wafer工艺流程PPT优秀课件

1、CZ6 Basic flow introduction Page17 Process Feature CZ6H process (1P3M)+option layer (MECAP, R-poly, Code P) 0.45um LV(5V) logic technology CZ6H OTP (one time program) process (1P3M)+option layer (MECAP, R-poly) 0.45um LV(5V) logic technology Recess LOCOS(700A) Polycide ex-situ Poly POCl3 Diffusion15

2、00A+WSI 1750A 12/ Ti-silicide Process Metal1(4500Al/100Ti/300TiN), Metal2/3(6200Al/100Ti/300TiN), Metal4(9000Al/100Ti/300TiN), TTOPME(30000Al/100Ti/300TiN) MIP module(0.78fF/um2), HTO 400A RPOLY (500 ohm/square exsitu-Poly) module, 1K, 2K, 5K developed Passivation: CZ6H: 1200TEOS+10K SION +Polyimide

3、 CZ6H OTP: 1200TEOS+10K UVSION Page17 1.WAFER START 2.OXIDE WET ETCH (LAL800; 3MIN; S/D) - remove native OX 3.AA_OX TOX (900C; 210A) - PAD OX to buffer Nitride stress 4.AA NITRIDE DEP (760C; 1500A 4000 LOCOS)- Suppress OX lateral diffuse LOCOS grown 5.AA PHOTO 6.AA SIN ETCH 7.PR ASH (250C) 8.PR STRI

4、P (SPM+CAPM; NORMAL) 9.FIELD OXIDATION (1100C; 4000A) 10.OXIDE WET ETCH (DHF; 200A) 11.SIN WET ETCH (65MIN) 12.OXIDE WET ETCH (LL130; 2MIN) 13.SAC0_OX (900C; 210A)-protect Si surface from PR contamination and serve as screen OX when N/P well IMP P SUB P SUB LOCOS Page17 P SUB 5.PW_PH 6.PW_IMP P WELL

5、 IMPLANT 1 B300K100E3A63B32R00(Well Form) PWELL IMPLANT 2 B120K350E2T07W23R00(Channel Stop) PWELL IMPLANT 3 B070K150E2T07W23R00(APT IMP) P WELL IMPLANT 4 B030K175E2T07W23R00(VT adjust) 7.PR ASH 8. PR STRIP (SPM+CAPM; NORMAL) 1. NW_PH 2. NW_IMP NWELL IMP 1 P700K150E3A63B32R00 (Well Form) NWELL IMP 2

6、P260K120E2T07W23R00 (Channel Stop) NWELL IMP3 P150K150E2T07W23R00 (APT IMP) NWELL IMP4 B015K185E2T07W23R00 (VT adjust) 3. PR ASH 4.PR STRIP (SPM+CAPM; NORMAL) P SUB N WELLP WELLP WELL Page17 1.OXIDE WET ETCH (LL130; 90SEC) 2.GATE OXIDATION (850C; 155A) 8.CAP TOP WSI DEP(SPUTTER:2000A) 3.GATE POLY DE

7、P (620C; 1500A; O2 LEAK) 9.CAP TOP OXIDE DEP (APOX; 1200A 4.PHOSPHORUS DIFFUSION 10. CAP PHOTO 5.PSG REMOVE (LL130 4MIN+H2O2 4MIN) 11.CAP_ET 6.GATE WSI DEP (SPUTTER:1750A) 12.CAP PR ASH 7.HTO DEP (400A) 13. PR STRIP (SPM+HAPM; SILICIDE) P SUBP SUB N WELLP WELLP WELL MCAP Page17 14.P1 PHOTO 15. POLY

8、ETCH 16.NLDD IMPLANT P SUBP SUB N WELLP WELLP WELL NMOS Page17 P SUBP SUB N WELLP WELLP WELL 1.PLDD PHOTO 2.PLDD IMPLANT 3. PR STRIP 4.SPACER DEP (NSG; 2000A) 5.ANNEAL (950C;30M) 6.SPACER ETCH 7. SAC3 OXIDE DEP Page17 P SUBP SUB N WELLP WELLP WELL 1. NP_PH 3. NP_IMP N+ IMPLANT 1 P100K280E3T45W23R12

9、N+ IMPLANT 2 P040K120E4T00W23R00 N+ IMPLANT 3 A070K200E5A00B00 4. PR STRIP (SPM; SILICIDE) 5. PP_PH 6. PP_IMP P+ IMPLANT 1 B030K200E3T00W23R00 P+ IMPLANT 2 F050K500E5A00B00 7. PR STRIP (SPM; SILICIDE) 8. ANNEAL (850C; 50M) Page17 CODE_PH 6.SALICIDE SPUTTER (TI 330A) CODE IMPLANT P360K300E3A00B00R00

10、7. RTA (700C; 30S) PR STRIP (SPM; SILICIDE) 8. BRANSON TREATMENT (CAPM) PRE AMORPHOUS IMPLANT 9. RTA (840C; 10S) OXIDE WET ETCH (LAL30; 3MIN10SEC; SILICIDE) 10. BRANSON TREATMENT (CAPM) P SUBP SUB N WELLP WELLP WELL OTP cell Page17 ILD OXIDE1 DEP (APOX; 1500A) 7. ILD BPSG DEP (B9.8; P5.4; 13700A) PO

11、LY2 DEP 8. PRE-BPSG FLOW (HAPM; SILICIDE) POLY2 IMP 9. BPSG FLOW (800C; 30S) POLY2 PHOTO 10. SIN WET ETCH (15MIN) P2 ETCH 11. SLN244 PRE CMP O2 TREATMENT 6. ILD DEP (SIN 200A) 12. ILD CMP P SUBP SUB N WELLP WELLP WELL RPOLY Page17 1. CT PHOTO 6. CTNP_PH 2. CT PHOTO UV CURE 7. CTNP_IMP P070K200E5A00B

12、00 3. CT ETCH 8. CT NPLUS PR ASH (140C) 4. PR STRIP (SPM+CAPM; SILICIDE) 9. PR STRIP (SPM+CAPM; SILICIDE) 5. CTPP_IMP F070K500E4A00B00 10. RTA (800C; 10S) P SUBP SUB N WELLP WELLP WELL CT Page17 P SUBP SUB N WELLP WELLP WELL CT GULE SPUTTER (TI 300A; TIN 500A) 5.M1 DEP (AL 4500A ;TIN 600A) CT GLUE A

13、NNEAL (690C; 30S) 6. M1 PHOTO CT W CVD DEP (475C; 5000A) 7. M1 ETCH CT W ETCH BACK 8. SOLVENT STRIP (SST-A2; 10MIN) Page17 P SUBP SUB N WELLP WELLP WELL IMD1 DEP1 (PETEOS; 1200A) IMD1 USG DEP (O3TEOS; 4000A) IMD1 DEP2 (PETEOS; 17000A) IMD1 CMP ALLOY (400C; 10M; H2-N2) M1 Page17 P SUBP SUB N WELLP WE

14、LLP WELL VIA1 PHOTO 7. VIA1 W CVD DEP (5000A) VIA1 ETCH 8. CT W ETCH BACK VIA1 PR ASHING (140C) 9. M2 DEP (TIN 600A; AL 6200A) SOLVENT STRIP (N311; 10MIN) 10. M2 PHOTO VIA1 GLUE LAYER SPUTTER (TI 300A; TIN 1000A) 11. M2 ETCH RTA (700C; 30S) 12. SOLVENT STRIP (SST-A2; 10MIN) M2 Page17 IMD2 DEP1 (PETE

15、OS; 1200A)VIA1 ETCH 10. VIA2 GLUE LAYER SPUTTER (RF300;TI 300A; TIN 1000A) IMD2 USG DEP (O3TEOS; 4000A) 11. VIA2 W CVD DEP (5000A) IMD2 DEP2 (PETEOS; 17000A) 12. VIA2 W ETCH BACK IMD2 CMP 13. TM SPUTTER (TIN 600A; 6200A) ALLOY (400C; 10M; N2) 14.TM PHOTO VIA2 PHOTO 15. TM ETCH VIA2 ETCH VIA2 PR ASHING (140C) SOLVENT STRIP (N311;