光通信用半导体激光器从外延到芯片

AIXTRONCCS6X2MOCVDMOCVDGasProcessMO&HydrideTMGaTMInTMAlAsH3PH3Si2H6Massflow&pressEpi-MOCVDofLitecoreequippedTMGa、TMIn、TMAl、DEZn、AsH3、PH3andSi2H6GasBoundaryTransportofthereagentsinthegasphasetothesubstrate,e.g.bymeansofacarrierDiffusionofthemoleculesthroughthephaseinterfacegas/boundaryAdsorptiononthesubstrateMigrationofthemoleculestocrystallizationChemicalDesorptionoftheby-productsanddiffusionandconvectionoutfromtheboundaryTransportoftheby-productsoutfromtheHighpreciselyPCcontrolMassflow&presscontrol\Temperaturebalance\On-site

Whenasemiconductorisexcitedbyphotonsofenergyabovethebandgap,electron-holepairscreateinthematerial.Afteratimethesebine,emittingphotonsofthesamewavelength(fordirectbandgapmaterialsonly)andofhigherwavelengths(whensomeenergyisdissipatedasphotons).TestEquipment-

diffracteddX-RayDiffraction(XRD)onthin ysisofcrystals.X-Raysproducedwhenelectricallychargedparticles(e.g.,electrons)ofsufficientkineticenergyaresuddenly

TomeasurecarrierconcentrationbyCVmethods,conditionsmustbesuchthataregiondepletedofcarriersisformed.Forap-typesemiconductor,wherethemajoritycarriersareholes,thisconditionissatisfiedbypositiveionsinsolution,asintheFigure.TestEquipment-Whenanelectronmovesalongadirectionperpendiculartoanappliedmagneticfield,itexperiencesaactingnormaltobothdirectionsandmovesinresponsetothis andthe effectedbytheinternalelectricfield.Holographicgratingisatypeofdiffractiongratingformedbyaninterference-fringefieldoftwolaserbeamswhosestanding-wavepatternisexposedtoapolishedsubstratecoatedwithphotoresist.Processingoftheexposedmediumresultsinapatternofstraightlineswithasinusoidalcrosssection. InP

Optical的应用在实际产品生产中，折射率耦合均匀光栅具有相对简便、成

ReflectivityReflectivity080090010001100120013001400ARAl2O3/SiReflectivityReflectivity080090010001100120013001400LITECLITEC作作配 25℃

项目合作单位 邮电大学

备

术 （b）封装蝶形器件（c）线 在、光纤格光栅耦合、