IRF540中文数据手册要点

1、IRF540中文数据手册要点IRF540N沟道MOS管特性SYMBOLQUICKREFERENCEDATAVD55=100VI-=23A了7mQThrench工艺低的导通内阻快速开关低热敏电阻综述使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：DC到DC转换器开关电源电视及电脑显示器电源IRF540中提供的是SOT78(TO220AB)常规铅的包裹。IRF540S中提供的是SOT404(DPAK)表面安装的包裹。管脚管脚描述1Gate2Drain3SourceTabDrainHbJ(V:I3HSOT7B(TO220AB)极限值系统绝对最大值依照限制值符号参数条件最小值最大值单位V_DSS漏

2、源极电压Tj=25?Cto175?C-100VV_DGR漏门极电压Tj=25?Cto175?C;-100VV_GS门源极电压RGS=20k?-士20VI_D连续漏电流-23ATmb=25?C;VGS=10V-16AI_DM脉冲漏电流Tmb=100?C;VGS=10V-92AP_D总功耗Tmb=25?C-100WTj,Tsig操作点和存储温度Tmb=25?C-55175C雪崩能量极限值符号参数条件最小值最大值单位Eas1AS非重复性Unclampedinductiveload,IAS=10A;-230mJ雪崩能量最大tp=350s;Tjpriortoavalanche=25?C;VDD25V;R

3、GS23A非重复性雪崩电流=50?;VGS=10V;refertofig:14热敏电阻付号参数条件最小值典型值最大值单位RthjmbRthja1安装底座交界处的热阻周围环境热阻SOT78封装，自由空间SOT404封装，PCB上-60501.5K/WK/WK/W电特性25C除非另有说明符参数条件典单位1|号11小值/、型值大值V(BR)DSSVgS(TO)RDS(ON)gfs1GSS1DSS漏源极朋溃电压门阀电压漏源极Vgs=0V；iD=0.25mATj=-55?CVds=Vgs；ID=1mATj=175?CTj=-55?CVgs=10V；ID=17ATj=175?CVds=25V;Id=17A

4、Vgs=20V;Vds=0Vvds=100V;vgs=0VVDS=80V;VGS=0V;Tj=仃5?C10089218.7S61124677930010!50VVVVV mQmQSnAuAuA导通电阻向前跨导门源极泄漏电流0门极电压漏电流Qg(tot)总ID=17A-65nCQgs共VDD=80V;-10nCQgd门极电荷门VGS=10V29nC源极电荷门漏极电荷Tdon开Vdd=50V；Rd=2.2?;-8-nsTr启Vdd=10V；Rg:=5.6?-39-nsTdoffTf延迟时间开启上沿时间关Resistiveload2624nsns闭延迟时间关闭下沿时间LdLd内部漏Measuredt

5、abtocentreofdieMeasuredfromdrainlead-3.54.5-nHnHLs电感内部漏电感tocentreofdiepackageonly)Measuredfromleadtosourcebondpad(SOT78source7.5nH内部源极电感CiSS输Vgs=0V；Vds=25V;f=1-8901187pFCoSS入MHz-139167pFCrSS电容输出电容反馈电容83109pF反向二极管极限值及特性符号参数条件最小值典型值最大值单位IS1SMVDS连续源极电流If=28A;Vgs=0V-0.9423921.5AAV脉冲源极电流极管正向电压trr反#=17A;V

6、gs=0V;-61-nsQrr向恢复之间反向恢复命令-diF/dt=100A/us;Vr=25V200nCNormalisedPowerDerating,PD(%)Fig.1.Normalisedpowerdissipation.PD%=100PD/PD25V=f(T)底座温度-自然功率降低百分比图1：自然功率损耗0255075100125150175MountingBasetemperature,Tmb(C|Fig.2.Normalisedcontinuousdraincurrent.Q%二100川口站七=（仃趾）；conditions:37。底座温度-漏电流降低百分比图2:自然持续漏电流F

7、ig.3.Safeoperatingarea.Tmb=25CId&IDm=f(VDs)；dsing/P山so:parametertD漏源极电压-脉冲漏极电流峰值nTransientthermalmpedance,Zth卜mbD=0.50.2:图3:安全操作区域；02二Singhktp)=tp/T4fT歸5壬；二?0.02+|f-=丄nIsinglepulseiiiTfiijii1E-061E-051E-04IE-031E-O21E-O11E+00Pulsewidth,tp(s)味宽Fig4Transientthermalimpedance,召卜咖=F;parameterD=t/T脉宽-瞬态热阻

8、抗图4:瞬态热阻抗Fig5TypicaloutputcharacteristiGS,T-25CId=f(VDS)漏源极电压-漏极电流图5:典型输出特性Drein-SOLrceOnResistance,RDS(on)(Ohms)Fig.6.Typicalon-stateresistance,7=25CDS(ON)=FQd)漏极电流-漏源极导通阻抗图6:典型导通阻抗Fig.ZTypicaltransfercharacteristics-Id=f(Vss)图7:典型传递特性图&典型跨导NormalisedOnstateResistanceFig.9.Normaliseddrain-sourceon-

9、stateresistance.DS(O/DS(ON)25C亿丿图9:漏源极导通阻抗ThresholdV口Itaga,VGS(TO)(V)A-nnaxiirl%彩-ff一j17num-J.3q-一,(VDical_Lrr*、厶寸7-1mininAnum计斗-0j-12J*1A-U.30-60-40*2002040E080100120140160180JunctionTomporaturo,Tj(C|Fig.10.Gatethresholdvoltage.gs(to)=conditions:iD=1mA;VDS=VGS图10:门阀电压Fig.11.Sub-thresholddraincurrent.Id=fWconditions:7；=25C:VD3=%图11:阈漏极电流Capacitancae.Oise,Coes,Cre宫(pF)Fig.12,Typicalcapacitances,C*C=f(VDS);conditions:VGS=OV;f=1MHz图12:典型电容值Sdurte-DrainVoltage,VSDS(V)Fig.13.TypicalreversediodecurrentlF=f(VSDS);conditions:论込=0V;parameterTVfis=QV7厂1/i175(r/r丄Ti=?5f/Jjr/F/17*-J/11210