓偏移製程圖例:檢驗重點項目:KingbondTrainingCourse

WhydoyouneedtounderfillSolderjointreliabilityforflipchipsisbasedonseveralfactors:1.Bumpalloytype2.Solderjointheight(standoff)3.DistancetoneutralpointorDNP.(Ameasurementofthecenterofmassofthedietothefarthestbumponthedie,typicallythecornerbump.)KingbondTrainingCourse填膠製程Under-fill1.毛細作用型Capillarytype):利用毛細力造成膠材之流動.2.異方向導電膠(Anisotropicconductiveadhesive):低溫製程,分膏狀(paste)和膜狀(film)3.前置型(Pre-appliedtype):小尺寸晶片(<6mm),點膠(Dieattachment)後再迴焊(Reflow)KingbondTrainingCourse填膠製程Under-fill製程與材料之限制:1.加強迅速填膠與固化能力2.提昇其介面之黏著力3.較低旳吸水率4.提昇低錫鉛球間距內旳流動性5.加強可重工性(rework)KingbondTrainingCourse

製程名稱:填膠烘烤Underfillcure製程說明:生產設備:填膠烤箱檢驗設備:將填膠後之產品,利用烤箱進行烘烤作業,以消除內部所留之應力及固化填膠.顯微鏡斷層掃瞄機SAT製程圖例:烘烤檢驗重點項目:1.膠體Moldbody設備名稱:KingbondTrainingCourse

製程名稱:雷射正印Lasermarking生產設備:雷射正印機檢驗設備:將文字/字號以雷射正印到晶片背面區域,用以辨識產品及批號追蹤等等.設備名稱:顯微鏡製程圖例:

檢驗重點項目:1.文字內容Content2.位置方向Orientation3.易辨讀Legibility文字基板/模組製程說明:裸晶背面KingbondTrainingC