Engineer硅晶园片上TiAuCr层厚度的测量

1、January 12, 2001Mr. Jesse Huang,9999 Hamilton BlvdBreinigsville, PA 18031Dear Mr. Huang:We have analyzed the two wafers that you submitted late last month. The analysis was fairly routine, and our QuanX EDXRF system easily achieved the required precision. The report below details how the data were a

2、cquired and analyzed. Layer thickness at nine points on each wafer and precision measurements are also reported.I hope you will find these results helpful and indicative of the ability of the QuanX system to meet your needs and exceed your expectations. If I may be of additional assistance, please c

3、ontact me directly in the Redwood City office at 650.562.2538.Sincerely,Anton Kleyn,Applications Engineer硅晶园片上Ti/Au/Cr层厚度的测量Thermo NORAN 简介: Thermo NORAN荧光能谱仪试验室分析了两个硅晶圆片上镀层的厚度， 一个是Si上的Ti, 另外一个是 Si上的 Ti/Au/Cr. 分析方法是基本参数薄膜分析方法.仪器: QuanX PCD 系统, 美国热电集团.样品制备: 不需要样品制备，直接分析。要注意样品放置时的方向和角度 采谱条件：电压(kV)电流(m

4、A)滤光片样品室气氛分析元素17自动Aluminum空气Cr, Ti27*自动Pd thick空气Au此条件仅用于晶片Cr/Au/Ti 谱处理: 用拟合法XML提取净峰强度 。 分析技术: 使用半无标样基本参数法（FP） · 基体校正 · 使用与样品成分不同的标样 · 使用纯元素为标样直接对未知样品进行分析 这种方法对那些找不到相应标样的用户是特别有用的。 分析结果晶圆片分析按照右图所示选择 10 点进行分析. 图1和2 是 Cr/Au/Ti 和 Ti 结果.晶圆片上的测试点 测量精密度：Table 1Ti / Au / Cr / SiTi / SiTiCrAuT

5、iAcquire Time100 s200 sMeas. 1440.4141.4317.0664.02441.1140.3316.9668.93445.1141.3314.9665.84443.3141.3316.9667.85444.9141.0314.5668.76442.0141.9318.8670.07442.4141.2316.6669.88441.3140.6318.4670.79442.7140.5316.7669.810444.0140.6316.0668.911440.7141.9319.2669.312444.7141.9313.6668.013442.9141.2314.8670.414442.0141.2315.9669.815445.6141.6315.4668.216441.8141.4315.7668.917443.1140.3316.9669.818441.8142.1314.1669.619440.9140.2316.8670.020440.9141.9317.0668.9平均值 (A)442.6141.2316.3668.9标准偏差.1.590.601.501.59RSD (%)0.360.430.470.24测得的精密度超过了要求至少两倍。若精密度要求不需要这