GB/T 44334-2024埋层硅外延片

ICS

29.045

CCS

H82

中华人民共和国国家标准

GB/T44334—2024

埋层硅外延片

Siliconepitaxialwaferswithburiedlayers

2024-08-23发布2025-03-01实施

国家市场监督管理总局发布

国家标准化管理委员会

GB/T44334—2024

目次

前言

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Ⅲ

1

范围

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1

2

规范性引用文件

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1

3

术语和定义

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1

4

产品分类

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2

5

技术要求

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2

5.1

衬底材料

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2

5.2

外延层

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2

5.3

几何参数

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5.4

表面金属

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4

5.5

表面质量

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4

5.6

边缘

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5

5.7

其他

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6

试验方法

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7

检验规则

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6

7.1

检查与验收

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6

7.2

组批

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6

7.3

检验项目

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6

7.4

取样

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7.5

检验结果的判定

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8

标志、包装、运输、贮存和随行文件

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7

8.1

标志和包装

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8.2

运输和贮存

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8.3

随行文件

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9

订货单内容

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8

Ⅰ

GB/T44334—2024

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规

定起草。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由全国半导体设备和材料标准化技术委员会（SAC/TC203）与全国半导体设备和材料标准

化技术委员会材料分技术委员会（SAC/TC203/SC2）共同提出并归口。

本文件起草单位：南京国盛电子有限公司、西安龙威半导体有限公司、上海晶盟硅材料有限公司、

浙江金瑞泓科技股份有限公司、中环领先半导体材料有限公司、浙江丽水中欣晶圆半导体科技有限公

司、南京盛鑫半导体材料有限公司、有色金属技术经济研究院有限责任公司、河北普兴电子科技股份有

限公司、盖泽华矽半导体科技（上海）有限公司、赛晶亚太半导体科技（浙江）有限公司。

本文件主要起草人：仇光寅、王银海、谢进、骆红、贺东江、马林宝、顾广安、李慎重、李春阳、

徐西昌、徐新华、袁夫通、刘小青、米姣、周益初、张强。

Ⅲ

GB/T44334—2024

埋层硅外延片

1范围

本文件规定了埋层硅外延片的产品分类、技术要求、试验方法、检验规则及标志、包装、运输、贮

存、随行文件和订货单内容。

本文件适用于具有埋层结构的硅外延片的生产制造、测试分析和质量评价，产品主要用于制作集成

电路芯片和半导体分立器件。

2规范性引用文件

下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。其中，注日期的引用文

件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用

于本文件。

GB/T1550非本征半导体材料导电类型测试方法

GB/T2828.1—2012计数抽样检验程序第1部分：按接收质量限（AQL）检索的逐批检验抽样

计划

GB/T6617硅片电阻率测定扩展电阻探针法

GB/T6624硅抛光片表面质量目测检验方法

GB/T12964硅单晶抛光片

GB/T13389掺硼掺磷掺砷硅单晶电阻率与掺杂剂浓度换算规程

GB/T14139硅外延片

GB/T14141硅外延层、扩散层和离子注入层薄层电阻的测定直排四探针法

GB/T14142硅外延层晶体完整性检验方法腐蚀法

GB/T14146硅外延层载流子浓度的测试电容﹘电压法

GB/T14264半导体材料术语

GB/T14847重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法

GB/T19921硅抛光片表面颗粒测试方法

GB/T24578硅片表面金属沾污的全反射X光荧光光谱测试方法

GB/T29507硅片平整度、厚度及总厚度变化测试自动非接触扫描法

GB/T32280硅片翘曲度和弯曲度的测试自动非接触扫描法

GB/T35310200mm硅外延片

GB/T39145硅片表面金属元素含量的测定电感耦合等离子体质谱法