认识Mask以及其制作流程

认识Mask以及其制作流程演示文稿当前1页，总共25页。优选认识Mask以及其制作流程当前2页，总共25页。TheRoleofMaskinICIndustry

DESIGNMASKWAFERTESTINGASSEMBLY当前3页，总共25页。HowDoesMaskWorkinWaferFAB

-------Stepper当前4页，总共25页。HowDoesMaskWorkinWaferFAB

-------Scanner当前5页，总共25页。RawMaterialofMask

BlankBIM(binarymask)PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSM当前6页，总共25页。SizeofBlank

5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?当前7页，总共25页。BlankComponent

BinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilmPhotoResistOpaqueMetalFilmSubstratePhotoResistOpaqueMetalFilm

PhaseShiftLayer

Substrate当前8页，总共25页。BlankQzCharacteristic

RigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficient9.43.70.5当前9页，总共25页。BlankQzCharacteristic

OpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywechooseQuartzasthesubstrateofblank当前10页，总共25页。HowtoTransferDesigntoMask?

WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtch当前11页，总共25页。Front-endProcess

BlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step7当前12页，总共25页。Front-endProcess

DryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure

(EB1,EB2,EB3

DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment

(SFD2500,ASP5500)H+DryEtch(Gen3,Gen4)

AEI,Re-etchStrip,ASI当前13页，总共25页。PellicleComponent

PellicleMembraneMaterialWaveLengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)Frame(AluminumAlloy)AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlass当前14页，总共25页。WhatPellicleDo?

TopContaminantObjectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLight当前15页，总共25页。ParticleImmunityControl

Particlesize(D)V.S.MinimumStand-off(T)T=(4M/N.A.)DM----MagnificationN.A.----NumericalApertureoftheLensForglasssideparticle,T=2.3mmD1T1T2D2当前16页，总共25页。MaskQualityControl

C.D.DefectRegistration当前17页，总共25页。CD(criticaldimension)measurement当前18页，总共25页。DefectTypeOpaquespotParticleProtrusionIntrusionContaminationPinholeMissingARGlassfractureBreakGlassseedBridgeSolventspotHardDefectSoftDefectMissSize当前19页，总共25页。HowtoDoMaskDefectInspect

当前20页，总共25页。MaskLayoutExemplification

Normal

++++FiducialTestKeyTestLineMainPatternScribeLineGlobalMarkQACellBarcodeMulti-Chip

++++FiducialTestKeyTestLineScribeLineGlobalMarkQACell++AChipBChipCChipDChip+当前21页，总共25页。ThePrinciple

ofSTARlightInspectTheModelinSMICMaskShop(SL3UV)canonlydetectpatternsideSTAR:SynchronousTrans.AndReflected当前22页，总共25页。WhatisRegistration

当前23页，总共25页。RegistrationResultExemplification

Mask: 6”,t=0.25” Quart