溅镀法制备薄膜操作条件之探讨

1、濺鍍法製備薄膜操作條件之探討主講人：洪錕銘國立高雄應用科技大學化學工程系中華民國九十三年4月26日星期一1.summary of sputtering conditions employed for the preparation of pbtio 3 thin films:targetpbtio 3powder with 5wt. excess pbogas pressure（1.22.4）10-2 torrgas compositionar/o 2（100/050/50）r.f. power density24wcm -2substrate temperature300 650substr

2、ate-to-target distance70mmtarget diameter50mm一、 sangsub kim,sunggi baik, ”deposition and characterization of pbtio3 thin films grown by radio frequency sputtering on mgo （100）”,thin solid films 266 （ 1995） 205-211（1 ）gas pressure deposition rate i（ 001 ）2i（001 ）2i（ 100 ）1.4 - 2.2nm/min（2） oxygen con

3、tent deposition rate （3） r.f . power density x -ray intensity of（ 001 ）（ 100 ） 1（ 4） xrd spectra:t 400 -amorphoust 600 and650 -ighly c-axis oriented二、 sangsubkim,youngminkang,sunggibaik, ” growthof pbtio3 thin films byr.f. sputtering on vicinal mgo（100 ）substrates” ,thinsolid films 256（ 1995 ）240-24

4、62.summary of sputtering conditions employedfor the preparation of pbtio3 thintargetpbtio3 powder with 5wt. excess pbogas pressure1.2 10 -2torrgas compositionpure arr.f. power density2 wcm-2substrate temperature600 substrate-to-target distance70mm2. the best quality films were obtained under the fol

5、lowing conditions:gas pressure1.2 10 -2 torrgas compositionar/o2 90/10r.f. power density2wcm-2substrate temperature6001.mgo wafers were miscutfrom an mgosingle-crystal of 5.5to the（100 ） planeasfig.1.:3. fig.2. shows highly preferred c axis orientedwith their a axes near the mgo（ 100 ）axis:24.the wi

6、dths of rocking curves show that the crystalline quality of the pbtio3 thin film on the vicinal substrate is superior to that on the exact substrate.三、 shoichimochizuki,toshiyukinmihara,shigeharutamura,tadashiishida,” crystalstructure anddeposition rate of pbtio3 filmsprepared on glass and platinums

7、ubstrate by rf sputtering ” ,applied surface science 169-170 （2001 ）557-5591. deposition conditions of the pbtio3 film:targetpb ： ti 1 ： 1gas pressure0.7-7pa （ 0.5510 -2 torr）g a s c o m p o s i t i o na r ： o 2 1 ： 1r.f. powermaximum 300wsubstrate temperaturemaximum 610f i l m t h i c k n e s s0. 5

8、 - 3 m2. the effect of substrate:platinum-coated glass substrate -perovskitephase pbtio3 was obtainedglass substrate-amorphous（ after this film was annealed at500 in air,crystalstructure wasconverted to perovskiteone. ）3. deposition rates10nm/min:it was very difficult to utilize them fordevices whos

9、e thickness were 1 m.the relationship of substrate temperatureand deposition rate:substratecrystaldepositiontemperature tructurerate （nm/min）550pyrocholore12580perovskite5.5610perovskite6.13pbtio四、 toshiyuki mihara,shoichimochizuki,ryoji makabe, ” c-axis-oriented pbtio3 thin films prepared bysputter

10、-assisted plasma cvd” ,thinsolid films 281-282（ 1996 ）457-459ar mixed with o 2 was used to increase the sputtering yield.1. the sputter-assisted plasma cvd system:h 2 was used as the carrier gasto transport ticl4vapor.3 thin films of 400 nmthickness were prepared onmgo （100 ） and pt（100 ）/ mgo（ 100

11、） .2.deposition conditions:pb target99.99 ,100mm target-substrate distance60mmrf power200wtemperature of ticl 4 vaporizer0-15gas flow rateo 2 25cm3min-1h 230cm3min-1ar15cm3min-1reaction pressure5 pasubstrate temperature600deposition rate0.4mh -13. results and discussion:（ 1） perovskite-phase films w

12、ere obtained with acomposition range（pb/ti 0.4-1.2）under pb-rich conditions,thefilms were notorientd.stoichiometricor low pb-highly（ 001）oriented or both （001） and （100） oriented.（ 2） the tilt angles-mgo（100） slightly thanpt （100） / mgo （ 100）this is probably caused by a smaller latticemismatching w

13、ith pt, compared with mgo.4五、 f.frost,d.hirsch,a.schindler,”evaluation ofafm tips using nanometer-sized structuresinduced by ion sputtering” ,appliedsurfacescience 179（2001 ）8-12a process for the fabrication of nanometer-sized surface structures using low-energy ar+ sputtering of inp surfacesthey can be tuned by the sputter process（ sputter time,ion energy,ion incidence angle and ion current density or ion flux, respectively ）六、結論：1. 基板溫度在大約 600以上，可以獲得最佳的濺鍍成果。2. 氬氣混合氧氣可以增進濺鍍之產率，但氧氣的比例太高，不利於 c-軸晶膜之成長，也會降低沉積速率（deposition rate ）。六、結論 -3.氣體壓力（ gas pressure）在較低的狀況下（ 1.2 10-2torr ），有較佳的濺鍍成果。