【纳米技术：器件设计与应用】

SmartEngineeringSystems:DesignandApplications

SeriesEditor:SumanLataTripathi

Aimedatseniorundergraduatestudents,graduatestudents,academicresearchersandprofessionals,thisserieswillfocusonthedesignofsmartengineeringsystemsandtheirdiverseapplications.Theserieswillcoverimportanttopics,includingorganicelectro-nicsandapplications,smartengineeringmaterials,designanddevelopmentofVLSIcircuitswithartificialintelligencetechniques,smartandintelligentsolutionsforenergytechnologies,andintelligentcommunicationssystemsandsensornetworks.

InternetofThings:RoboticandDroneTechnology

NitinGoyal,SharadSharma,ArunKumarRanaandSumanLataTripathi

Nanotechnology:DeviceDesignandApplications

ShilpiBirla,NehaSinghandNeerajKumarShukla

Formoreinformationaboutthisseries,pleasevisit:

/Smart-

Engineering-Systems-Design-and-Applications/book-series/CRCSESDA

NANOTECHNOLOGY

DeviceDesignandApplications

Editedby

ShilpiBirla,NehaSingh,andNeerajKumarShukla

Firsteditionpublished2022

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ISBN:978-1032-11523-8(hbk)

ISBN:978-1032-11538-2(pbk)

ISBN:978-1003-22035-0(ebk)

DOI:

10.1201/9781003220350

TypesetinTimes

byMPSLimited,Dehradun

v

Contents

Preface ix

Acknowledgements xi

Contributors xiii

Editors xvii

Chapter1AnOverviewofCurrentTrendsinHafniumOxide–Based

ResistiveMemoryDevices1

LalitKumarLata,PraveenK.Jain,AbhinandanJain,andDeepakBhatia

Chapter2NanotechnologyforEnergyandtheEnvironment19

Professor(Dr.)KomalMehta

Chapter3NanotechnologytoAddressMicronutrientandMacronutrient

Deficiency 35

ShivaSharma,ManishaRastogi,andNehaSingh

Chapter4Nanomaterials61

Professor(Dr.)KomalMehta

Chapter5ImpactofNanoelectronicsintheSemiconductorField:Past,

PresentandFuture 75

G.BoopathiRaja

Chapter6Nanoelectronics93

S.Dwivedi

Chapter7EvolutionofNanoscaleTransistors:FromPlannerMOSFETto

2D-Material-BasedField-EffectTransistors119

Dr.KunalSinha

Chapter8MemoryDesignUsingNanoDevices137

DeepikaSharma,ShilpiBirla,andNehaMathur

viContents

Chapter9NanotechnologyintheAgricultureIndustry157

SujitKumar,NDSpandanagowda,RiteshTirole,andVikramadityaDave

Chapter10RecentAdvancementsintheApplicationsofZnO:AVersatile

Material175

ChandraPrakashGupta,andAmitKumarSingh

Chapter11SRAMDesigningwithComparativeAnalysisUsingPlaner

andNon-planerNanodevice189

NehaMathur,DeepikaSharma,andShilpiBirla

Chapter12AStudyofLeakageandNoiseTolerantWideFan-inOR

LogicDominoCircuits203

AnkurKumar,SajalAgarwal,VikrantVarshney,

AbhilashaJain,andR.K.Nagaria

Chapter13PotassiumTrimolybdatesasPotentialMaterialforFabrication

ofGasSensors227

AditeeJoshi,andS.A.Gangal

Chapter14CarbonAllotropes-BasedNanodevices:Graphenein

BiomedicalApplications241

SugandhaSinghal,MeenalGupta,Md.SabirAlam,

Md.NoushadJaved,andJamilurR.Ansari

Chapter15C-DotNanoparticulatedDevicesforBiomedicalApplications271

RiteshKumar,GulshanDhamija,JamilurR.Ansari,Md.NoushadJaved,andMd.SabirAlam

Chapter16Nanotechnology:AnEmergingandPromisingTechnology

fortheWelfareofHumanHealth301

J.ImmanuelSuresh,andM.S.SriJanani

Chapter17HybridPerovskiteSolarCells:Principle,Processingand

Perspectives315

AnanthakumarSoosaimanickam,

SaravananKrishnaSundaram,andMoorthyBabuSridharan

Contentsvii

Chapter18EnergyStorageSystemsinViewofNanotechnologytowards

WindEnergyPenetrationinDistributionGeneration

Environment 349

DimpySood,RiteshTirole,andSujitKumar

Index363

ix

Preface

Nanotechnologyhasmajorlycontributedtoadvancementsincomputingandelectronics,forfaster,smallerandmorecompactandhandysystemsthatcanhandleandstorehugeamountsofinformationintheformofdata.Theseadvancingapplicationsinclude:nanotransistors,MRAMs,ultra-high-definitiontelevisionsanddisplays,flexibleelectronics,IoTandflashmemories.Theothersectorthatgetsthemaximumbenefitfromnanotechnologyismedicalandthehealthcareapplications.Nanotechnologyhashelpedinbroadeningthemedicalarea,knowledgeandcures.Nanomedicine,oneoftheemergingapplicationsofnanotechnology,hasgreatlyhelpedthebiomedicalfieldbygivingprecisesolutionsfordiagnosisofdiseaseandtreatment.Nanomaterialsarenowadaysusedinpharmaceuticalsciencesandtechnology.Afewotheremergingareasofnanotechnologyaredrugdeliveryandbiosensors.Thenextfieldthatexcelswiththehelpofnanotechnologyistheenergysector.Nanotechnologyhasgivenalternativeenergyapproachestoreplacethetraditionalenergysourcestomeetdailyincreasingenergydemands.Theyhavedevelopedthin-filmsolarpanels,windmillbladesandquick-chargingbatteriesasanalternative.Nanotechnologynowalsohelpscleandrinkingwaterthroughrapid,low-costdetectionandtreatmentofwaterimpurities.

Nanotechnologyisoneoftheemergingareas,havingapromisingfuturewithmanybreakthroughsthathavechangedandfurtherbringvariousnewtechnologicaladvancestoawiderangeofapplications.Thepurposeofthisbookistointroducenanotechnologyonalevelthatexploresthevariousapplicationsofnanotechnologythatarediscussedbelow.Itwillgiveaflavortothepeoplewhoareinresearchorinterestedexploringfuturepossibilities.Itwillalsocreateinterestindifferentareaswherenanotechnologyhascreatednewpossibilities.Thisbooksaimstoexploretheareaofnanotechnologyanditsvariousemergingapplications.

ChapterOrganization

Thebookisorganizedinto18chaptersasfollows:

Chapter1

providesaquickoverviewofevolvingmemorytechnologywithafocusonmaterialsusedinRRAM,themethodforresistanceswapping,RRAMoutputparameters,themethodsusedtoenhancetheperformanceofHfO2-basedRRAMdevices,problemsassociatedandpotentialpossibilitiesofRRAMdevices.

Chapter2

presentsthelatestdevelopmentsinthefieldofnanotechnologywithafocusonenergyandtheenvironment,whichincludesmaterialsbasedonnanotechnology,theirprocessesandapplications,thenewgenerationofhighlyefficientsolarcellsanddevicesforenergystorageandenergysaving.

Chapter3

evaluatestheefficiency,advantages,disadvantagesandapplicationsofnanocarriersinaddressingmicronutrientandmacronutrientdeficiency.

xPreface

Chapter4

focusesonunderstandingtheprocessthattakesplacewhileapplyingnanoparticlesormaterialsascatalysts,withsomeinsightonpotentialhealthandenvironmentalrisksthatareassociatedwiththeuseofnanomaterials.

Chapter5

discussestheimpactofnanoelectronicsinthesemiconductorfield,focusingonexperience,presentdevelopmentandfutureopportunitiesinaclearmanner.

Chapter6

onnanoelectronicsisaconciseefforttooutline,structureandexplainvarioustopicsintherelatedfieldinanutshell.

Chapter7

presentsgradualdevelopmentofmodern-dayFETdevices,frommicrontechnologytonanotechnology;fromMOSFETdevicestoFinFETandTFETdevices;andfinallytheFETstructurewith2Dmaterialsareanalyzedwiththeiradvantagesandchallenges,asreportedbyseveralresearchers.

Chapter8

containsthedesignof6TSRAMcellat32nmbyusingCMOS,FinFETandCNTFETtechnologies.

Chapter9

examinesnanotechnology’scurrentdevelopmentsandpresentsselectedrecentresearchtothemostdemandingchallengesandexcitingprospectsinthefoodstuffindustryandfarmingengineering.

Chapter10

presentsthelatestadvancementofZnOmaterialforthin-filmheterojunction-basedstructuresandtheirrecentapplicationsinUVdetectors,gassensors,memorydevicesandotherapplications.

Chapter11

studiesnonplanardevices,likeFinFETforreducedshort-channeleffectsduetosuppressedleakagecurrent,onconventionalaswellasSOIwafers.

Chapter12

shedslightonthemethodsusedbyresearchersallovertheworldtoimprovetheperformanceofwidefan-inORlogicdominocircuitsinthefieldofsubmicronVLSIdesigntoovercomeleakagecurrentbymodifyingtheevaluationnetwork.

Chapter13

discussestheuseofnanowiresofmolybdateswithK+group(K2Mo3O10.4H2O)grownusingchemicalmethodpossesspotentialasexceptionallysensitivegas-sensingmaterialsatroomtemperature.

Chapter14

brieflydiscussesthephysicalandchemicalproperties,synthesisandbiomedicalapplicationofgraphenenanomaterials.

Chapter15

studiesC-dots,whichincludefullerene,nanotubes,nanodiamonds,carbonnanofibers,graphemeandotherallotropes,forbiomedicalapplicationsduetotheiruniqueandsuperiorpropertieslikeprominentbiocompatibility,highwatersolubility,optimalperformanceforenergyconservation,goodphoto-stability,photoluminescencecharacteristics,easeofindustrialscaleupandlowproductioncost.

Chapter16

shedslightonuseofnanotechnologyforpowerfulinnovativemodificationsinhealthcareandbiomedicalapplications,likediagnosticanalysisandtherapeuticapproaches.

Chapter17

isfocusedonsummarizingbasictrendsofhybridorganoleadhalideperovskitesolarcellsandtheperspectivesofthesematerialsforfuturesolarenergyharvestingapplications.Variousdeviceapproachesofthehybridperovskitesolarcellswithdifferentmaterialsareconciselyaddressed.

Chapter18

providesacomprehensivestudyandacomparisonofvarioustypesofenergystoragesystemsavailabletoincreasewindenergypotentialandtoenhancepowersmoothinginawindenergygenerationsystem.

xi

Acknowledgements

Editorswouldliketothankalltheauthorsandthereviewerswithoutwhichthisbookwouldnotbepossible.Theeditorsarealsothankfultotheirrespectiveorganizationsfortheircontinuoussupportandencouragement.

xiii

Contributors

SajalAgarwal

DepartmentofElectronicsEngineeringRajeevGandhiInstituteofPetroleum

Technology

Jias,India

Md.SabirAlam

NIMSInstituteofPharmacy

NIMSUniversity

Jaipur,Rajasthan,India

JamilurRAnsari

FacultyofPhysicalSciences

PDMUniversity

Bahadurgarh,Haryana,India

DeepakBhatia

DepartmentofElectronicsand

CommunicationEngineering

RajasthanTechnicalUniversity

Kota,India

ShilpiBirla

DepartmentofElectronics&

CommunicationEngineering

ManipalUniversityJaipur

Jaipur,Rajasthan,India

SpandanagowdaN.D.

DepartmentofElectricaland

ElectronicsEngineering

Jain(Deemed-to-be-University)

Bengaluru,Karnataka,India

VikramadityaDave

DepartmentofElectricalEngineeringCollegeofTechnologyand

Engineering,Udaipur

Rajasthan,India

GulshanDhamija

UniversitySchoolofBasic&Applied

Sciences

GuruGovindSinghIndraprastha

University

DwarkaSector16C,NewDelhi,India

S.Dwivedi

S.S.JainSubodhP.G.(Autonomous)College

Jaipur,Rajasthan,India

S.A.Gangal

DepartmentofElectronicScience

SavitribaiPhule

PuneUniversity

Pune,Maharashtra,India

ChandraPrakashGupta

DepartmentofElectronics&

CommunicationEngineering

ManipalUniversityJaipur

Jaipur,Rajasthan,India

MeenalGupta

UniversitySchoolofBasic&Applied

Sciences

GuruGovindSinghIndraprastha

University

DwarkaSector16C,NewDelhi,India

xiv

AbhilashaJain

DepartmentofElectronicsand

CommunicationEngineeringMeerutInstituteofEngineeringand

Technology

Meerut,UP,India

AbhinandanJain

DepartmentofElectronicsand

CommunicationEngineering

SwamiKeshvanandInstituteof

Technology

ManagementandGramothan

Jaipur,India

PraveenK.Jain

DepartmentofElectronicsand

CommunicationEngineering

SwamiKeshvanandInstituteof

Technology

ManagementandGramothan

Jaipur,India

M.S.SriJanani

PGDepartmentofMicrobiology

TheAmericanCollege

Madurai,TamilNadu,India

Md.NoushadJaved

QualityAssuranceLabDepartmentofPharmaceuticsSchoolofPharmaceuticalEducation

andResearch

JamiaHamdardUniversity

NewDelhi,India

AditeeJoshi

DepartmentofElectronicScience

SavitribaiPhule

PuneUniversity

Pune,Maharashtra,India

Contributors

AnkurKumar

DepartmentofElectronicsand

CommunicationEngineeringMeerutInstituteofEngineeringand

Technology

Meerut,UP,India

RiteshKumar

UniversitySchoolofBasic&Applied

Sciences

GuruGovindSinghIndraprastha

University

DwarkaSector16C,NewDelhi,India

SujeetKumar

DepartmentofElectricaland

ElectronicsEngineeringJain(Deemed-to-be-University)Bengaluru,Karnataka,India

LalitKumarLata

DepartmentofElectronicsand

CommunicationEngineeringSwamiKeshvanandInstituteof

Technology

ManagementandGramothan

Jaipur,India

NehaMathur

DepartmentofElectronics&

CommunicationEngineering

ManipalUniversityJaipur

Jaipur,Rajasthan,India

KomalMehta

CivilEngineeringDepartmentDr.KiranandPallaviPatelGlobal

University

Vadodara,Gujarat,India

Contributors

R.K.Nagaria

DepartmentofElectronicsand

CommunicationEngineeringMotilalNehruNationalInstituteof

TechnologyAllahabad

Prayagraj,UP,India

G.BoopathiRaja

VelalarCollegeofEngineeringand

Technology

Erode,TamilNadu,India

ManishaRastogi

DepartmentofBiomedicalEngineeringSchoolofBiologicalEngineeringand

Sciences

ShobhitInstituteofEngineeringandTechnology(DeemedtobeUniversity)

Meerut,UP,India

DeepikaSharma

DepartmentofElectronics&

CommunicationEngineering

ManipalUniversityJaipur

Jaipur,Rajasthan,India

ShivaSharma

DepartmentofBiomedicalEngineeringSchoolofBiologicalEngineeringand

Sciences

ShobhitInstituteofEngineeringandTechnology(DeemedtobeUniversity)

Meerut,UP,India

AmitKumarSingh

DepartmentofElectronics&

CommunicationEngineering

ManipalUniversityJaipur

Jaipur,Rajasthan,India

xv

NehaSingh

DepartmentofElectronics&

CommunicationEngineering

ManipalUniversityJaipur

Jaipur,Rajasthan,India

SugandhaSinghal

UniversitySchoolofBasic&Applied

Sciences

GuruGovindSinghIndraprastha

University

DwarkaSector16C,NewDelhi,India

KunalSinha

DepartmentofElectronics

AsutoshCollege

UniversityofCalcutta

Kolkata,WestBengal,India

DimpySood

CollegeofTechnologyand

Engineering

Udaipur,Rajasthan,India

AnanthakumarSoosaimanickam

CrystalGrowthCentre

AnnaUniversity

Chennai,TamilNadu,India

InstituteofMaterialsScience

UniversityofValencia

Spain

MoorthyBabuSridharan

CrystalGrowthCentre

AnnaUniversity

Chennai,TamilNadu,India

SaravananKrishnaSundaram

DepartmentofPhysics

AnnaUniversity

Chennai,TamilNadu,India

xvi

J.ImmanuelSuresh

PGDepartmentofMicrobiology

TheAmericanCollege

Madurai,TamilNadu,India

RiteshTirole

DepartmentofElectricalEngineeringSirPadampatSinghaniaUniversityUdaipur,Rajasthan,India

Contributors

VikrantVarshney

DepartmentofElectronicsand

CommunicationEngineeringMeerutInstituteofEngineeringand

Technology

Meerut,UP,India

xvii

Editors

DrShilpiBirlaisworkingasanAssociateProfessorintheElectronics&CommunicationDepartmentatManipalUniversityJaipur.Shehasteachingandindustrialexperienceofmorethan15years.ShedidherPh.D.inlow-powerVLSIdesign.Herresearchinterestsarelow-powerVLSIdesign,memorycircuits,digitalVLSIcircuits,nanodevicesandimageprocessing.Shehasauthoredmorethan60researchpapersinjournalsofreputeandinternationalconferences.ShehasorganizedseveralworkshopsinHSPICE,TCADandXILINX,summerinternshipsindiodefabricationandFacultyDevelopmentPrograms.Shehasworkedasasessionchair,conferencesteeringcommitteemember,editorialboardmember,andreviewerininternational/nationalIEEEJournalandconferences.ShehasguidedmanyM.TechStudentsandguidingPh.D.students.SheisaseniormemberofIEEE.

DrNehaSinghiscurrentlyworkingasAssistantProfessorintheDepartmentofElectronics&CommunicationEngineering,SchoolofElectrical,Electronics&CommunicationEngineeringatManipalUniversityJaipur,Rajasthan,India.Shehasmorethan17yearsofexperienceinacademics.Herareasofresearchinterestincludeimageprocessing,machinelearning,VLSIdesignandnanodevices.Shehasseveralpapersandbookchapterspublishedinjournalsandconferencesofrepute.Shehasservedasreviewerinvariousinternationalandpeer-reviewedjournalsandconferences.ShehasalsoworkedasConvener,SessionChairandorganizerofvariousinternationalconferences,summerinternshipsinDiodeFabricationandFacultyDevelopmentPrograms.ShehasguidedseveralM.TechDissertationsandB.Techprojects.

DrNeerajKumarShuklaiscurrentlyworkingasanAssociateProfessorintheDepartmentofElectricalEngineeringatKingKhalidUniversity,Abha,KingdomofSaudiArabia.Hehasacademic,research,andindustryexperienceofmorethan20years.HedidhisPh.D.inLowPowerVLSIDesign.Hehasauthoredmorethan110researchpublicationsinjournalsofreputeandinternationalconferences.Apartfromthis,hehas2patentsand1Ph.D.completedunderhim.Heguided20M.TechDissertations,50B.TechProjectsandconducted50short-termskillsdevelopmenttrainingprogramsanddelivered30expertlectures.Heisreviewerinseveralinternationalconferencesandjournals.Hisresearchareasarelow-powerVLSIdesign,digitaldesignandmachinelearning.

DOI:

10.1201/9781003220350-1

1

1

AnOverviewofCurrent

TrendsinHafnium

Oxide–BasedResistive

MemoryDevices

LalitKumarLata,PraveenKumarJain,andAbhinandanJain

DepartmentofElectronics&CommunicationEngineering,SwamiKeshvanandInstituteofTechnology,Management&Gramothan,Jaipur,India

DeepakBhatia

DepartmentofElectronics&CommunicationEngineering,RajasthanTechnicalUniversity,Kota,India

1.1INTRODUCTION

Memoryisacorecomponentofanycomputingdevicebecauseitstoresdataandprograms.ThemainmemoryofthecomputingdevicedirectlycommunicateswiththeCPU.Itholdstheprogramanddatacurrentlyrequiredbytheprocessorofthecomputer.Memorydevicesusedforstorageandbackuparecalledaux-iliarymemory,andtheycontainlargefilesanddata.Magneticdisksandtapesareexamplesofauxiliarymemory.Auxiliarymemorystoresalltheotherin-formation,andthisinformationistransferredtothecomputer’smainmemorywhenneeded.Mainmemoryisthecentralstageinacomputersystem,anditstoresdataandprogramsduringtheoperationofacomputer.Theprincipaloperationusedinmainmemoryisasemiconductorintegratedcircuit.RAMisanexampleofmainmemory.

RAMwasinitiallyusedforrandomaccessmemorybutisnowusedtodes-ignateread/writememory.Itmaybevolatileornonvolatile.Involatilememory,allthedataaredestroyedwhenthepowersupplyisremoved,whereasinnon-volatilememory,thereisnolossofdata,evenifthepowersupplyisswitchedoff.RAMhastwotypes:SRAM(staticRAM)andDRAM(dynamicRAM).Thesememorydeviceshavetheirbenefitsanddrawbacks.Forexample,thecapacityanddensityofDRAMarehigh,butthismemoryisvolatile,andpowercon-sumptionishighbecauseitneedstoberefreshedeverysecond.SRAMisfastbutvolatile,andlargememorycellsreduceitscapacity.ComparedtoRAM,flash

2Nanotechnology

memoryisincrediblywell-liked,featuresaveryhighcapacity,andisnon-volatile;however,itisrelativelyslow.Sincenoexistingmemorymeetsallcri-teria,developmentisneededtocontinuouslysearchfornewtechnologies.Theperfectmemoryshouldhavehighcapability,provideaspeedyresponse,havelongretentiontime,uselowpowerconsumption,benonvolatileandhavehigherscalingthanexistingtechnology[

1

–

5

].

RRAMhasseveralbenefitsoverothernonvolatilememories,i.e.simplefabri-cation,wonderfulscalability,structuralsimplicity,highdensityofintegration,rapidswitchoverandbettercompatibilitywithcomplementarymetal-oxidesemi-conductor(CMOS)technology[

6

–

24

].

Tables1.1

and

1.2

demonstratehowRRAMcomparestotheothermemorydevicesonthemarket.

1.1.1BASICWORKINGPRINCIPLEOFRRAM

Figure1.1

depictsthebasicstructureofaresistivememorycell.

AsetvoltageshouldbeusedtomovethememorycellofanRRAMdevicefromHRS(highresistancestate)toLRS(lowresistancestate).HRSisrepresentedbyLogic0(OFFstate),andLRSisrepresentedbylogic1(ONstate).Themechanismbywhich

TABLE1.1

ComparisonofVariousMemory

Devices[

25

]

Function

RRAM

WorkingMemory

SRAM

DRAM

Non-Volatility

Yes

No

No

ProgramVoltage

Low

Low

Low

ReadingTime(ns)

20

8

50

Writing/ErasingTime(ns)

0.3–30

1–8

8–50

Multi-BitStorage

Yes

No

No

Endurance

∞

∞

10^12

TABLE1.2

ComparisonofVarious

RecentNonvolatile

Memory

Devices[

26

]

Function

RRAM

FRAM

PCRAM

MRAM

Nonvolatile

Yes

Yes

Yes

Yes

WriteTime(ns)

<5

20

50

<100

ReadTime(ns)

<10

20

<60

<20

EraseTime(ns)

<5

20

120

<100

Endurance

1E12

1E14

1E15

>3E16

WriteOperationVoltage(V)

3

0.6

3

1.8

HafniumOxide–BasedMemoryDevices3

FIGURE1.1SchematicofRRAMstructure

FIGURE1.2Graphicrepresentationcurrent-voltagecurvesfortheunipolarmodeofoperation.

resistiveactionisknownaselectroforming.Fortheformingprocessofafreshsample,avoltagegreaterthanthesetvoltageisnecessary.TheelectricalpolarityofSETandRESETisthefoundationoftwomodesofresistiveswitchingaction[

27

].

TherearetwokindsofoperationsofresistiveswitchingbehaviorbasedontheelectricalpolarityofSETandRESETp