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1、2021-10-16前工艺部分设备简介前工艺部分设备简介Reporter: 刘伯伟刘伯伟Date: 24/3/200912021-10-16内容简介内容简介一、一、ICPICP感应耦合等离子刻蚀设备简介感应耦合等离子刻蚀设备简介二、二、E-beamE-beam电子束蒸发台设备简介电子束蒸发台设备简介 ITOITO制程制程 Bonding PN-pad Bonding PN-pad制程制程三、三、PECVDPECVD等离子化学气相沉积设备等离子化学气相沉积设备22021-10-1632021-10-164Load-Lock Valve2021-10-1652021-10-1662021-10-1

2、672021-10-1682021-10-1692021-10-16102021-10-16112021-10-16122021-10-1613High Density Plasma means very fast etch ratesIon EnhancedGaN etching requires:Ion bombardment + chlorine based chemistryAnisotropic Ion Enhanced EtchingnPhysical and chemical components individually slowNeed both ions and react

3、ive species presentnIons striking surface enhance reactions and product desorptionnAllows “fast” anisotropic etchingProductIonNeutral2021-10-16142021-10-16152021-10-16162021-10-1617Experimental conditions:2021-10-16182021-10-16192021-10-16202021-10-16212021-10-16电子束蒸发台设备简介电子束蒸发台设备简介工作原理:工作原理:电子束蒸镀法是

4、利用电子枪所射出的电子束轰击待镀材料,将高能电子电子束蒸镀法是利用电子枪所射出的电子束轰击待镀材料,将高能电子射束的动能转化为熔化待镀材料的热能,使其局部熔化。因在高真空下射束的动能转化为熔化待镀材料的热能,使其局部熔化。因在高真空下( 4 41010-6-6 t torrorr)金属源的熔点与沸点接近,容易使其蒸发,而产生的金属源的熔点与沸点接近,容易使其蒸发,而产生的金属蒸气流遇到晶片时即沉积在上面。金属蒸气流遇到晶片时即沉积在上面。理论基础理论基础饱和蒸气压:在一定温度、压力下,设纯液体与其蒸气平衡共存,即两相饱和蒸气压:在一定温度、压力下,设纯液体与其蒸气平衡共存,即两相的量长时间保持

5、不变,通常称此时平衡蒸气的压力为该液体在此温度下的的量长时间保持不变,通常称此时平衡蒸气的压力为该液体在此温度下的饱和蒸气压。饱和蒸气压。沸腾:当液体饱和蒸气压与外压相等时,液体不仅可以从表面气化,它的沸腾:当液体饱和蒸气压与外压相等时,液体不仅可以从表面气化,它的内部也可气化形成气泡而不断冒出,这种现象叫做沸腾。沸腾时的温度,内部也可气化形成气泡而不断冒出,这种现象叫做沸腾。沸腾时的温度,即液体的蒸气压等于外压时的温度叫做沸点。即液体的蒸气压等于外压时的温度叫做沸点。同一液体在不同外压下,有不同的沸点。如增大外压,则其蒸气压等于外同一液体在不同外压下,有不同的沸点。如增大外压,则其蒸气压等于

6、外压所须的温度(即沸点)必升高;如降低外压,则沸点降低。压所须的温度(即沸点)必升高;如降低外压,则沸点降低。222021-10-16真空镀膜原理示意图真空镀膜原理示意图232021-10-1624镀膜参数设定和系统值设定镀膜参数设定和系统值设定2021-10-1625自动镀膜操作自动镀膜操作机台名称机台名称蒸镀金属蒸镀金属加热方式加热方式E-Beam( (氧化物)氧化物)SiO2、ITOE-GunE-BeamAu、Ni、Ti、AgCr、AL、PtE-Gun2021-10-1626机台功用及蒸镀金属一览表机台功用及蒸镀金属一览表2021-10-16272021-10-16ABCA:1100A

7、B:400A C:800A不同厚度不同厚度ITOITO试验穿透率一试验穿透率一282021-10-16A:ITO厚度2500AB:ITO厚度5000AC:ITO厚度7500AD:ITO厚度10000AE: ITO厚度12500ADCBEA不同厚度不同厚度ITOITO试验穿透率二试验穿透率二292021-10-16302021-10-16Lift-off ProcessR680E-GunRevolution domeShutterCr/Pt/AuPR31Key Feature of lift-off process technology.Key Feature of lift-off proce

8、ss technology.1.Angle of incident of evaporation material is vertical toward substrate.1.Angle of incident of evaporation material is vertical toward substrate.2.Temperature of deposition can be kept below 2.Temperature of deposition can be kept below allowable temperature for photo-resist. allowabl

9、e temperature for photo-resist.Patented Plasma Box ComponentsCameraPlasma BoxRF FeedthroughProcess GasesHeaterVacuumUnique patented design:Independently pumped, heated vacuum chamber within separate vacuum vesselDual independent pumping systems prevents contamination of the deposited layers2021-10-1

10、632Identifying Deposition Process GoalsnHigh Breakdown StrengthnStress nPin Hole Free SurfacesnStep CoveragenDamagenUniform ThicknessnUniform IndexnDeposition Rates nRobust ProcessReproducibilityLow particulatesMinimal clean cyclesnThroughputMatching processes, goals, and systems is necessary2021-10

11、-1633Gas injectionRF injectionProcess pumpingWaferHIGH PRESSURE PLASMAVacuum pumpingHOTCOLDOugassingImpuritiesLOW PRESSURE VACUUMPLASMA BOX DESIGN IS UNIQUE TO MAINTAIN HIGH PURITY OF DEPOSITION and excellent repeatabilityPECVD Deposition:Plasma Box ConceptPressure of Plasma remains higher (x100) th

12、an Vacuum ChamberPlasma box reactor in aluminum based material and HOT2021-10-1634TMPRP1RP2Process GasesRF PowerLaser EPDPlasma Box TechnologynPlasma confined in a uniformly heated reactorExcellent thickness and refractive index uniformityGood control of the particle contamination2021-10-1635Plasma

13、Box Unique OperationP1 P2TMPP1P2Process GasesRotary PumpDeposition ModeP1 P2 prevents out-gassing from cold chamber wallsResult: Ultra pure films without using a load-lockCleaning ModeP1 P2 keeps F atoms inside Plasma BoxResult: No corrosion to hot reactor parts2021-10-1636Low Temperature PECVD Depo

14、sitionnLow temperature passivation SiO2 or SiNx when required due to device limitationse.g. Magnetic materialsnDeposition at 100300Ce.g. On resist for tri-level processes2021-10-1637物理气相生长模式化学气相生长模式化学气相生长模式PEPECVDCVD淀积示意图淀积示意图baa/b = 60%Step Coverage of Low Temperature Deposited 1800A thick2021-10-1

15、639Thickness: average value and uniformity wafer to wafer0100200300400500123456789 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25Thickness (nm)012345Uniformity (%)ETCH CLEAN IS PERFORMED IN BETWEEN EACH DEPOSITIONCHAMBER CONDITION REMAINS IDENTICAL FROM WAFER TO WAFERPLASMA BOX DATA, PLASMA BOX DAT

16、A, High Repeatability2021-10-1640ETCH CLEAN IS PERFORMED IN BETWEEN EACH DEPOSITIONCHAMBER CONDITION REMAINS IDENTICAL FROM WAFER TO WAFERPLASMA BOX DATA, PLASMA BOXrefractive index of SiO21.401.421.441.461.481.50020406080100120run numbern4003002001000-100-200-300-4000102030405060708090Stress (MPa)2

17、0W50W100WCompressiveTensile%N2 in N2/(N2 +He)Low, adjustable stress Stress Control - He Addition and Power Effects2021-10-1641012345678910050100150200250300350400Deposition Temperature (C)Breakdown Field (MV/cm)1000 Thick FilmsElectric Field Breakdown:1 x 10-6 A for 0.5 mm2 capacitorHigh breakdown voltagesBreakdown Field vs. Deposition Temperature2021-10-1642Stress vs

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