高压碳化硅功率UMOSFET的元胞设计与单粒子损伤模拟研究

高压碳化硅功率UMOSFET的元胞设计与单粒子损伤模拟研究摘要：高压碳化硅功率UMOSFET是一种新型的半导体器件，在实际应用中有着重要的作用。本文基于该器件中的元胞设计和单粒子损伤模拟，对其特性进行了研究。通过对元胞中不同参数的调整，确定了最优元胞设计，并利用单粒子损伤模拟技术分析了不同辐射情况下该器件的损伤程度。结果表明，在最优元胞设计下，该UMOSFET的性能达到最佳状态，并能够在不同辐射下保持较高的稳定性。

关键词：高压碳化硅；功率UMOSFET；元胞设计；单粒子损伤模拟；稳定性。

引言

在现代电子科技中，UMOSFET是一种非常重要的功率器件。近年来，高压碳化硅UMOSFET作为一种新型的半导体器件，由于其具有高温、高压、高频等优异的性能表现，得到了越来越广泛的应用。其主要应用于高速运动控制系统、高功率工业动力系统、高性能计算机、新能源发电等领域中。为了提高其性能和稳定性，并使其在实际应用中能够更好地发挥作用，需要对其元胞设计和单粒子损伤模拟进行研究。

方法

本文实验使用的高压碳化硅UMOSFET器件从结构上主要分为两部分：内部和外部。内部是由n型碳化硅基底、n型碳化硅上部分层、n型碳化硅沟槽层、p型碳化硅阱层、n型碳化硅沟槽控制层和n型碳化硅源/漏极区组成的。外部由铝烧结电极、氧化铝层、工艺金属保护层、晶圆背面金属保护层等构成。

在元胞设计方面，本文采用了L-Edit软件建立了高压碳化硅UMOSFET的二维图像，并确定了元胞内的各项参数，包括n型碳化硅基底厚度、n型碳化硅上部分层厚度、n型碳化硅沟槽层厚度、p型碳化硅阱厚度、n型碳化硅沟槽控制层厚度和n型碳化硅源/漏极区宽度等。

在单粒子损伤模拟方面，本文采用了SRIM软件对高压碳化硅UMOSFET进行了模拟。SRIM是一种基于MonteCarlo方法的重离子相互作用模拟软件，可用于计算各种材料在单粒子直线轨迹下的辐射效应。

结果和讨论

通过对元胞不同参数的调整，本文确定了最优元胞设计方案，并在该条件下对高压碳化硅UMOSFET进行了单粒子损伤模拟分析。结果表明，在最优元胞设计下，高压碳化硅UMOSFET具有优异的性能，并能够在不同辐射情况下保持较高的稳定性。

结论

本文通过对高压碳化硅UMOSFET的元胞设计和单粒子损伤模拟研究，提出了具有实用价值的建议，为该器件的实际应用提供了更高水平的支持和保障Abstract:

ThehighvoltagesiliconcarbideUMOSFETwithexcellentperformanceandstabilityunderdifferentradiationconditionsisdesignedandsimulatedinthispaper.Thedeviceiscomposedofan-typesiliconcarbidesubstrate,ap-typesiliconcarbidetrench,asilicondioxidelayer,agateelectrode,asilicidelayer,analuminumsinteredelectrode,anoxidelayer,aprocessmetalprotectionlayer,andabackmetalprotectionlayer.

Intermsofcelldesign,theL-Editsoftwareisadoptedtoestablishatwo-dimensionalimageofthehighvoltagesiliconcarbideUMOSFETanddeterminetheparametersofthecell,includingthethicknessofthen-typesiliconcarbidesubstrate,theupperlayerofn-typesiliconcarbide,thethicknessofthen-typesiliconcarbidetrenchlayer,thethicknessofthep-typesiliconcarbidetrench,thethicknessofthen-typesiliconcarbidetrenchcontrollayer,andthewidthofthen-typesiliconcarbidesource/drainregion.

Inthesimulationofsingleparticledamage,theSRIMsoftwareisusedtosimulatethehighvoltagesiliconcarbideUMOSFET.SRIMisaMonteCarlobasedsoftwareforsimulatingheavyioninteraction,whichcanbeusedtocalculatetheradiationeffectsofvariousmaterialsundersingleparticlelineartrajectory.

Byadjustingtheparametersofthecell,theoptimalcelldesignschemeisdetermined,andthesingleparticledamagesimulationanalysisofthehighvoltagesiliconcarbideUMOSFETisconducted.TheresultsshowthatthehighvoltagesiliconcarbideUMOSFEThasexcellentperformanceandstabilityunderdifferentradiationconditionsintheoptimalcelldesign.

ThroughthestudyofthecelldesignandsingleparticledamagesimulationofthehighvoltagesiliconcarbideUMOSFET,practicalsuggestionsareproposedandhigher-levelsupportandguaranteeareprovidedforthepracticalapplicationofthedeviceInaddition,furtherresearchisneededtoinvestigatethelong-termreliabilityofthehighvoltagesiliconcarbideUMOSFETunderharshradiationenvironments.Thiscanbeachievedbyconductingmoreextensivetestingandexperimentation,includinglong-termradiationexposuretestinginspaceenvironmentsornuclearpowerplants.

Furthermore,optimizationofthecelldesigncanalsobeexploredtoreducetheimpactofradiationdamageandimprovedevicereliability.Forexample,theuseofalternatingp-typeandn-typesiliconcarbidelayersintheepitaxialgrowthprocesscanimprovecarriermobilityandreduceradiation-inducedlatticedamage,leadingtohigherdeviceperformanceandstability.

Inconclusion,thehighvoltagesiliconcarbideUMOSFETisapromisingdeviceforhigh-powerandhigh-temperatureapplicationsinharshradiationenvironments.Theresultsofthisstudydemonstratethedevice'sexcellentperformanceandstability,andpracticalsuggestionsforfurtheroptimizationandtestinghavebeenproposed.Withcontinuedresearchanddevelopment,thehighvoltagesiliconcarbideUMOSFEThasthepotentialtorevolutionizemodernelectronicsandmeetthegrowingdemandforhigh-performancedevicesinextremeenvironmentsInadditiontothepotentialapplicationsinharshradiationenvironments,highvoltagesiliconcarbideUMOSFETsalsoholdpromiseinseveralotherfields.Onepromisingareaisinthedevelopmentofhigh-powerelectronicsforelectricvehicles.Duetothehighpowerrequirementsofelectricvehicles,conventionalsilicon-basedpowerdevicesarelimitedintermsoftheirpowerdensityandefficiency.Withitssuperiormaterialproperties,includingawiderbandgapandhigherthermalconductivity,siliconcarbideisanattractivealternative.

Therearealsopotentialapplicationsinrenewableenergysystems,suchassolarandwindpower,wherehighvoltagesiliconcarbideUMOSFETscouldimproveefficiencyandreliability.Inparticular,thesedevicescouldenablethedevelopmentofhigh-powerinvertersforrenewableenergysystems,whicharecurrentlylimitedbytheperformanceofconventionalsilicon-baseddevices.

Furthermore,thedevelopmentofhighvoltagesiliconcarbideUMOSFETscouldalsohavesignificantimplicationsfortheaerospaceindustry.Thesedevicescouldbeusedinthedevelopmentofadvancedpowerelectronicsforspacecraft,satellites,andotherhigh-altitudeapplications.Additionally,thehigh-temperatureperformanceofthesedevicescouldproveusefulinthedevelopmentofadvancedpropulsionsystemsforspaceexploration.

Overall,thedevelopmentofhighvoltagesiliconcarbideUMOSFETsrepresentsasignificantstepforwardinthefieldofpowerelectronics.Withtheirsuperiormaterialpropertiesandadvancedperformancecharacteristics,thesedeviceshavethepotentialtorevolutionizemodernelectronicsandenableanewgene