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1、1第二章第二章 ULSI工艺总汇工艺总汇 23456789101112TemasekTemasekTemasek Polytechnic Polytechnic PolytechnicCMOSCMOSCMOS13CMOSCMOSCMOSStarting with a silicon waferCross Section of the Silicon WaferMagnifying the Cross Section14CMOSCMOSCMOSn/p-well FormationGrow Thin OxideDeposit NitrideDeposit Resistsilicon substra

2、teUV ExposureDevelop ResistEtch Nitriden-well ImplantRemove Resist15CMOSCMOSCMOSn/p-well Formationsilicon substrateGrow Oxide (n-well)Remove Nitridep-well ImplantRemove OxideTwin-well Drive-inp-welln-wellRemove Drive-In Oxide16silicon substratep-welln-wellCMOSCMOSCMOSLOCOS IsolationGrow Thin OxideDe

3、posit NitrideDeposit ResistUV ExposureDevelop ResistEtch NitrideRemove Resist17CMOSCMOSCMOSLOCOS Isolationsilicon substratep-welln-wellDeposit ResistUV ExposureDevelop ResistField Implant BRemove ResistGrow Field OxideFoxRemove NitrideRemove Oxide18silicon substratep-welln-wellGrow Screen OxideCMOSC

4、MOSCMOSTransistor FabricationVt ImplantDeposit ResistUV ExposureDevelop ResistPunchthrough ImplantRemove ResistRemove OxideFox19silicon substratep-welln-wellGrow Gate OxideCMOSCMOSCMOSTransistor FabricationDeposit PolySiPolySi ImplantpolySipolySiDeposit ResistUV ExposureDevelop ResistEtch PolySiRemo

5、ve ResistFox20silicon substratep-welln-wellCMOSCMOSCMOSTransistor FabricationDeposit Thin OxideDeposit ResistUV ExposureDevelop Resistn-LDD ImplantRemove ResistFoxpolySipolySi21silicon substratep-welln-wellCMOSCMOSCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp-LDD ImplantRemove R

6、esistDeposit Spacer OxideEtch Spacer OxideFoxpolySipolySi22silicon substratep-welln-wellCMOSCMOSCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistn+ S/D Implantn+n+Remove ResistFoxpolySipolySi23silicon substratep-welln-wellCMOSCMOSCMOSTransistor FabricationDeposit ResistUV ExposureDev

7、elop Resistp+ S/D Implantp+p+Remove ResistFoxpolySipolySin+n+24silicon substratep-welln-wellCMOSCMOSCMOSContacts & InterconnectsDeposit BPTEOSBPTEOSBPSG ReflowPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistContact EtchbackRemove ResistFoxpolySipolySin+n+p+p+25silicon substratep-welln-w

8、ellCMOSCMOSCMOSContacts & InterconnectsDepost Metal 1Metal 1Deposit ResistUV ExposureDevelop ResistEtch Metal 1Remove ResistFoxpolySipolySip+p+n+n+BPTEOS26silicon substratep-welln-wellCMOSCMOSCMOSContacts & InterconnectsDeposit IMD 1IMD1Deposit SOGSOGPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistVia EtchRemove ResistFoxpolySipolySip+p+Metal 1n+n+BPTEOS27silicon substratep-welln-wellCMOSCMOSCMOSContacts & InterconnectsDeposit Metal 2Metal 2Metal 2Deposit ResistUV ExposureDevelop ResistEtch Metal 2R

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