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1、Page: Overview KLA Basic Operation1Page: 21xx Capabilities2Page: 3Page: Run Overview4Page: Run one waferInspection Queue5Page: 6Page: 7Page: 8Page: 9Page: Stopping the Inspection10Page: Defect Overview To improve production yields, defects need to be monitored and statistically analyzed at each stag

2、e of wafer production.11Page: Defect Sort1.False : Found nothing after review with inspection data.2.Unkown : Defects were found but there is no suitable defect code to assign.3.Fall on particle : Particle on surface of patten. 4.In film particle : Particle was contained in film, such as poly, HDP,

3、metal and so on.HDPPoly12Page: 5.Scratch : Especially for scratch caused by robot , other tool parts or man-made. Defect map :Defect iamge:MicroMacro13Page: 6.Discolor : Color difference7.Masking :Should be etched but still remian(poly,SiN,spacer,metal and so on). Some connect more than two lines,it

4、s bridge(killer).14Page: 8.Ring like defect: Such as defects caused by ARC splash, usually related to PHOTO.PolyMetal9.Grape like defect:Induces by PHOTO PU.15Page: 10.Residue :Always happen after wet station clean.11.Patten abnormal : Roughness,Defocus,Patten shift and so on.RoughnessDefocusPatten

5、shiftPatten Abnormal16Page: 12.Concave: COP( Crystal oriented pits ), Oxide Loss,Pits.13.Peeling : Pattern shift or missing(W plug is one of peeling,always appear at wafer edge.) 17Page: 14.Blind : CT or Via have not been opened.15.Patten damage : Metal damagePoly broken is patten damage too,always

6、happen during High Imp.18Page: 16.W Residue : 1). Caused by Oxide Loss; 2). Caused by CMP.NORMAL ABNORMAL17.Under_Pat :Under layer pattern fail issue.19Page: 18. Salicide_abnormal:Salicide poor formation.19.Grain : Including poly or metal grain.20Page: 20.Slurry: 21.PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon21Page: 22.Arcing:23.Line open:22Page: 24.Corrosion : Caused by etch strip cham

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