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Chap1.IntroductiontoMaterialsChap1.IntroductiontoMaterialsScienceandChap2.InorganicNon-metallicChap3.MetallicMaterialsandChap4.PolymerChap5.RenewableEnergyMaterialsandChap6.SolarChap7.Chap8.FeaturesofSpecializedChap9.SelectiveEnglishforMaterialsScienceandChapChap1.IntroductiontoMaterialsScienceandEngineeringUnit1MaterialsScienceandUnit2ClassificationofUnit3ChemicalBandingandSolidUnit4Structure-PropertyRelationshipofUnit1MaterialsScienceandDefinitionofClassesof1 Unit2Unit2ClassificationofChemicalMetallicInorganicNonmetallicOrganicPolymerCompositeStructureFunctionalInformationAerospaceEnergyBiomedical单晶材料:(SingleCrystal多晶材料:(Polycrystalline非晶态材料:(Amorphous准晶材料:(Quasicrystalline2Unit3ChemicalUnit3ChemicalBondingandSolidAtomicTheelectronicstructureofChemicalTheatomicnumberofanatomindicatesthenumberofprotons(positivelychargedparticles)whichareinitsnucleus,andinaneutralatomtheatomicnumberisalsoequaltothenumberofelectronsinitschargecloud.Alltheelementshavebeenclassifiedaccordingelectronconfigurationintheperiodic3TheTherelativeatomicmassofanelementisthemassingramsof6.023×1023atoms(Avogadro’snumberNA)ofthatelement.3.2TheelectronicstructureofQuantumnumbersarethenumbersinanatomassignelectronstodiscreteenergyTheenergyleveltowhicheachelectronbelongsisdeterminedbyfourquantumnumbers.TheprincipalquantumnumberThesubsidiaryquantumnumberThemagneticquantumnumberElectronspinquantumnumberElectronPauliexclusionThisprinciplestipulatesthateachelectronstatecanholdnomorethantwoelectrons,whichmusthaveoppositespins.7s7p6s6p6d6f5s5p5d5f4s4p4d4f3s3p3d2s4ElectronsElectronswiththesamesubsidiarynumberhaveasmanyparallelspinsasElectronegativeelementsarenonmetallicinnatureandacceptelectronsinchemicalreactionstoproducenegativeions,oranions.Electronegativitydescribesthetendencyofanatomtogainanelectron.
氢键(hydrogenbond),是氢原(氟、氧、氮等)以共价键结合,若与电负性大的原子Y(与相同的也可以)接近,在X与Y之间以氢为媒介,生成X-H…Y形式的一种特殊的分子间相互作用,称为氢键(X与Y可以是同一种类原子, 分子之间的氢键)。53.3Chemical
Atomic sandFNFAFN:FA:FR:BondingE
Primary tomicIonicForatomic
ENEA
Ionicbondingisalwaysfoundincompoundsthatarecomposedofbothmetallicandnonmetallicelements,elementsthataresituatedatthehorizontalextremitiesoftheperiodictable.6
ZZ
Interionic
ZZ 0 1 0
1
4
ZZ
an
00
0 1 0
e
e
4 anZ1,Z2=numberofelectronsremovedoraddedfromtheatomsduringtheionformatione=electrona=interionicseparation ExampleIftheattractive betweenapairofMgandSis1.49×10NandiftheSionhasaradiusof0.184nm,calculateavaluefortheionicradiusoftheMgioninnanometers.ZZe
Materialswithcovalentbondingarecharacterizedbybondsthatareformedbysharingofvalenceelectronsamongtwoormoreatoms.Q
4aa
ZZ
(2)(2)(1601019C)24[8.851012C2(Nm2)](149108N)7MetallicMetallicbondingoccursinsolidInmetalsinsolidstate,atomsarepackedrelativelyclosetogetherinasystematicpatternorcrystal
(VanDerwaalsThedriving forsecondarybondingistheattractionoftheelectricdipolescontainedinatomsorAnelectricdipolemomentiscreatedwhentwoandoppositechargesare
VanDerwaalsAdipolemomentisdefinedasthechargevaluemultipliedbytheseparationdistancebetweenpositiveandnegativecharges,ordipoleqmagnitudeofelectricdseparationdistancebetweenthecharge
Ifthe ctionsarebetweentwodipolesthatareinatomsormolecules,werefertothemas
Whenaninduceddipoleinctswithamoleculethathasapermanentdipolemoment,werefertothisinctionasaDebyeinction. H8 Iftheinctionsarebetweenmoleculesthatarepermanentlypolarized,werefertotheseasKeesominction.
Thesebondingsarisebecausetheasymmetricaldistributionofelectronchargedistributionintheseatomscreateselectricdipoles.
PermanentDipolebondsexistbetweenadjacentpolarH HH
%ioniccharacter(1(1/4)(XXXandXaretheelectronegativitiesoftheatomsAandBinthecompoundIonicIonicbondingPrimaryatomicbondsCovalentMetallicPermanentdipoleSecondaryatomicFluctuatingdipoleMaterialsSciencedealswiththerelationshipbetweenmacroscopicpropertiesandthemicroscopic9 (pfor(pfor(nforAsinglesemiconductorcrystalstructurecanbeselectivelydopedwithtwodifferentkindsofimpuritiesthatwillformadjacentp-typeandn-typesemiconductors.Thetransitionbetweenthetwotypesofsemiconductorsisthep-njunctionandiswhereelectronsandholes Astheelectronsenterthep-typeregion,fillingtheholes,theatoms Astheelectronsenterthep-typeregion,fillingtheholes,theatoms negativelychargedwhiletheatomsleftbehind,withfewerelectron,andnew epositivelycharged.theprocesscanbeconsideredasaflowofholesoracurrentflowofpositivelychargedvacancies,whichisoppositetotheelectronflow.Fundamentalsofintegratedcircuits(IC)集成电 Bell
20002000NobelPrizeinPhysicsTexasInstruments,in1958Typicalwaferwithanarrayof 磁滞回磁滞回Ref.ElectronicRef.ElectronicMaterialsScience,EugeneA.Irene,AJohnWiley&Sons,Inc.,Learning3-4studentsperSci
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