12英寸晶圆55nm工艺后段介绍

1、Huali 55nm LP BEOL flow introduction Confidential2 Outline Overview HL 55/65nm BEOL Integration Schemes HL 55LP BEOL Process Flow Introduction M1 (Single Damascene, MHM Process) Mx/Vx-1 (1X, Dual Damascene, Partial trench first MHM process) T4Vx/T4Mx (4X, Dual Damascene, Full via first BARC etch bac

2、k process) RV/APL/CB (Metal etch process) Confidential3 Overview Back-end-of-line (BEOL) process form the metal wires interconnecting with the various semiconductor device created by FEOL process BEOL metal interconnect delay dominate IC speed performance (RC delay) with IC scaling Cu interconnect i

3、nstead of AL to reduce metal resist (R) beyond 0.13um node Introduce into Low-K dielectric to decrease capacitance (C) beyond 90nm node BEOL Cu interconnect integration scheme Singe Damascene (SD) Dual Damascene (DD) Confidential4 Why Cu Good adhesion; Minimal Seed over-hang Bottom coverage Sidewall

4、 coverage Over-hang Confidential 16 M1 Cu Plating Requirement: Good ECP gap-fill (Void free) Confidential 17 M1 Cu CMP Low-K loss Process Control Thickness control for metal Rs Dishing/Erosion control Defect Issues Cu void induced by Cu gap-fill capability Cu residues Cu corrosion Scratch; etc. Conf

5、idential18 Dual Damascene Mx/Vx-1 (ITM/ITV) (1X DD, Mx-1Mx/Vx-1) Confidential 19 Mx Film Dep Mx-1 Confidential 20 Mx Photo Mx-1 Confidential 21 Mx MHM Etch Mx-1 M1 HM Etch: 1. TiN open 2. In-situ PR Plasma Dry Strip (Removing remaining PR and BARC) Confidential 22 Mx MHM Etch Mx-1 TEOS loss M1 HM Et

6、ch: 1. TiN open 2. In-situ PR Plasma Dry Strip (Removing remaining PR and BARC) Confidential 23 Vx-1 Photo Mx-1 Confidential 24 Vx-1Mx Etch Mx-1 Vx-1Mx AIO Etch: 1. Partial Via Etch Via Depth and Loading control 2. Via PR Plasma Dry Strip (Removing remaining PR and BARC) 3. Trench Etch Confidential

7、25 Vx-1Mx Etch Mx-1 Vx-1Mx AIO Etch: 1. Partial Via Etch Via Depth and Loading control 2. Via PR Plasma Dry Strip (Removing remaining PR and BARC) 3. Trench Etch Confidential 26 Vx-1Mx Etch Mx-1 Vx-1 Mx Vx-1Mx AIO Etch: 1. Partial Via Etch Via Depth and Loading control 2. Via PR Plasma Dry Strip (Re

8、moving remaining PR and BARC) 3. Trench Etch Confidential 27 Mx Barrier Good adhesion; Minimal Seed over-hang Confidential Requirement: Good ECP gap-fill (Void free) 28 Mx Cu Plating Mx-1 Vx-1 Mx Confidential 29 Mx Cu CMP Mx-1 Vx-1 Mx Process Control Thickness control for metal Rs Dishing/Erosion co

9、ntrol Defect Issues Cu void induced by Cu gap-fill capability Cu residues Cu corrosion Scratch; etc. Low-K loss Confidential30 Dual Damascene T4Vx/T4Mx (4X DD, ITM or T2M1 T4Vx/T4Mx or T4M1T4V2/T4M2) Confidential 31 T4Mx Film Dep T4Vx T4Mx Confidential 32 T4Vx Photo T4Vx T4Mx Confidential 33 T4Vx Et

10、ch T4Vx T4Mx T4Vx Etch: 1. Via Etch Stop at SiCN liner Confidential 34 T4Vx Etch T4Vx T4Mx T4Vx Etch: 1. Via Etch Stop at SiCN via stop layer 2. In-situ plasma dry strip Remove remaining PR Confidential 35 T4Mx BARC Coating T4Vx T4Mx Confidential 36 T4Mx BARC Etch Back T4Vx T4Mx Confidential 37 T4Mx

11、 Photo T4Vx T4Mx Confidential 38 T4Mx Etch T4Vx T4Mx T4Mx Etch: 1. Trench Etch Stop at SiN trench stop layer 2. In-situ plasma dry strip Remove remaining PR and BARC 3. LRM (Via bottom SiCN open) Confidential 39 T4Mx Etch T4Vx T4Mx T4Mx Etch: 1. Trench Etch Stop at SiN trench stop layer 2. In-situ p

12、lasma dry strip Remove remaining PR and BARC 3. LRM (Via bottom SiCN open) Confidential 40 T4Mx Etch T4Vx T4Mx T4Mx Etch: 1. Trench Etch Stop at SiN trench stop layer 2. In-situ plasma dry strip Remove remaining PR and BARC 3. LRM (Via bottom SiCN open) Trench bottom PEOX recess Confidential 41 T4Mx

13、 Barrier & Seed Dep T4Vx T4Mx Confidential 42 T4Mx Cu Plating T4Vx T4Mx Confidential 43 T4Mx Cu CMP T4Vx T4Mx Confidential44 RV/APL/CB Passivation (T2M1 or T4M2RV/APL/CB) Bonding Pad for chip-to-package connections Protecting the IC chip RV (Redistribution Via) APL(Alumina Pad Layer) CB (Chip Barrie

14、r) Confidential 45 RV Film Dep T4M2 Confidential 46 RV Photo T4M2 Confidential 47 RV Etch T4M2 RV Etch: 1. RV Oxide Etch Stop at SIN trench stop layer 2. In-situ plasma dry strip Remove remaining PR 3. LRM (Bottom SIN open) Confidential 48 RV Etch RV Etch: 1. RV Oxide Etch Stop at SIN trench stop la

15、yer 2. In-situ plasma dry strip Remove remaining PR 3. LRM (Bottom SIN open) T4M2 Confidential 49 RV Etch RV Etch: 1. RV Oxide Etch Stop at SIN trench stop layer 2. In-situ plasma dry strip Remove remaining PR 3. LRM (Bottom SIN open) T4M2 Confidential 50 APL Liner/AL Deposition T4M2 Confidential 51

16、 APL Photo T4M2 Confidential 52 APL Etch RV Etch: 1. AlPad Etch 2. In-situ plasma dry strip Remove remaining PR T4M2 Confidential 53 CB Film Dep T4M2 Confidential 54 CB Photo T4M2 Confidential 55 CB Etch T4M2 Confidential 56 CB Etch Confidential57 谢谢您的时间！谢谢您的时间！ Thanks for your attention! Confidential58 Dual damascene structure formation Mainly four methods: Full Via first(FVF), P