新编-TFT-LCD_工艺制程简介-精品课件

1、2009年04月21日TFT-LCD 工艺制程简介周刚7/24/2022周刚09-4-19编写Contents 2. 1. 3. Array process Module ProcessCell Process TFT LCD 客户导向，团结协作 DeptEvery Process is important 天马显示屏无处不在 精益生产，精益管理 Team workTFT-LCDCOGRecipeOICSTKODFADI TFT-LCD ENGLISH一：Array Process ARRAY生产计划PHOTOWETCVDPVDDRY Organization Array Layout TFT

2、 ARRAY PROCESSCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitora-Si TFTTFT StructureDeposit and pattern gate metalFunctions:Gate of TFTSelect linesBottom electrode of storage capacitorMetal options:T

3、i/Al/TiAl/MoCrMoCCCross-section CCa-Si TFT array process step 1a-Si TFT array process step 2Deposition of SiN/a-Si/n+ by PECVD, patterning of a-SiSiN is gate dielectric and storage capacitor dielectricSelective etch of a-SiSiN is not etchedCCSiNa-Si/n+a-Si TFT array process step 3Deposition and patt

4、erning of source/drain metalFunctions:Source and drain metalData line metalMetal optionsTi/Al/Ti or Ti/AlCrMo or Mo/AlBack etch of n+ a-Si from channel areaCCa-Si TFT array process step 4Deposition and patterning of passivation SiN by PECVDFunction:Passivate TFTCCa-Si TFT array process step 5Deposit

5、ion and patterning of ITOFunction:Pixel electrodeTop electrode of storage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitora-Si TFT TFT ARRAY PROCESS_PVD/CVDUsed for ITO (Indium Tin Oxide tr

6、ansparent conductor) and for metals (Al, Mo, Cr, etc.)DC Sputter depositionSchematic diagram of DC powered sputter deposition equipment(glow discharge)ground-V (DC)VacuumCathode shield-100-1000VPVD原理ACLSLoadlockT/CP/CP/CP/CP/CP/CAKT-5500PECVD (即等离子体增强化学气相沉积) 工作原理:采用等离子辅助对化合物进行催化分解目的: 利用等离子体辅助活化反应气体,

7、降低反应温度,改善薄膜质量PECVD原理LayerFeed gasMaterialTempFunction3 LayerSiH4, N2, NH3A-SiNx320350Gate insulator SiH4, H2a-SiSemiconductorSiH4, PH3, H2n+ a-SiContact layer at source and drain1 LayerSiH4, N2, NH3A-SiNx270290 passivation温度气体流量比 (Si:H,N:H,Si:N)RFPressure Spacing (上下电极间距)影响成膜工艺的主要参数周刚09-4-19编写 M/A E

8、UVMAINT EXT/COL4U/CU/CU/CU/C C/SSCRHP3HP3HP1HP3HP1COL1COL1 M/A DP DEVELOPEREXTPSPSEXT M/A HP2HP2I/FBUFCOL3TITLER/EE EXTEXTHP2COL2EXTPSPSPSPSOUTINOUTINOUT30600mm6000mmHeight:2450mm5585mm TFT ARRAY PROCESS_PHOTOSLIT COATEREXPOSURECANON MPA6000 JUMPstageNozzleSlit Coater & DPDP照明光学系统掩膜板台基板台投影光学系统掩膜板交换装

9、置操作用电脑缓冲装置MPA6000 Exposure unitArrayCFTP & OL MarkOLTP TFT ARRAY PROCESS_WETStripperWet etcher TFT ARRAY PROCESS_DRYCassette stationL/LT/CP/CP/CP/CP/CDET原理利用Plasma将反应气体解离，ion轰击与radicals反应将Film移除，真空下进行RIE：指的是Reactive ion etching，即反应离子刻蚀 目的 蚀刻终点检测。原理利用从蚀刻中开始到结束为止特定的波长的光强度的变化，检测出蚀刻的最合适的终点。plasma13.56 M

10、Hz検出器Optical fiberArray Tester将TFT Array Panel进行测试，如果有短路（SHORT),或是短路(OPEN),就将坐标点记录下来，传给Laser Repair（激光修复机）修复之1.测量元件导通电流,ION2.测量元件截止电流,IOFF3.测量切入(CUT IN)电压VT4.测量电压电流曲线TV CURVE电压V电流I切入電壓IOFFIONTEG7/24/2022TAKE A BREAKQUESTION AND ANSWERCF/Color FilterLCSealantSpacer in SealSeal whit AU BallSpacerPITFT

11、 GlassPolarizerPanel 制 做 完 成 ！周刚09-4-19编写二：Cell ProcessPI前清洗CFTFTPI涂布预烤固烤配向PI LineRubbing LineRubbing后清洗UV照射框胶点胶Seal Oven液晶滴下CFTFTODF Line衬垫料贴合一次切割（自动）二次切割（手动）CleanerPOL AttachCELLCFTFTTrimmerCELL工艺流程Scraper TypeDoctor RollDispenserAPR 版APR: Asahi Photosensitive ResinPI CoaterProcessPI Coater要求特性Rub

12、bingRubbing 动作摩擦轮平台玻璃ProcessSpacer SprayShort DispenserSeal DispenserLC DispenserUV CURE C F上基板 TFT下基板AssemblyProcessODF制成12ProcessScriberZero level detect工作台运动方向及速度切割过程.5.6.ProcessProcessE-C-PLength GrindingWidth GrindingInOutEdge Grind (Skip)ProcessCleanerProcessPOL Attach侧面动作示意正面动作示意POL AttachProcess周刚09-4-19编写三：Module ProcessMODULE工艺流程图ACFFOG UV LINKCOGIC 邦定镜检AOI检测FOGACF 粘贴FOG 邦定镜检电测1封胶胶带粘贴补强UV固化组装副屏电测背光源检测背光源组装主副屏焊接背光源焊接主副屏组装外框组装外框焊接触摸屏组装触摸